2SCR372P [ROHM]
Midium Power Transistors (120V / 700mA); 煤层炮功率晶体管( 120V / 700毫安)型号: | 2SCR372P |
厂家: | ROHM |
描述: | Midium Power Transistors (120V / 700mA) |
文件: | 总5页 (文件大小:1071K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
Midium Power Transistors (120V / 700mA)
2SCR372P
Structure
Dimensions(Unit : mm)
NPN Silicon epitaxial planar transistor
MPT3
Features
Low saturation voltage
V
CE (sat) = 0.3V (Max.) (IC / IB= 500mA / 50mA)
(1)
(2)
(3)
(1) Base
(2) Collector
(3) Emitter
Applications
Abbreviated symbol : GX
Driver
Packaging specifications
Inner circuit(Unit : mm)
Package
Taping
T100
1000
(2)
Type
Code
Basic ordering unit (pieces)
2SCR372P
(1)
hFE values are classified follows :
Item
hFE
Q
R
(1) Base
(2) Collector
(3) Emitter
(3)
120 to 270 180 to 390
Absolute maximum ratings(Ta = 25C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Limits
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
120
120
V
6
V
DC
Collector current
Pulsed
0.7
A
*1
ICP
1.4
A
*2
PD
0.5
W
W
C
C
Power dissipation
*3
PD
2
Junction temperature
Tj
150
Range of storage temperature
Tstg
55 to 150
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm)
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.04 - Rev.A
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Data Sheet
2SCR372P
Electrical characteristics (Ta = 25C)
Parameter
Symbol
BVCEO
BVCBO
BVEBO
ICBO
Min.
120
120
6
Typ.
Max.
Unit
V
Conditions
IC= 1mA
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
-
-
-
IC= 100μA
IE= 100μA
VCB= 100V
VEB= 4V
-
V
-
-
V
-
-
1
A
A
mV
-
IEBO
Emitter cut-off current
-
-
100
-
1
VCE(sat)
hFE
IC= -500mA, IB= 50mA
VCE= 5V, IC= 100mA
Collector-emitter staturation voltage
DC current gain
-
300
390
120
VCE= 5V
IE=-300mA, f=100MHz
fT
Transition frequency
-
-
220
8
-
-
MHz
pF
VCB= 10V, IE=0A
Cob
Collector output capacitance
f=1MHz
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.04 - Rev.A
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Data Sheet
2SCR372P
ꢀ
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics
1.2mA
Fig.1 Ground Emitter Propagation Characteristics
1.6mA
2mA
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
1000
0.8mA
VCE=5V
Pulsed
0.6mA
0.4mA
Ta=125°C
75°C
25°C
-40°C
100
10
1
IB=0.2mA
Ta=25°C
0.0
1.0
COLECTOR TO EMITTER VOLTAGE:VCE[V]
2.0
0
0.5
1
1.5
BASE TO EMITTER VOLTAGE :VBE[V]
Fig.3 DC Current Gain vs. Collector Current(Ⅰ)
Fig.4 DC Current Gain vs. Collector Current(Ⅱ)
1000
100
10
1000
100
10
VCE=5V
Pulsed
Ta=25°C
Pulsed
Ta=125°C
75°C
VCE=5V
3V
25°C
-40°C
1
10
100
1000
1
10
100
1000
COLLECTOR CURRENT :IC[mA]
COLLECTOR CURRENT :IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ)
Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅱ)
1
1
IC/IB=10
Pulsed
Ta=25°C
Pulsed
0.1
0.1
Ta=125°C
75°C
IC/IB=20
10
25°C
-40°C
0.01
0.01
1
10
100
1000
1
10
100
1000
COLLECTOR CURRENT :IC[mA]
COLLECTOR CURRENT :IC[mA]
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.04 - Rev.A
Data Sheet
2SCR372P
ꢀ
Fig.7 Emitter input capacitance vs. Emitter-Base Voltage
Fig8. Gain Bandwidth Product vs. Emitter Current
Collector output capacitance vs.Collector-Base Voltage
1000
100
10
1000
100
10
Ta=25°C
f=1MHz
IC=0A
Cib
Cob
Ta=25°C
VCE=5V
f=100MHz
1
0.1
1
10
100
10
100
1000
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
EMITTER CURRENT :IE[mA]
Fig9. Safe Operating Area
-10
-1
Ta=25°C
Single non repetitive pulse
1ms
10ms
100ms
-0.1
DC
(Mounted on a ceramic board)
-0.01
-0.001
DC
(Mounted on a recommended land)
-0.1
-1
-10
-100
-1000
COLLECTOR TO EMITTER VOLTAGE :VCE(V)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.04 - Rev.A
Notice
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