2SD1980_09 [ROHM]
Power Transistor (100V, 2A); 功率晶体管（ 100V ， 2A ）
| 型号： | 2SD1980_09 |
| 厂家： | 
ROHM |
| 描述： | Power Transistor (100V, 2A) |
| 文件： | 总3页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistor (100V, 2A)
2SD1980 / 2SD1867
zFeatures
zDimensions (Unit : mm)
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
2SD1980
6.5
5.1
2.3
0.5
4) Complements the 2SB1316.
zinner circuit
C
0.75
0.65
2.3
B
0.9
(1)
2.3
(3)
(2)
0.5
1.0
R1
R2
(1) Base
E
(2) Collector
(3) Emitter
R
1
2
3.5kΩ
300Ω
B
C
E
: Base
: Collector
: Emitter
ROHM : CPT3
EIAJ : SC-63
R
2SD1867
2.5
zAbsolute maximum ratings (Ta=25°C)
6.8
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
Limits
100
100
6
Unit
V
V
V
2
A(DC)
A(Pulse)
W
IC
Collector current
∗1
∗2
3
1
0.65Max.
Collector
2SD1980
10
1
power
PC
W(Tc=25°C)
dissipation
2SD1867
W
°C
°C
0.5
Junction temperature
Storage temperature
Tj
150
( )
2
( )
3
( )
1
Tstg
−55 to +150
∗
1
Single pulse Pw
Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger.
=100ms
∗2
2.54
2.54
1.05
0.45
Taping specifications
zPackaging specifications and hFE
(1) Emitter
(2) Collector
(3) Base
Type
2SD1980
CPT3
1k to 10k
−
2SD1867
ROHM : ATV
Package
ATV
1k to 10k
−
hFE
Marking
Code
TL
TV2
Basic ordering unit (pieces)
2500
2500
∗
Denotes hFE
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
BVCBO
BVCBO
BVEBO
Min.
100
100
6
Typ.
−
−
−
−
−
−
−
−
Max.
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
−
I
I
I
C
C
E
=50µA
=5mA
=5mA
V
V
I
CBO
−
−
−
−
10
µA
mA
V
V
V
CB =100V
EB =5V
Emitter cutoff current
I
EBO
3
Collector-emitter saturation voltag
Base-Emitter saturation voltage
DC current transfer ratio
Transition frequency
V
CE(sat)
1.5
2.0
10000
−
I
I
C
=1A,I
B
=1mA
/I =1A/1mA
∗
∗
VBE(sat)
V
C
B
hFE
1000
−
MHz
V
V
V
CE =2V,I
CE =5V,I
C
E
=1A
f
T
−
−
80
=−0.1A,f=30MHz
=0A,f=1MHz
Output capacitance
Measured using pulse current.
Cob
25
−
pF
CB =10V,I
E
∗
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2009.12 - Rev.C
1/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
2SD1980 / 2SD1867
Data Sheet
zElectrical characteristic curves
10
5
10000
5000
2.0
V
CE=2V
Ta=25°C
Ta=25°C
V
CE=4V
1.6
1.2
0.8
0.4
0
2
2V
2000
1000
1
C
0.5
°
500
C
C
°
°
25
25
0.2
0.1
Ta=100
−
200
100
50
0.05
0.02
20
10
0.01
0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0
BASE TO EMITTER VOLTAGE : VBE (V)
0.001
0.01
0.1
1
10
0
1
2
3
4
5
COLLECTOR CURRENT : IC (A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter propagation
characteristics
Fig.3 DC current gain vs. collector current
Fig.1 Grounded emitter output
characteristics
100
100
10000
5000
V
CE=2V
Ta=25°C
IC/IB=1000
50
50
2000
1000
500
20
10
20
10
C
°
C
5
5
°
25
I
C/I
B=1000
Ta=100
Ta=−25°C
C
200
100
50
2
1
2
1
°
25
25°C
−
500
100°C
0.5
0.2
0.5
20
0.2
0.1
100.001
0.1
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
0.0.1 0.0.2 0.0.5 0.1 0.2
0.5
1
2
5
10
0.0.1 0.0.2 0.0.5 0.1 0.2
0.5
1
2
5
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current
Fig.5 Collector-emitter saturation voltage
vs.collector current
Fig.6 Collector-emitter saturation voltage
vs.collector current
1000
3
Ta=25°C
I
C
Max Pulse
Max
f=1MHz
2
1
500
IE=0A
I
C
200
100
0.5
50
0.2
0.1
20
10
5
0.05
Ta=25°C
2
1
∗ Single Nonrepetitive
Pulse
0.1 0.2
0.5
1
2
5
10 20
50 100
1
2
5
10
20
50
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
VCE (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Fig.8 Safe operating area(2SD1867)
www.rohm.com
2009.12 - Rev.C
2/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
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R0039
A
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