2SCR544RTL [ROHM]
Small Signal Bipolar Transistor, 2.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, TSMT3, 3 PIN;![2SCR544RTL](http://pdffile.icpdf.com/pdf2/p00317/img/icpdf/2SCR544RTL_1902051_icpdf.jpg)
型号: | 2SCR544RTL |
厂家: | ![]() |
描述: | Small Signal Bipolar Transistor, 2.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, TSMT3, 3 PIN 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:1557K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2SCR544R
NPN 2.5A 80V Middle Power Transistor
Datasheet
lOutline
Parameter
Value
TSMT3
ꢀ
V
CEO
80V
I
C
2.5A
ꢀ
SOT-346T
SC-96
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ꢀ
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llFeatures
1)Suitable for Middle Power Driver
llInner circuit
2)Complementary PNP Types:2SAR544R
3)Low V
CE(sat)
ꢀV =300mV(Max.)
CE(sat)
ꢀ(I /I =1A/50mA)
C B
llApplication
LOW FREQUENCYAMPLIFIER, HIGH SPEED SWITCHING
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llPackaging specifications
Basic
Package
size
Taping Reel size Tape width
Part No.
Package
ordering
Marking
NS
code
(mm)
(mm)
unit.(pcs)
2SCR544R
TSMT3
2928
TL
180
8
3000
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
1/6
20150730 - Rev.002
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2SCR544R
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Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Values
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
80
80
V
6
V
2.5
A
Collector current
Power dissipation
*1
ICP
5
0.5
A
*2
PD
W
W
℃
℃
*3
PD
1.0
Tj
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
I = 100μA
Unit
Min.
80
Typ.
Max.
-
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
BVCBO
BVCEO
-
V
V
C
I = 1mA
C
80
-
-
BVEBO
ICBO
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
I = 100μA
6
-
-
V
μA
μA
mV
-
E
V
CB
= 80V
-
-
1.0
1.0
300
390
IEBO
V = 4V
EB
-
-
-
100
-
Collector-emitter saturation voltage
DC current gain
V
I = 1A, I = 50mA
CE(sat)
C
B
hFE
V
CE
= 3V, I = 100mA
120
C
V
= 10V, I = -500mA,
E
CE
f
Transition frequency
Output capacitance
Turn-On time
-
-
-
-
-
280
16
-
-
-
-
-
MHz
pF
ns
T
f = 100MHz
V
CB
= 10V, I = 0mA,
E
Cob
ton
tstg
tf
f = 1MHz
I = 1.3A,
C
50
I = 130mA,
B1
I = -130mA,
B2
Storage time
700
40
ns
V
CC
⋍ 10V,
R = 7.5Ω
See test circuit
L
Fall time
ns
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*1 P =10ms, Single Pulse
W
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board( 40×40×0.7mm).
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ꢀ
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
2/6
20150730 - Rev.002
ꢀ ꢀ ꢀ
2SCR544R
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.1 Ground Emitter Propagation
Fig.2 Typical Output Characteristics
ꢀꢀꢀꢀCharacteristics
Fig.3 DC Current Gain vs. Collector
Fig.4 DC Current Gain vs. Collector
ꢀꢀꢀꢀCurrent (I)
ꢀꢀꢀꢀCurrent (II)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
3/6
20150730 - Rev.002
ꢀ ꢀ ꢀ
2SCR544R
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.5 Collector-Emitter Saturation
Fig.6 Collector-Emitter Saturation
ꢀꢀꢀꢀVoltage vs. Collector Current (I)
ꢀꢀꢀꢀVoltage vs. Collector Current (II)
Fig.7 Base-Emitter Saturation Voltage
Fig.8 Gain Bandwidth Product vs.
ꢀꢀꢀꢀvs. Collector Current
ꢀꢀꢀꢀEmitter Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
4/6
20150730 - Rev.002
ꢀ ꢀ ꢀ
2SCR544R
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.9 Emitter Input Capacitance vs.
ꢀꢀꢀꢀEmitter-Base Voltage
Fig.10 Safe Operating Area
ꢀꢀꢀ Collector Output Capacitance vs.
ꢀꢀꢀ Collector-Base Voltage
SWITCHING TIME TEST CIRCUIT
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
5/6
20150730 - Rev.002
2SCR544R
ꢀ ꢀ ꢀ
Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/6
20150730 - Rev.002
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