2SA1576UB-R [ROHM]
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, UMT3F, 3 PIN;
| 型号： | 2SA1576UB-R |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, UMT3F, 3 PIN |
| 文件： | 总3页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
General purpose small signal amplifier
(50V, 0.15A)
2SA1576UB
Applications
Dimensions (Unit : mm)
General purpose small signal amplifier.
UMT3F
2.0
0.9
0.32
(3)
Features
1) Excellent hFE linearity.
2) Complements the 2SC4081UB.
(1)
(2)
0.13
0.65 0.65
1.3
Structure
PNP silicon epitaxial planar transistor.
Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : F
∗ = Denotes hFE
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Symbol
Limits
−60
Unit
V
VCBO
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
−50
V
−6
V
I
C
−150
−200
200
mA
mA
mW
˚C
Collector current
∗1
∗2
I
CP
Power dissipation
P
D
Junction temperature
Range of storage temperature
Tj
150
Tstg
−
55 to +150
˚C
∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCEO
BVCBO
BVEBO
−50
−60
−6
−
V
V
I
I
I
C
=
=
−1mA
−50μA
−50μA
−
−
C
−
−
V
E=
I
CBO
EBO
CE(sat)
FE
−
−100
−100
−0.5
390
−
nA
nA
V
V
CB
EB
=
−60V
−6V
Emitter cutoff current
I
−
−
V
=
Collector-emitter saturation voltage
DC current gain
V
−
−
I
C/I
B=
−50mA/−5mA
−6V, I −1mA
2mA, f
0A, f 1MHz
h
120
−
−
−
V
V
V
CE
CE
CB
=
=
=
C=
Transition frequency
f
T
140
4.0
MHz
pF
−12V, I
−12V, I
E
=
=100MHz
Output capacitance
Cob
−
5.0
E
=
=
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2010.09 - Rev.D
1/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
2SA1576UB
Data Sheet
hFE rank categories
Rank
Q
R
hFE
120 to 270 180 to 390
Electrical characteristic curves
−35.0
−10
−8
−100
−80
−50
VCE= −6V
Ta=25˚C
Ta=25˚C
Ta=100˚C
25˚C
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−20
−10
−500
−450
−400
−350
−300
−40˚C
−5
−250
−200
−6
−4
−2
−60
−40
−20
−2
−1
−150
−100
−0.5
−50μA
−3.5μA
−0.2
−0.1
I
B
=0
IB=0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE
0
−0.4
−0.8
−1.2
−1.6 −2.0
0
−1
−2
−3
−4
−5
V)
COLLECTOR TO EMITTER VOLTAGE : VCE
(
(V)
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (I)
Fig.3 Grounded emitter output
characteristics (II)
500
−1
500
Ta=100˚C
25˚C
Ta=25˚C
V
CE= −5V
−3V
−1V
Ta=25˚C
−0.5
−40˚C
200
100
50
200
100
−0.2
−0.1
I
C/I
B
=
50
20
10
50
−0.05
VCE= −6V
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
COLLECTOR CURRENT : I
C
(
COLLECTOR CURRENT : I mA)
C (
COLLECTOR CURRENT : I
C
(
Fig.4 DC current gain vs.
collector current (I)
Fig.5 DC current gain vs.
collector current (II)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
1000
500
−1
20
Ta=25˚C
CE= −12V
lC/lB=10
Ta=25˚C
f=1MHz
V
I
I
E
=
=
0A
0A
−0.5
C
10
5
200
100
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
2
−0.05
50
0.5
1
2
5
10 20
50 100
−0.5 −1
−2
−5
−10 −20
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
EMITTER CURRENT : I (mA)
E
COLLECTOR CURRENT : I
C
(
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
www.rohm.com
2010.09 - Rev.D
2/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
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