2SCR543D [ROHM]
Midium Power Transistors (50V / 4A); 煤层炮功率晶体管（ 50V / 4A ）
| 型号： | 2SCR543D |
| 厂家： | 
ROHM |
| 描述： | Midium Power Transistors (50V / 4A) |
| 文件： | 总6页 (文件大小：492K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Midium Power Transistors (50V / 4A)
2SCR543D
Structure
Dimensions (Unit : mm)
NPN Silicon epitaxial planar transistor
CPT3
6.5
5.1
(SC-63)
2.3
0.5
<SOT-428>
Features
1) Low saturation voltage
V
CE (sat) = 0.35V (Max.) (IC / IB= 2A / 100mA)
2) High speed switching
0.75
0.65
2.3
0.9
(1)
2.3
(1) Base
(2) Collector
(3) Emitter
(2)
(3)
0.5
1.0
Applications
Driver
Packaging specifications
Inner circuit (Unit : mm)
Package
CPT3
TL
(2)
Type
Code
Basic ordering unit (pieces) 2500
(1)
Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
V
(1) Base
(2) Collector
(3) Emitter
VCBO
VCEO
VEBO
IC
50
(3)
50
V
6
V
DC
4
A
Collector current
*1
Pulsed
ICP
PD
PD
Tj
8
A
*2
*3
1
10
W
W
°C
°C
Power dissipation
Junction temperature
150
Range of storage temperature
Tstg
-55 to 150
*1 Pw=10ms, Single Pulse
*2 Mounted on a substrate
*3 TC=25°C
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©2010 ROHM Co., Ltd. All rights reserved.
2010.12 - Rev.A
1/5
2SCR543D
Data Sheet
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Unit
V
Conditions
IC= 1mA
BVCEO
BVCBO
BVEBO
ICBO
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
50
50
6
-
-
-
IC= 100μA
IE= 100μA
-
V
-
-
V
VCB= 50V
-
-
1
μA
μA
mV
-
IEBO
VEB= 4V
Emitter cut-off current
-
-
130
-
1
*1
VCE(sat)
hFE
IC= 2A, IB= 100mA
VCE= 3V, IC= 100mA
VCE= 10V
Collector-emitter staturation voltage
DC current gain
-
350
450
180
*1
fT
Transition frequency
-
-
300
20
-
-
MHz
pF
IE=-500mA, f=100MHz
VCB= 10V, IE=0A
Cob
Collector output capacitance
f=1MHz
ton
Turn-on time
Storage time
Fall time
-
-
-
50
450
85
-
-
-
ns
ns
ns
*2
IC= 2A, IB1= 200mA,
tstg
*2
_
IB2=-200mA, VCC 10V
~
tf
*2
*1 Pulsed
*2 See switching time test circuit
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©2010 ROHM Co., Ltd. All rights reserved.
2010.12 - Rev.A
2/5
Data Sheet
2SCR543D
ꢀ
Electrical characteristic curves (Ta=25C)
Fig.1 Typical OutputCharacteristics
Fig.2 DC Current Gain vs. Collector Current ( I )
4mA
5mA
1.0
0.8
0.6
0.4
0.2
0.0
1000
100
10
Ta=25C
3mA
2.5mA
VCE=5V
3V
2.0mA
1.5mA
1.0mA
IB=0.5mA
Ta=25C
1
10
100
1000
10000
0
0.5
1
1.5
2
COLLECTOR CURRENT : IC[mA]
COLECTOR TO EMITTER VOLTAGE :VCE[V]
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I )
Fig3. DC Current Gain vs. Collector Current ( II )
1000
100
10
1
Ta=25C
VCE=3V
0.1
Ta=125°C
75°C
25°C
-40°C
IC/IB=50
20
0.01
10
0.001
1
10
100
1000
10000
1
10
100
1000
10000
COLLECTOR CURRENT : IC[mA]
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II )
1
Fig.6 Ground Emitter Propagation Characteristics
10000
1000
100
10
VCE=3V
0.1
Ta=125°C
75°C
25°C
-40°C
Ta=125°C
75°C
25°C
0.01
-40°C
IC/IB=20
0.001
1
1
10
100
1000
10000
0
0.5
1
1.5
COLLECTOR CURRENT : IC[mA]
BASE TO EMITTER VOLTAGE : VBE[V]
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©2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.12 - Rev.A
Data Sheet
2SCR543D
ꢀ
Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance vs. Collector-Base Voltage
Fig.8 Gain Bandwidth Product vs. Emitter Current
1000
100
10
1000
100
10
Ta=25C
Ta=25C
VCE=10V
f=1MHz
IE=0A
IC=0A
Cib
Cob
1
0.1
1
10
100
10
100
1000
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
EMITTER CURRENT : IE[mA]
Fig.9 Safe Operating Area
10
1ms
10ms
1
DC
Tc=25C
0.1
DC Ta=25C
(Mounted on a substrate)
Tc=25°C
Single non repetitive pulse
0.01
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.12 - Rev.A
2SCR543D
Data Sheet
Switching time test circuit
RL=4.7Ω
IN
V
IB1
C
I
_
VCC 10V
~
IB2
_
Pw 50μs
~
Pw
DUTY CYCLE≦1%
IB1
BASE CURENT WAVEFORM
IB2
ton
tstg
tf
90%
IC
COLLECTOR CURRENT WAVEFORM
10%
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©2010 ROHM Co., Ltd. All rights reserved.
2010.12 - Rev.A
5/5
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