KSH117TF [ROCHESTER]
2A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3;
| 型号： | KSH117TF |
| 厂家： | 
Rochester Electronics |
| 描述： | 2A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 晶体管 |
| 文件： | 总8页 (文件大小：790K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSH117
D-PAK for Surface Mount Applications
•
•
•
•
•
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
Electrically Similar to Popular TIP117
D-PAK
I-PAK
1
1
1.Base 2.Collector 3.Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Equivalent Circuit
C
Symbol
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Value
- 100
- 100
- 5
Units
V
V
V
V
CBO
CEO
EBO
V
B
V
I
I
I
- 2
A
C
- 4
A
CP
B
- 50
mA
W
R1
R2
P
Collector Dissipation (T =25°C)
20
C
C
E
R1 10 k Ω
R2 0.6 kΩ
Collector Dissipation (T =25°C)
1.75
150
W
a
T
T
Junction Temperature
Storage Temperature
°C
°C
J
- 65 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
*Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Test Condition
Min.
Max.
Units
V
V
(sus)
I
= - 30mA, I = 0
- 100
CEO
CEO
CBO
EBO
C
B
I
I
I
V
V
V
= - 50V, I = 0
- 20
- 20
- 2
µA
CE
CB
EB
B
= - 100V, I = 0
µA
E
= - 5V, I = 0
mA
C
h
*DC Current Gain
V
V
V
= - 3V, V = - 0.5A
500
1000
200
FE
CE
CE
CE
EB
= - 3V, V = - 2A
12K
EB
= - 3V, I = - 4A
C
V
(sat)
*Collector-Emitter Saturation Voltage
I
I
= -2A, I = - 8mA
- 2
- 3
V
V
CE
C
C
B
= - 4A, I = - 40mA
B
V
V
(sat)
(on)
*Base-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
I
= - 4A, I = - 40mA
- 4
V
V
BE
BE
C
B
V
V
V
= - 3A, I = - 2A
- 2.8
CE
CE
CB
C
f
= -10V, I = - 0.75A
25
MHz
pF
T
C
C
= - 10V, I = 0
200
ob
E
f= 0.1MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A3, June 2001
Typical Characteristics
10000
-10
VCE = - 3V
IC = 250 IB
VBE(sat)
VCE(sat)
-1
1000
100
10
-0.1
-0.01
-0.01
-0.01
-0.1
-1
-10
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
10
VCC=30V
IC=250IB
VCC= - 30V
IC=250IB
tSTG
1
1
tF
tR
tD
0.1
-0.01
0.1
-0.01
-0.1
-1
-10
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
-10
1000
-1
100
10
1
-0.1
-0.01
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A3, June 2001
Typical Characteristics (Continued)
25
20
15
10
5
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A3, June 2001
Package Demensions
D-PAK
6.60 ±0.20
5.34 ±0.30
2.30 ±0.10
0.50 ±0.10
(0.50)
(4.34)
(0.50)
MAX0.96
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
2.30TYP
2.30TYP
[2.30±0.20]
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
0.76 ±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A3, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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[E-
Distributor and field sales
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●
●
●
High DC Current Gain
Quality and reliability
Built-in a Damper Diode at E-C
Lead Formed for surface Mount
Applications (No Suffix)
This pagePrint version
Design tools
●
●
Straight Lead (I-PAK, "-I" Suffix)
Electrically Similar to Popular TIP117
back to top
technical information
buy products
Applications
technical support
my Fairchild
D-PAK for Surface Mount
company
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Product status/pricing/packaging
Product
KSH117TF
KSH117TM
Product status
Full Production
Full Production
Pricing*
Package type
Leads
Packing method
TAPE REEL
$0.349 TO-252(DPAK)
$0.349 TO-252(DPAK)
2
2
TAPE REEL
* 1,000 piece Budgetary Pricing
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Analog and Mixed
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Discrete
Interface
Logic
Microcontrollers
Non-Volatile
Memory
Optoelectronics
Markets and
applications
New products
Product selection and
parametric search
Cross-reference
search
Request samples
Datasheet
Download this
datasheet
Contents
Features | Applications | Product
status/pricing/packaging
How to order products
Product Change Notices
(PCNs)
PDF
Support
Features
e-mail this datasheet
[E-
Distributor and field sales
representatives
●
●
●
High DC Current Gain
Quality and reliability
Built-in a Damper Diode at E-C
Lead Formed for surface Mount
Applications (No Suffix)
This pagePrint version
Design tools
●
●
Straight Lead (I-PAK, "-I" Suffix)
Electrically Similar to Popular TIP117
back to top
technical information
buy products
Applications
technical support
my Fairchild
D-PAK for Surface Mount
company
back to top
Product status/pricing/packaging
Product
Product status
Pricing*
Package type
Leads
Packing method
KSH117ITU
Full Production
$0.349 TO-251(IPAK)
3
RAIL
* 1,000 piece Budgetary Pricing
back to top
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Support | Company | Contact us | Site index | Privacy policy
© Copyright 2002 Fairchild Semiconductor
file:///H|/imaging/BITTING/cpl/20020725_1/07252002_10/FAIR/07252002/KSH117I.html [Jul-26-2002 10:17:12 AM]
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