2SA1576U3 [ROHM]
hFE的直线性优异的晶体管。与2SC4081U3互补。;
| 型号： | 2SA1576U3 |
| 厂家： | 
ROHM |
| 描述： | hFE的直线性优异的晶体管。与2SC4081U3互补。 晶体管 |
| 文件： | 总3页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
Transistors
General Purpose Transistor
(−50V, −0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 /
2SA933AS
!Features
!External dimensions (Units : mm)
1) Excellent hFE linearity.
2) Complements the 2SC2412K /
2SC4081 / 2SC4617 / 2SC5658 /
2SC1740S.
2SA1037AK
2SA1576A
1.25
2.1
1.6
2.8
0.1to0.4
0.3to0.6
!Structure
Epitaxial planar type.
PNP silicon transistor
Each lead has same dimensions
Each lead has same dimensions
(1) Emitter
(2) Base
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
ROHM : UMT3
EIAJ : SC-70
(2) Base
(3) Collector
(3) Collector
Abbreviated symbol : F ∗
Abbreviated symbol : F ∗
2SA1774
2SA2029
1.2
( )
1
0.2 0.8 0.2
( )
2
( )
3
( )
2
(3)
0.8
1.6
( )
1
0.15Max.
0.1Min.
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collecto
ROHM : VMT3
EIAJ :
ROHM : EMT3
EIAJ : SC-75A
Abbreviated symbol : F ∗
Abbreviated symbol : F ∗
2SA933AS
4
2
0.45
0.45
2.5 0.5
5
2
( )
1
(
)
( )
3
Taping specifications
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
∗ Denotes hFE
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
Transistors
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
−60
Unit
VCBO
VCEO
VEBO
V
V
−50
−6
V
I
C
−0.15
0.2
A (DC)
Collector current
2SA1037AK, 2SA1576A
Collector power
2SA2029, 2SA1774
dissipation
P
C
0.15
0.3
W
2SA933AS
Tj
150
˚C
˚C
Junction temperature
Tstg
−
55~+150
Storage temperature
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ. Max.
Unit
V
Conditions
Collector-base breakdown voltage
BVCBO
−60
−50
−6
−
−
−
−
−
I
I
I
C
=
=
−50µA
−1µA
Collector-emitter breakdown voltage BVCEO
V
C
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
−
−
V
E
=
−50µA
I
CBO
EBO
CE(sat)
FE
−
−0.1
−0.1
−0.5
560
−
µA
µA
V
V
CB
EB
=
−60V
Emitter cutoff current
I
−
−
V
=
−6V
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
V
−
−
I
C/I
B
=
−50mA/−5mA
h
120
−
−
−
V
V
V
CE
CE
CB
=
=
=
−6V, I −1mA
C=
f
T
140
4.0
MHz
pF
−12V, I
−12V, I
E
=
=
2mA, f
=30MHz
Output capacitance
Cob
−
5.0
E
0A, f 1MHz
=
!Packaging specifications and hFE
Package
Code
Taping
TL
T146
T106
T2L
TP
Basic ordering
unit (pieces)
3000
3000
3000
8000
5000
Type
hFE
2SA2029
QRS
−
−
−
−
−
−
−
−
−
−
2SA1037AK QRS
2SA1576A QRS
−
−
−
−
−
−
−
2SA1774
QRS
−
−
2SA933AS QRS
−
hFE values are classified as follows:
Item
Q
R
S
hFE
120~270
180~390
270~560
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
Transistors
!Electrical characteristic curves
−35.0
−100
−50
−10
−8
V
CE=−6V
Ta=25˚C
Ta=25˚C
Ta=100˚C
25˚C
−40˚C
−31.5
−20
−10
−500
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−450
−400
−350
−300
−80
−60
−40
−20
−5
−250
−200
−6
−4
−2
−2
−1
−150
−100
−0.5
−50µA
−3.5µA
−0.2
−0.1
I
B
=0
IB=0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE
0
−0.4
−0.8
−1.2
−1.6 −2.0
0
−1
−2
−3
−4
−5
V)
COLLECTOR TO EMITTER VOLTAGE : VCE
(
(V)
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (I)
Fig.1 Grounded emitter propagation
characteristics
Fig.3 Grounded emitter output
characteristics (II)
500
−1
500
Ta=25˚C
Ta=100˚C
25˚C
V
CE=−5V
−3V
−1V
Ta=25˚C
−0.5
−40˚C
200
100
50
200
100
−0.2
−0.1
I
C/I
B=
50
20
10
50
−0.05
V
CE=−6V
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
COLLECTOR CURRENT : I mA)
C (
COLLECTOR CURRENT : I
C
(
COLLECTOR CURRENT : I
C
(
Fig.5 DC current gain vs.
collector current (II)
Fig.4 DC current gain vs.
collector current (I)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
1000
500
20
−1
Ta=25˚C
CE=−12V
Ta=25˚C
f=1MHz
lC/lB=10
V
I
I
E
=
=
0A
0A
−0.5
C
10
5
200
100
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
2
−0.05
50
−0.5 −1
−2
−5
−10 −20
0.5
1
2
5
10 20
50 100
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : I (mA)
E
COLLECTOR CURRENT : I
C
(
Fig.9 Collector output capacitance vs.
collector-base voltage
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs.
emitter current
Emitter inputcapacitance vs.
emitter-base voltage
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