VN2410LZL1G [ROCHESTER]
暂无描述;
| 型号： | VN2410LZL1G |
| 厂家： | 
Rochester Electronics |
| 描述： | 暂无描述 |
| 文件： | 总4页 (文件大小：797K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN2410L
Small Signal MOSFET
240 V, 200 mA, N−Channel TO−92
Features
• Pb−Free Packages are Available*
http://onsemi.com
MAXIMUM RATINGS
200 mA, 240 V
Rating
Drain−Source Voltage
Symbol
Value
240
Unit
Vdc
Vdc
R
DS(on) = 10 Ω
V
DSS
DGR
N−Channel
Drain−Gate Voltage
V
240
D
Gate−Source Voltage
− Continuous
V
20
40
Vdc
Vpk
GS
− Non−repetitive (t ≤ 50 μs)
V
GSM
p
Continuous Drain Current
Pulsed Drain Current
I
200
500
mAdc
mAdc
D
G
I
DM
Power Dissipation @ T = 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
C
S
Operating and Storage Temperature
T , T
−55 to
°C
J
stg
150
THERMAL CHARACTERISTICS
Characteristic
TO−92
CASE 29
STYLE 22
Symbol
Max
312.5
300
Unit
°C/W
°C
Thermal Resistance, Junction to Ambient
R
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
θ
JA
1
2
3
Maximum Lead Temperature for Soldering
Purposes, 1/16 inch from case for 10
seconds
T
L
STRAIGHT LEAD
BULK PACK
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
& PIN ASSIGNMENT
VN2
410L
AYWW
1
3
Source
Drain
2
Gate
A
Y
= Assembly Location
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
January, 2009 − Rev. 5
VN2410L/D
VN2410L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
STATIC CHARACTERISTICS
Symbol
Min
Max
Unit
Drain−Source Breakdown Voltage
V
240
−
Vdc
(BR)DSS
(V = 0, I = 100 μA)
GS
D
Zero Gate Voltage Drain Current
(V = 120 Vdc, V = 0)
I
μAdc
DSS
−
−
10
500
DS
GS
(V = 120 Vdc, V = 0, T = 125°C)
DS
GS
A
Gate− Body Leakage
(V = 0, V 15 V)
I
−
100
2.0
−
nAdc
Vdc
Adc
Ω
GSS
=
GS
DS
Gate Threshold Voltage
(V = V , I = 1.0 mA)
V
0.8
1.0
GS(th)
D(on)
DS
GS
D
On−State Drain Current (Note 1)
(V = 10 V, V ≥ 2.0 V )
DS(on)
I
GS
DS
Drain−Source On Resistance (Note 1)
(V = 2.5 V, I = 0.1 A)
r
DS(on)
−
−
10
10
GS
D
(V = 10 V, I = 0.5 A)
GS
D
Forward Transconductance (Note 1)
(V = 10 V, I = 0.5 A)
g
fs
300
−
mS
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
125
50
pF
pF
pF
iss
(V = 25 Vdc, V = 0,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn−On Time
C
20
rss
t
t
−
−
−
−
8.0
8.0
23
ns
ns
ns
ns
(on)
t
(r)
(V = 60 Vdc, I = 0.4 A,
DD
D
R = 150 Ω, R = 25 Ω)
L
G
Turn−Off Time
(off)
t
(f)
34
1. Pulse Test; Pulse Width < 300 μs, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
VN2410L
Package
Shipping
TO−92
1000 Units / Box
1000 Units / Box
VN2410LG
TO−92
(Pb−Free)
VN2410LZL1
TO−92
2000 Ammo Pack
2000 Ammo Pack
VN2410LZL1G
TO−92
(Pb−Free)
http://onsemi.com
2
VN2410L
PACKAGE DIMENSIONS
TO−92
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
STRAIGHT LEAD
BULK PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
N
P
R
V
0.105
0.100
---
2.66
2.54
---
C
SECTION X−X
0.115
0.135
2.93
3.43
1
N
---
---
STYLE 22:
PIN 1. SOURCE
N
2. GATE
3. DRAIN
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
A
BENT LEAD
TAPE & REEL
AMMO PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
P
T
MILLIMETERS
SEATING
PLANE
DIM MIN
MAX
5.20
5.33
4.19
0.54
2.80
0.50
---
K
A
B
C
D
G
J
4.45
4.32
3.18
0.40
2.40
0.39
12.70
2.04
1.50
2.93
3.43
D
X X
G
K
N
P
R
V
J
2.66
4.00
---
V
C
---
SECTION X−X
1
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
VN2410L/D
相关型号：
VN2410M-1
Small Signal Field-Effect Transistor, 0.19A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA, TO-237, 3 PIN
VISHAY
VN2410M-1-18
Small Signal Field-Effect Transistor, 0.19A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA, TO-237, 3 PIN
VISHAY
VN2410M-1TA
Small Signal Field-Effect Transistor, 0.19A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA, TO-237, 3 PIN
VISHAY
VN2410M18-1
Small Signal Field-Effect Transistor, 0.19A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA, TO-237, 3 PIN
VISHAY
VN2410M18-2
Small Signal Field-Effect Transistor, 0.19A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA, TO-237, 3 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明