2SA2029T2LR [ROHM]
Excellent hFE linearity, Complements the 2SC2412K / 2SC4081 /2SC4617 / 2SC5658; 优秀的hFE线性度，补充了2SC2412K / 2SC4081 / 2SC4617 / 2SC5658
| 型号： | 2SA2029T2LR |
| 厂家： | 
ROHM |
| 描述： | Excellent hFE linearity, Complements the 2SC2412K / 2SC4081 /2SC4617 / 2SC5658 |
| 文件： | 总4页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SA1576A
General Purpose Transistor (−50V, −0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029
Features
Dimensions (Unit : mm)
1) Excellent hFE linearity.
2) Complements the 2SC2412K / 2SC4081 /
2SC4617 / 2SC5658.
2SA1037AK
2SA1576A
1.25
2.1
Structure
Epitaxial planar type.
PNP silicon transistor
1.6
2.8
0.1 to 0.4
0.3 to 0.6
Each lead has same dimensions
Each lead has same dimensions
(1) Emitter
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
(2) Base
(3) Collector
Abbreviated symbol : F ∗
Abbreviated symbol : F ∗
2SA1774
2SA2029
1.2
( )
1
0.2 0.8 0.2
( )
2
( )
3
(
)
2
(3)
0.8
1.6
(
)
1
0.15Max.
0.1Min.
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collecto
ROHM : VMT3
EIAJ :
ROHM : EMT3
EIAJ : SC-75A
Abbreviated symbol : F ∗
Abbreviated symbol : F ∗
∗ Denotes hFE
www.rohm.com
2012.01 - Rev.C
1/3
c
○ 2012 ROHM Co., Ltd. All rights reserved.
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029
Data Sheet
Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Symbol
Limits
−60
Unit
VCBO
VCEO
VEBO
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
−50
−6
V
I
C
−0.15
0.2
A (DC)
2SA1037AK, 2SA1576A
Collector power
dissipation
PC
W
2SA2029, 2SA1774
0.15
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
−
55 to +150
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
−60
−50
−6
−
−
−
I
I
I
C
=
=
−50μA
−1mA
−50μA
−
V
C
−
−
V
E
=
I
CBO
EBO
CE(sat)
FE
−
−0.1
−0.1
−0.5
390
−
μA
μA
V
V
CB
EB
=
−60V
−6V
Emitter cutoff current
I
−
−
V
=
Collector-emitter saturation voltage
DC current transfer ratio
V
−
−
I
C/I
B
=
−50mA/−5mA
−6V, I −1mA
2mA, f
0A, f 1MHz
h
120
−
−
−
V
V
V
CE
CE
CB
=
=
=
C=
Transition frequency
f
T
140
4.0
MHz
pF
−12V, I
−12V, I
E
=
=100MHz
Output capacitance
Cob
−
5.0
E=
=
Packaging specifications and hFE
Package
Code
Taping
TL
T146
3000
−
T106
T2L
Basic ordering
unit (pieces)
3000
3000
8000
Type
hFE
2SA2029
QR
−
−
−
−
−
2SA1037AK QR
2SA1576A QR
−
−
−
−
−
2SA1774
QR
−
hFE values are classified as follows:
Item
Q
R
hFE
120 to 270 180 to 390
www.rohm.com
2012.01 - Rev.C
2/3
c
○ 2012 ROHM Co., Ltd. All rights reserved.
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029
Data Sheet
Electrical characteristic curves
−35.0
−100
−80
−50
−10
−8
VCE= −6V
Ta=25˚C
Ta=25˚C
Ta=100˚C
25˚C
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−20
−10
−500
−450
−400
−350
−300
−40˚C
−5
−250
−200
−60
−40
−20
−6
−4
−2
−2
−1
−150
−100
−0.5
−50μA
−3.5μA
−0.2
−0.1
IB=0
I
B
=0
−2.0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE
0
−0.4
−0.8
−1.2
−1.6
0
−1
−2
−3
−4
−5
V)
COLLECTOR TO EMITTER VOLTAGE : VCE
(
(V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (I)
Fig.3 Grounded emitter output
characteristics (II)
500
500
−1
V
CE= −5V
−3V
−1V
Ta=100˚C
25˚C
Ta=25˚C
Ta=25˚C
−0.5
−40˚C
200
100
50
200
100
−0.2
−0.1
I
C/I
B
=
50
20
10
50
−0.05
VCE= −6V
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
COLLECTOR CURRENT : I mA)
C
(
COLLECTOR CURRENT : IC (
COLLECTOR CURRENT : I
C
(
Fig.4 DC current gain vs.
collector current (I)
Fig.5 DC current gain vs.
collector current (II)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
1000
500
−1
20
Ta=25˚C
CE= −12V
lC/lB=10
Ta=25˚C
f=1MHz
V
I
I
E
=
=
0A
0A
−0.5
C
10
5
200
100
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
2
−0.05
50
−0.5 −1
−2
−5
−10 −20
0.5
1
2
5
10 20
50 100
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : I (mA)
E
COLLECTOR CURRENT : I
C
(
Fig.9 Collector output capacitance vs.
collector-base voltage
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs.
emitter current
Emitter inputcapacitance vs.
emitter-base voltage
www.rohm.com
2012.01 - Rev.C
3/3
c
○ 2012 ROHM Co., Ltd. All rights reserved.
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-
controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
R1120A
相关型号：
2SA2029T2LS
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, VMT3, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明