2SA1577FRAT106R [ROHM]
Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, UMT3, SC-70, 3 PIN;
| 型号： | 2SA1577FRAT106R |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, UMT3, SC-70, 3 PIN |
| 文件： | 总5页 (文件大小：1176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AEC-Q101 Qualified
Medium Power Transistor (-32V, -05A)
2SA1577FRA
Features
Dimensions (Unit : mm)
1) Large IC.
2SA1577FRA
I
CMAX. = -500mA
2) Low VCE(sat). Ideal for low-voltage operation.
3) Complements the 2SC4097FRA
2.0 0.2
1.3 0.1
0.9 0.1
0.65 0.65
0.7 0.1
0.2
(1)
(2)
Structure
∼
0
0.1
Epitaxial planer type
PNP silicon transistor
(3)
+
−
0.1
0.3
0.15 0.05
0
All terminals have
same dimensions
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Limits
−40
Unit
V
Abbreviated symbol: H
∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
−32
V
Denotes hFE
∗
−5
V
∗
−0.5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
0.2
W
°C
°C
Tj
150
Tstg
−55 to +150
∗
PC MAX. must not be exceeded.
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
−
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IC= −100μA
IC= −1mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
−40
−32
−5
−
−
−
V
V
−
IE= −100μA
VCB= −20V
VEB= −4V
−
−
V
−
−1
−1
−0.6
390
−
μA
μA
V
IEBO
−
Rmitter cutoff current
−
−
IC/IB= −300mA/−30mA
Collector-emitter saturation voltage
DC current transfer ratio
V
CE(sat)
hFE
fT
−
120
−
V
CE= −3V, IC= −100mA
−
−
V
CE= −5V, IE=20mA, f=100MHz
Transition frequency
200
7
MHz
pF
VCB= −10V, IE=0A, f=1MHz
Output capacitance
Cob
−
−
Packaging specifications
Package
Code
Taping
T106
hFE Basic ordering unit (pieces)
QR
3000
Type
2SA1577FRA
hFE values are classifies as follows.
Item
Q
R
hFE
120 to 270 180 to 390
www.rohm.com
2009.12 - Rev.B
1/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
2SA1577FRA
Data Sheet
Electrical characteristic curves
-500
-400
-300
-500
-100
-80
-
0.9mA
0.8mA
0.7mA
Ta=25 C
Ta=25 C
1mA
V
CE=−3V
Ta
=
100°C
25
-200
-100
-50
-
-
°C
55°C
-
-
5.0mA
4.5mA
4.0mA
−
-
-
0.6mA
0.5mA
0.4mA
-3.5mA
-20
-10
-5
-60
-40
-3.0mA
-
2.5mA
-
2.0mA
-
-200
-
1.5mA
-
0.3mA
-2
-1
-1.0mA
-
0.2mA
-20
0
-100
0
-0.5
-
0.5mA
-0.1mA
-0.2
-0.1
I
B=
0A
I
B=0A
0
-1
-2
-3
-4
-5
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
0
-5
-10
V)
COLLECTOR TO EMITTER VOLTAGE : VCE V)
(
COLLECTOR TO EMITTER VOLTAGE : VCE (
BASE TO EMITTER VOLTAGE : VBE V)
(
Fig.2 Grounded emitter output
Fig.1 Grounded emitter propagation
Fig.3 Ground emitter output
characteristics (Ι)
characteristics (ΙΙ)
1000
1000
500
Ta=25 C
VCE=-3V
Ta=25 C
-1
500
VCE
=
-
-
-
5V
3V
1V
-0.5
Ta
=
100 C
25 C
200
100
50
200
100
-0.2
-0.1
-
55 C
IC/IB
=
50
50
20
-0.05
20
10
20
-0.02
-1 -2
-5 -10 -20
-50 -100 -200 -500 -1000
-1 -2
-5 -10 -20
-50 -100 -200 -500 -1000
-1 -2
-5 -10 -20 -50 -100 -200 -500
COLLECTOR CURRENT : IC
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
(
mA)
Fig.4 DC current gain vs.
Fig.5 DC current gain vs.
Fig.6 Collector emitter saturation
collector current (Ι)
collector current (ΙΙ)
voltage vs. collector current (Ι)
-1.0
Ta
VCE
=
25 C
Ta
1MHz
0A
0A
=
25 C
lC/lB=10
=-
5V
f
IE
=
=
=
-0.5
100
50
IC
1000
500
-0.3
-0.2
-0.1
20
10
5
Ta
=
100 C
25 C
55 C
200
-0.05
-
100
50
-0.03
-0.02
2
-0.01
0.5
1
2
5
10
20
mA)
50
-0.5
-1
-2
-5
-10 -20
-50
V)
-1 -2
-10 -20
-50 -100 -200 -500 -1000
-5
EMITTER CURRENT : IE
(
COLLECTOR TO BASE VOLTAGE : VCB
EMITTER TO BASE VOLTAGE : VEB V)
Fig.9 Collectur output capacitance vs.
(
COLLECTOR CURRENT : IC (mA)
(
Fig.8 Gain bandwidth product vs.
emitter current
Fig.7 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
collector-base voltage. Emitter input
capacitance vs. emitter -base voltage
www.rohm.com
2009.12 - Rev .B
2/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
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(Note 1)
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confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
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Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
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please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
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1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
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3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
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Notice-PAA-E
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