1SS133_15 [WINNERJOIN]
High-speed switching diode;
| 型号： | 1SS133_15 |
| 厂家： | 
SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
| 描述： | High-speed switching diode |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
1SS133
High-speed switching diode
Features
1. Glass sealed envelope.
2. High reliability.
3. High speed.
Applications
High speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Ta=25℃
Parameter
Symbol
VRM
VR
Limits
90
Unit
V
Parameter
Symbol
Isurge
P
Value
600
Unit
mA
mW
℃
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current(1s)
Power dissipation
Junction temperature
Storage temperature
80
V
300
IFM
400
130
mA
mA
Tj
175
Io
Tstg
-65~+175
℃
Electrical Characteristics
Ta=25℃
Parameter
Forward voltage
Symbol
Min.
Typ.
0.92
0.02
1.55
1.5
Max.
1.2
0.5
2
Unit
V
Conditions
VF
IR
-
-
-
-
IF=100mA
Reverse current
μA
pF
ns
VR=80V
Capacitance between terminals
Reverse recovery time
CT
trr
VR=0.5V,f=1MHz
4
VR=6V,IF=10mA,RL=50
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
RoHS
1SS133
Dimensions in mm
Cathode identification
0.4±0.1
Anode
Cathode
1.8±0.2
29±1
2.7±0.3
29±1
Standard Glass Case
JEDEC DO 34
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
RoHS
1SS133
Characteristics (Ta=25℃ unless specified otherwise)
Forward voltage: VF (V)
Reverse voltage: VR (V)
Figure 2. Reverse characteristics
Figure 1. Forward characteristics
Reverse voltage: VR (V)
Forward current: IF (mA)
Figure 3. Capacitance between terminals
characteristics
Figure 4. Reverse recovery time
characteristics
Pulse width: Tw (ms)
WEJ ELECTRONIC CO.,LTD
Figure 6. Reverse recovery time (trr)
measurement circuit
Figure 5. Surge current characteristics
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
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