2SCR293P [ROHM]
Midium Power Transistors (30V / 1A); 煤层炮功率晶体管( 30V / 1A )型号: | 2SCR293P |
厂家: | ROHM |
描述: | Midium Power Transistors (30V / 1A) |
文件: | 总6页 (文件大小:486K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Midium Power Transistors (30V / 1A)
2SCR293P
Structure
Dimensions (Unit : mm)
NPN Silicon epitaxial planar transistor
MPT3
(SC-63)
<SOT-428>
Features
Low saturation voltage
VCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA)
(1)
(2)
(3)
(1) Base
(2) Collector
(3) Emitter
Applications
Abbreviated symbol : NV
Driver
Packaging specifications
Inner circuit (Unit : mm)
Package
MPT3
T100
(2)
Type
Code
Basic ordering unit (pieces) 1000
(1)
Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
V
(1) Base
(2) Collector
(3) Emitter
VCBO
VCEO
VEBO
IC
30
(3)
30
V
6
V
DC
1
2
A
Collector current
*1
Pulsed
ICP
PD
PD
Tj
A
*2
*3
0.5
W
W
°C
°C
Power dissipation
2.0
Junction temperature
150
Range of storage temperature
Tstg
-55 to 150
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land
*3 Mounted on a 40×40×0.7 [mm] ceramic substrate
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©2010 ROHM Co., Ltd. All rights reserved.
2010.12 - Rev.A
1/5
2SCR293P
Data Sheet
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
-
Unit
V
Conditions
IC= 1mA
BVCEO
BVCBO
BVEBO
ICBO
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
30
30
6
-
IC= 10μA
IE= 10μA
VCB= 30V
VEB= 6V
-
-
V
-
-
V
-
-
100
100
350
680
nA
nA
mV
-
IEBO
Emitter cut-off current
-
-
120
-
*1
VCE(sat)
hFE
IC= 500mA, IB= 25mA
VCE= 2V, IC= 100mA
Collector-emitter staturation voltage
DC current gain
-
270
VCE= 2V
IE=-100mA, f=100MHz
*1
fT
Transition frequency
-
-
320
7
-
-
MHz
pF
VCB= 10V, IE=0A
Cob
Collector output capacitance
f=1MHz
ton
Turn-on time
Storage time
Fall time
-
-
-
90
300
60
-
-
-
ns
ns
ns
*2
IC= 500mA, IB1= 25mA,
tstg
*2
_
IB2= -25mA, VCC 5V
~
tf
*2
*1 Pulsed
*2 See switching time test circuit
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©2010 ROHM Co., Ltd. All rights reserved.
2010.12 - Rev.A
2/5
Data Sheet
2SCR293P
ꢀ
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics
Fig.2 DC Current Gain vs. Collector Current(Ⅰ)
4.0mA
5.0mA
3.0mA
2.0mA
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1000
100
10
Ta=25°C
1.5mA
1.0mA
VCE=5V
3V
IB=0.5mA
Ta=25°C
0.0
1.0
2.0
3.0
4.0
5.0
1
10
100
1000
COLECTOR TO EMITTER VOLTAGE:VCE[V]
COLLECTOR CURRENT :IC[mA]
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ)
Fig.3 DC Current Gain vs. Collector Current(Ⅱ)
1000
100
10
10
VCE=2V
Pulsed
Ta=25°C
VCE=2V
1
Ta=125°C
75°C
25°C
0.1
-40°C
IC/IB=50
20
0.01
10
0.001
1
10
100
1000
1
10
100
1000
COLLECTOR CURRENT :IC[mA]
COLLECTOR CURRENT :IC[mA]
Fig.6 Ground Emitter Propagation Characteristics
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅱ)
1
1000
100
10
VCE=2V
Pulsed
IC/IB=20
Pulsed
Ta=125°C
75°C
25°C
-40°C
0.1
Ta=125°C
75°C
25°C
-40°C
1
0.01
0
0.5
1
1.5
1
10
100
1000
COLLECTOR CURRENT :IC[mA]
BASE TO EMITTER VOLTAGE :VBE[V]
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©2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.12 - Rev.A
Data Sheet
2SCR293P
ꢀ
Fig.7 Emitter input capacitance vs. Emitter-Base Voltage
Fig8. Gain Bandwidth Product vs. Emitter Current
Collector output capacitance vs.Collector-Base Voltage
1000
100
10
100
10
1
Ta=25°C
f=1MHz
IC=0A
Ta=25°C
VCE=2V
Cib
f=100MHz
Cob
0.1
1
10
100
10
100
1000
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
EMITTER CURRENT :IE[mA]
Fig9. SAFE OPERATING AREA
-10
-1
1ms
10ms
100ms
DC
-0.1
(Mounted on a
recommended land)
DC
-0.01
-0.001
(Mounted on a ceramic board)
Ta=25°C
Single non repetitive pulse
-0.1
-1
-10
-100
COLLECTOR TO EMITTER VOLTAGE :VCE(V)
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.12 - Rev.A
2SCR293P
Data Sheet
Switching time test circuit
RL=10Ω
IN
V
IB1
C
I
_
VCC 5V
~
IB2
_
Pw 50μs
~
Pw
DUTY CYCLE≦1%
IB1
BASE CURENT WAVEFORM
IB2
ton
tstg
tf
90%
IC
COLLECTOR CURRENT WAVEFORM
10%
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©2010 ROHM Co., Ltd. All rights reserved.
2010.12 - Rev.A
5/5
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R1010
A
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