1SS133 [ROHM]
Switching diode; 开关二极管
| 型号： | 1SS133 |
| 厂家： | 
ROHM |
| 描述： | Switching diode |
| 文件： | 总2页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1SS133
Diodes
Switching diode
1SS133
!External dimensions (Units : mm)
!Applications
High speed switching
CATHODE BAND (YELLOW)
φ0.4±0.1
!Features
1) Glass sealed envelope. (MSD)
φ1.8±0.2
29.0±1.0
2.7±
0.3
29.0±1.0
rr
2) High speed. (t =1.2ns Typ.)
ROHM : MSD
EIAJ : −
JEDEC : DO-34
3) High reliability.
!Construction
Silicon epitaxial planar
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
90
Unit
V
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Power dissipation
V
RM
VR
80
V
IFM
400
130
600
300
175
mA
mA
mA
mW
°C
I
O
I
surge
P
Junction temperature
Storage temperature
Tj
−65~+175
Tstg
°C
!Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
1.2
0.5
2
Unit
V
Conditions
1MHz
V
F
−
−
−
−
−
−
−
−
I =
F
100mA
Reverse current
I
R
µA
pF
ns
V
V
R
=80V
Capacitance between terminals
Reverse recovery time
CT
R=
0.5V, f
6V, I
=
t
rr
4
VR=
F
=
10mA, R =50Ω
L
1SS133
Diodes
!Electrical characteristics curves (Ta=25°C)
100
3.0
2.5
2.0
1.5
1.0
0.5
0
f=1MHz
50
3000
˚
C
100
20
1000
C
˚
70
10
300
5
C
˚
50
100
2
C
˚
Ta=25
30
1
10
0.5
3
0.2
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE : V (V)
0
20
40
60
80
100 120
(V)
0
5
10
15
20
25
(V)
30
F
REVERSE VOLTAGE : V
R
REVERSE VOLTAGE : V
R
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between
terminals characteristics
10
5
3
2
1
0
PULSE
Single pulse
V
R
=
6V
I
rr
=
1/10IR
2
1
0.5
0.2
0.1
0
10
20
30
0.01
0.1
1
10
100
1000
PULSE WIDTH : Tw (ms)
FORWARD CURRENT : I
F
(mA)
Fig.5 Surge current characteristics
Fig. 4 Reverse recovery time
characteristics
0.01µF
D.U.T.
5kΩ
PULSE GENERATOR
OUTPUT 50Ω
SAMPLING
Ω
OSCILLOSCOPE
50
Fig. 6 Reverse recovery time (trr) measurement circuit
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