2SA2030PT [CHENMKO]
Low Ferquency PNP Transistor; 低Ferquency PNP晶体管
| 型号： | 2SA2030PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Low Ferquency PNP Transistor |
| 文件： | 总3页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
2SA2030PT
SURFACE MOUNT
Low Ferquency PNP Transistor
VOLTAGE 12 Volts CURRENT 0.5 Ampere
APPLICATION
* For switching,for muting.
FEATURE
* Small surface mounting type. (SOT-723)
* A collector current is large.
SOT-723
* Collector saturation voltage is low.
VCE(sat)<=250mA
At Ic=200mA/IB=10mA
0.17~0.27
(2)
(3)
0.4
0.4
CONSTRUCTION
1.15~1.25
0.75~0.85
* PNP Silicon Transistor
(10) .17~0.27
0.27~0.37
0.75~0.85
MARKING
* 36
0.45~0.55
0.11~0.14
C
(3)
1.15~1.25
CIRCUIT
SOT-723
Dimensions in millimeters
(2)
E
(1)
B
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
CONDITION
Open Emitter
SYMBOL
VCBO
MIN.
-
MAX.
UNITS
Volts
Collector - Base Voltage
-15
-12
Collector - Emitter Voltage
Collector Current DC
Open Base
VCEO
IC
-
-
Volts
-500
mAmps
-
-1000
mAmps
ICM
Peak Collector Current
TA ≤ 25OC; Note 1
PTOT
TSTG
Total Power Dissipation
Storage Temperature
-
150
mW
oC
-55
+150
Junction Temperature
TJ
-
+150
+150
oC
oC
Operating Ambient Temperature
TAMB
-55
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2004-06
RATING CHARACTERISTICS ( 2SA2030PT )
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
collector cut-off current
CONDITIONS
UNIT
MIN. Typ. MAX.
-0.1
uA
ICBO
−
−
VCB=-15V
=-10uA
collector-base breakdown voltage
collector-emitter breakdown voltage
-15
-12
IC
IC =-1mA
=-10uA
−
−
−
−
BVCBO
BVCEO
V
V
BVEBO
emitter-base breakdown voltage
−
−
IE
−
-6
270
−
V
FE
h
680
DC
current transfer ratio
VCE=-2V , IC=-10mA
IC/IB=-200mA/-10mA
collector-emitter saturation
mV
VCEsat
Cob
-100 -250
v
oltage
I
pF
z
; f = 1 MH
6.5
collector output capacitance
transition frequency
=-10V
−
−
−
E = 0; VCB
MHz
=
-1
MHz
IE
0 mA; VCE
= - 2V f = 30
260
;
−
fT
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
RATING CHARACTERISTIC CURVES ( 2SA2030PT )
1000
500
1000
500
1000
500
V
CE=2V
V
CE=2V
IC / IB=20
200
100
50
200
100
50
200
100
50
Ta=125°C
Ta=25°C
Ta= −40°C
Ta=125°C
Ta=25°C
Ta= −40°C
Ta=125°C
Ta=25°C
Ta= −40°C
20
10
5
20
10
5
20
10
5
2
1
2
1
2
1
0
0.5
1.0
1.5
1
2
5
10 20
50 100 200 500 1000
1
2
5
10 20
50 100 200 500 1000
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded Emitter Propagation
Characteristics
Fig.2 DC Current Gain vs.
Collector Current
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
1000
10000
5000
1000
500
Ta=25°C
I
C
/ I
B
=20
VCE=2V
Ta=25°C
500
Ta= −40°C
Ta=25°C
Ta=125°C
200
100
50
2000
1000
500
200
100
50
IC / IB=50
IC / IB=20
20
10
5
20
10
5
200
100
50
IC / IB=10
20
10
2
1
2
1
1
2
5
10 20
50 100 200 500 1000
1
2
5
10 20
50 100 200 500 1000
1
2
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Fig.5 Base-Emitter Saturation
Voltage vs.Collecter Current
Fig.6 Gain Bandwidth Product vs.
Emitter Current
Collector Current (ΙΙ)
1000
IE=0A
f=1MHz
Ta=25°C
500
200
100
50
Cib
20
10
5
Cob
2
1
0.1 0.2 0.5
1
2
5
10 20
50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
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