2SCR552P_09 [ROHM]
Midium Power Transistors (30V / 3A); 煤层炮功率晶体管( 30V / 3A )型号: | 2SCR552P_09 |
厂家: | ROHM |
描述: | Midium Power Transistors (30V / 3A) |
文件: | 总5页 (文件大小:236K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Midium Power Transistors (30V / 3A)
2SCR552P
Structure
Dimensions (Unit : mm)
NPN Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
VCE (sat) = 0.4V (Max.) (IC / IB= 1A / 50mA)
(1)
(2) (3)
2) High speed switching
Applications
Abbreviated symbol : NF
Driver
Packaging specifications
Inner circuit (Unit : mm)
Package
Taping
T100
(2)
Type
Code
Basic ordering unit (pieces) 1000
2SCR552P
(1)
Absolute maximum ratings (Ta = 25C)
(1) Base
(2) Collector
(3) Emitter
(3)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
IC
30
30
V
6
V
DC
3
A
Collector current
*1
Pulsed
ICP
PD
PD
Tj
6
0.5
A
*2
*3
W
W
C
C
Power dissipation
2
Junction temperature
150
Range of storage temperature
Tstg
-55 to 150
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
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2009.12 - Rev.A
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○ 2009 ROHM Co., Ltd. All rights reserved.
2SCR552P
Data Sheet
Electrical characteristic (Ta = 25C)
Parameter
Symbol Min.
Typ.
Max.
Unit
V
Conditions
IC= 1mA
BVCEO
BVCBO
BVEBO
ICBO
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
30
30
6
-
-
-
IC= 100μA
IE= 100μA
VCB= 30V
-
V
-
-
V
-
-
1
A
A
mV
-
IEBO
VEB= 4V
Emitter cut-off current
-
-
200
-
1
*
1
VCE(sat)
IC= 1A, IB= 50mA
Collector-emitter staturation voltage
DC current gain
-
400
500
hFE
*
VCE= 2V, IC= 500mA
200
1
VCE= 10V
fT
Transition frequency
-
-
280
15
-
-
MHz
pF
IE=-100mA, f=100MHz
VCB= 10V, IE=0A
Cob
Collector output capacitance
f=1MHz
ton
tstg
tf
Turn-on time
Storage time
Fall time
-
-
-
25
300
20
-
-
-
ns
ns
ns
2
*
2
*
2
*
IC= 1.5A,IB1= 150mA,
_
IB2=-150mA,VCC 10V
~
*1 Pulsed
*2 See switching time test circuit
www.rohm.com
2009.12 - Rev.A
2/4
c
○ 2009 ROHM Co., Ltd. All rights reserved.
2SCR552P
Data Sheet
Electrical characteristic curves
5mA 3.0mA
1000
100
10
1000
100
10
0.50
2.5mA
Ta=25°C
V
CE = 2V
0.45
2.0mA
0.40
0.35
1.5mA
V
CE = 5V
0.30
2V
Ta=125°C
0.25
75°C
25°C
-40°C
1.0mA
0.20
0.15
0.10
0.05
0.00
0.5mA
Ta=25°C
1
10
100
1000
[mA]
10000
1
10
100
1000
[mA]
10000
0
0.5
1
1.5
2
COLLECTOR CURRENT : I
C
COLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.1 Typical Output Characteristics
COLLECTOR CURRENT : I
C
Fig3. DC Current Gain vs.
Fig.2 DC Current Gain vs.
Collector Current ( ΙΙ )
Collector Current ( Ι )
1
0.1
1
0.1
10000
1000
100
10
IC/IB=20
Ta=25°C
VCE = 2V
Ta=125°C
75°C
25°C
-40°C
Ta=125°C
75°C
IC
/IB
=50
20
10
0.01
0.001
0.01
0.001
25°C
-40°C
1
1
10
100
1000
[mA]
10000
1
10
100
1000
[mA]
10000
0
0.5
1
1.5
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
BASE TO EMITTER VOLTAGE :VBE[V]
Fig.5 Collector-Emitter Saturation Voltage
Fig.4 Collector-Emitter Saturation Voltage
Fig.6 Ground Emitter Propagation
Characteristics
vs. Collector Current ( ΙΙ )
vs. Collector Current ( Ι )
Single pulse
1000
100
10
1000
100
10
10
1
Ta=25°C
Ta=25°C
f=1MHz
V
CE=10V
IE=0A
1ms
Cib
IC
=0A
10ms
100ms
DC Ta=25°C
0.1
0.01
Cob
(Mounted on a
recommended land)
DC Ta=25°C
(Mounted on a ceramic board)
1
10
100
EMITTER CURRENT : IE[mA]
1000
0.1
1
10
100
0.1
1
10
100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.9 Safe Operating Area
Fig.8 Gain Bandwidth Product vs.
Emitter Current
Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
www.rohm.com
2009.12 - Rev.A
3/4
c
○ 2009 ROHM Co., Ltd. All rights reserved.
2SCR552P
Data Sheet
Switching time test circuit
RL=6.7Ω
IB1
VIN
IC
_
VCC 10V
~
IB2
~_
Pw 50μs
Pw
DUTY CYCLE1%
IB1
BASE CURENT WAVEFORM
IB2
ton
tstg
tf
90%
IC
COLLECTOR CURRENT
WAVEFORM
10%
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2009.12 - Rev.A
4/4
c
○ 2009 ROHM Co., Ltd. All rights reserved.
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