2SA1577PTP [CHENMKO]
Transistor,;
| 型号： | 2SA1577PTP |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Transistor, |
| 文件： | 总3页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
2SA1577PT
SURFACE MOUNT
Medium Power PNP Transistor
VOLTAGE 32 Volts CURRENT 0.5 Ampere
APPLICATION
* Medium Power Amplifier .
FEATURE
* Surface mount package. (SC-70/SOT-323)
* Low saturation voltage V
SC-70/SOT-323
* Low cob. Cob=7.0pF(TypC.)E(sat)=-0.4V(max.)(IC=-100mA)
* PC= 200mW (mounted on ceramic substrate).
* High saturation current capability.
0.65
0.65
1.3±0.1
2.0±0.2
CONSTRUCTION
* PNP Silicon Transistor
* Epitaxial planner type
0.3±0.1
1.25±0.1
MARKING
* HFE(P):UE
* HFE(Q):PC
0.8~1.1
* HFE(R):RB
0.05~0.2
0~0.1
0.1Min.
(3)C
2.0~2.45
CIRCUIT
(1)
B
(2)E
SC-70/SOT-323
Dimensions in millimeters
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
CONDITION
Open Emitter
SYMBOL
VCBO
MIN.
-
MAX.
-40
UNITS
Volts
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Open Base
VCEO
VEBO
IC
--
-32
-5
Volts
Volts
mAmps
mAmps
mAmps
mW
Open Collector
-
-
-500
-500
-10
Peak Collector Current
Peak Base Current
ICM
-
-
IBM
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
TA ≤ 25OC; Note 1
PTOT
TSTG
TJ
-
200
-55
-
+150
+150
+150
oC
oC
TAMB
-55
oC
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2002-10
RATING CHARACTERISTICS ( 2SA1577PT )
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
PARAMETERS
Collector Cut-off Current
CONDITION
SYMBOL
ICBO
MIN.
-
TYPE
-
MAX.
-1.0
UNITS
uA
IE=0; VCB=-20V
Emitter Cut-off Current
DC Current Gain
IC=0; VEB=-4V
ICEO
-
-
-
-1.0
390
uA
VCE=-3V; Note 1
IC=-10mA; Note 2
hFE
82
Collector-Emitter Saturation Voltage
Base-Emitter Saturatio Voltage
Output Collector Capacitance
Transition Frequency
IC=-100mA; IB=-10mA
IC=-100mA; IB=-10mA
VCEsat
VBEsat
Cob
-
-
-
-
-
-
-0.4
Volts
mVolts
pF
-1.1
IE=ie=0; VCB=-10V;
f=1MHz
7
-
-
IC=2mA; VCE=-10V;
f=100MHz
fT
200
MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390
RATING CHARACTERISTIC CURVES ( 2SA1577PT )
Fig.2 Grounded emitter output
characteristics (1)
Fig.3 Grounded emitter output
characteristics (2)
Fig.1 Grounded emitter propagation
characteristics
-1000
-100
-500
-400
-300
-200
-100
0
Ta=
25OC
Ta=
25OC
V
CE=-3V
-500
-200
-100
-50
-5.0mA
-4.5mA
-4.0mA
-3.5mA
-3.0mA
-2.5mA
-80
Ta=100OC
25OC
-60
-40
-20
-10
-5
- 55OC
-2.0mA
-1.5mA
-2
-1
-1.0mA
-0.5mA
0A
-20
0
-0.5
-0.10mA
IB=0A
-0.2
-0.1
IB
=
0
-1
-2
-3
-4
-5
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8
BASE TO EMITTER VOLTAGE : VBE
-0
-5
-10
COLLECTOR TO EMITTER VOLTAGE : VCE
(
V)
(
V)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
RATING CHARACTERISTIC CURVES ( 2SA1577PT )
Fig.4 Collector-emitter saturation
voltage vs. collector current
Fig.5 Collector-emitter saturation
voltage vs. collector current
Fig.6 DC current gain vs.
collector current
-1
-1
1000
500
Ta=
25OC
Ta=25OC
lC/lB=10
-0.5
-0.5
200
100
50
-0.2
-0.1
-0.2
-0.1
lC
/l
B
=
50
Ta
=
100OC
25OC
-55OC
20
10
-0.05
-0.05
20
10
-0.02
-0.5 -1 -2
-0.02
-0.5 -1 -2
-0.1
-0.5 -1.0
-5 -10
-50 -100
-1000
-5 -10
-50 -100
-500
-5 -10
-50 -100
-500
COLLECTOR CURRENT : I
C(mA)
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : I (mA)
C
Fig.8 Gain bandwidth product
vs. emitter current
Fig.7 DC current gain vs.
collector current
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
100
1000
500
Ta 25OC
=
V
CE=
-3V
Ta 25OC
=
VCE -5V
=
f
I
I
1MHz
=
1000
500
E
0A
0A
=
50
20
C
=
200
100
50
200
100
10
5
50
20
10
2
-0.5
-0.1
-0.5 -1
-5 -10
-50 -100
-1000
0.5
1
2
5
10
20
50
-1
-2
-5
-10
-20
-50
V)
EMITTER CURRENT : IE mA)
COLLECTOR CURRENT : I
C(
mA)
COLLECTOR TO BASE VOLTAGE : VCB
EMITTER TO BASE VOLTAGE : VEB
(
(
(
V)
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