VN2460 [SUPERTEX]
N-Channel Enhancement-Mode Vertical DMOS FETs; N沟道增强型垂直DMOS场效应管
| 型号： | VN2460 |
| 厂家： | 
Supertex, Inc |
| 描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 文件： | 总4页 (文件大小：458K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN2460
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
TO-243AA*
BVDSS
/
RDS(ON)
(max)
ID(ON)
(min)
BVDGS
TO-92
Die**
600V
20Ω
0.25A
VN2460N3
VN2460N8
VN2460NW
*
Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.
** Die in wafer form.
Product marking for TO-243AA:
Features
❏
❏
❏
❏
❏
❏
❏
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
VN4F❋
Where ❋ = 2-week alpha date code
Low CISS and fast switching speeds
Excellent thermal stability
Advanced DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Integral Source-Drain diode
High input impedance and high gain
Applications
❏
❏
❏
❏
❏
❏
Motor controls
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
D
G
D
S
BVDSS
BVDGS
± 20V
TO-243AA
S G D
(SOT-89)
TO-92
Operating and Storage Temperature
-55°C to +150°C
Soldering Temperature*
300°C
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN2460
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TC = 25°C
°C/W
°C/W
TO-243AA
TO-92
0.2A
0.6A
0.5A
1.6W†
15
78 †
0.2A
0.6A
0.5A
0.16A
1W
125
170
0.16A
* ID (continuous) is limited by max rated Tj.
† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
600
1.5
Typ
Max
Unit
Conditions
Drain-to-Source
Breakdown Voltage
BVDSS
V
VGS = 0V, ID = 2.0mA
VGS(th)
∆VGS(th)
IGSS
Gate Threshold Voltage
V
mV/°C
nA
VGS = VDS , ID = 2.0mA
VGS = VDS , ID = 2.0mA
VGS = ±20V, VDS = 0V
Change in VGS(th) with Temperature
Gate Body Leakage
-5.5
100
10
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V, VDS = Max Rating
1
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
0.25
50
A
VGS = 10V, VDS = 25V
RDS(ON)
25
20
VGS = 4.5V, ID = 100mA
VGS = 10V, ID = 100mA
VGS = 10V, ID = 100mA
VDS = 25V, ID = 100mA
Static Drain-to-Source
ON-State Resistance
Ω
∆RDS(ON)
GFS
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
1.7
%/°C
Ω
m
CISS
COSS
CRSS
td(ON)
tr
150
50
25
10
10
25
20
1.5
VGS = 0V, VDS = 25V
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
f = 1.0 MHz
VDD = 25V,
ID = 250mA,
RGEN = 25Ω
Rise Time
ns
V
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
VSD
Diode Forward Voltage Drop
VGS = 0V, ISD = 400mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
2
VN2460
Typical Performance Curves
Output Characteristics
Saturation Characteristics
1.2
0.5
0.4
VGS = 10V
1.0
0.8
0.6
0.4
0.2
0
8V
6V
VGS = 10V
8V
5V
0.3
0.2
0.1
0
6V
5V
4V
3V
4V
3V
0
10
20
30
40
50
0
2
4
6
8
10
V
(Volts)
V
(Volts)
DS
DS
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
0.5
0.4
0.3
0.2
0.1
0.0
2.0
1.6
1.2
V
= 25V
DS
SOT-89
T
= -55°C
A
T
T
= 25°C
A
0.8
0.4
0
TO-92
= 125°C
A
0.0
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
150
T
(°C)
C
I
(Amperes)
D
Maximum Rated Safe Operating Area
Thermal Response Characteristics
SOT-89 (pulsed)
1.0
1.0
0.8
0.6
0.4
SOT-89
TO-92 (pulsed)
P
T
= 1.6W
D
C
= 25°C
0.1 TO-92 (DC)
SOT-89 (DC)
0.01
0.2
0
TO-92
P
T
= 1W
D
C
T
= 25°C
C
= 25°C
0.001
1
10
100
1000
0.001
0.01
0.1
1.0
10
V
(Volts)
tp (seconds)
DS
3
VN2460
Typical Performance Curves
On Resistance vs. Drain Current
BVDSS Variation with Temperature
50
40
30
20
10
0
1.2
VGS = 4.5V
1.1
1.0
0.9
0.8
VGS = 10V
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1.0
T (
°
C)
I
(Amperes)
D
J
Transfer Characteristics
V
and R w/ Temperature
DS(ON)
GS(TH)
3.0
0.5
1.6
1.4
1.2
1.0
0.8
V
= 25V
T
= -55°C
DS
A
2.5
2.0
1.5
1.0
0.4
0.3
0.2
T
= 25°C
A
V
@ 2mA
GS(th)
T
= 125°C
A
0.1
0
0.5
0.0
R
@ 10V, 0.1A
0.6
0.4
DS(on)
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
V
(Volts)
T (°C)
J
GS
Gate Drive Dynamic Characteristics
Capacitance vs. Drain Source Voltage
10
300
225
150
75
I
= 0.5A
D
f = 1MHz
8
6
4
V
=10V
DS
V
=40V
DS
C
ISS
2
0
C
OSS
C
RSS
0
0
1.0
2.0
3.0
4.0
5.0
0
10
20
30
40
QG (nanocoulombs)
V
(volts)
DS
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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