KSH122ITU [ONSEMI]
NPN 硅达林顿晶体管;
| 型号： | KSH122ITU |
| 厂家： | 
ONSEMI |
| 描述： | NPN 硅达林顿晶体管 开关 晶体管 达林顿晶体管 |
| 文件： | 总6页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
KSH122 / KSH122I
NPN Silicon Darlington Transistor
Description
Features
Designed for general-purpose power and switching, such
as output or driver stages in applications.
• D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I ” Suffix)
• Electrically Similar to Popular TIP122
• Complement to KSH127
Applications
• Switching Regulators
• Converters
• Power Amplifiers
Equivalent Circuit
C
B
D-PAK
I-PAK
1
1
R1
R2
1.Base 2.Collector 3.Emitter
E
R1 8k
R2 0.12k
Ordering Information
Part Number
KSH122TF
Top Mark
KSH122
Package
Packing Method
Tape and Reel
Tape and Reel
Rail
TO-252 3L (DPAK)
TO-252 3L (DPAK)
TO-251 3L (IPAK)
KSH122TM
KSH122ITU
KSH122
KSH122-I
© 1999 Semiconductor Components Industries, LLC.
October-2017,Rev. 3
Publication Order Number:
KSH122/D
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
100
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
100
V
5
V
8
A
ICP
16
A
IB
120
mA
Collector Dissipation (TC=25C)
Collector Dissipation (TA=25C)
Junction Temperature
20.00
1.75
150
PC
W
TJ
C
C
TSTG
Storage Temperature
- 65 to 150
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
IC = 30 mA, IB = 0
Min.
Typ.
Max.
Unit
Collector-Emitter Sustaining
Voltage(1)
VCEO(sus)
100
V
ICEO
ICBO
IEBO
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
VCE = 50 V, IB =0
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
VCE = 4 V, IC = 4 A
10
10
A
A
2
mA
1000
100
12000
hFE
DC Current Gain(1)
VCE = 4 V, IC = 8 A
IC = 4 A, IB = 16 mA
IC = 8 A, IB = 80 mA
2
4
Collector-Emitter Saturation
Voltage(1)
VCE(sat)
V
V
BE(sat) Base-Emitter Saturation Voltage(1) IC = 8 A, IB = 80 mA
4.5
2.8
200
V
V
VBE(on) Base-Emitter On Voltage(1)
Cob Output Capacitance
Note:
1. Pulse test: pw300 s, duty cycle 2%.
VCE = 4 V, IC = 4 A
VCB = 10 V, IE = 0, f = 0.1 MHz
pF
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2
Typical Performance Characteristics
10
10k
IC = 250 IB
VCE = 4V
VBE(sat)
VCE(sat)
1
1k
0.1
0.01
0.1
100
0.1
1
10
100
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
10
VCC= 30V
IC=250IB
IB1=-IB2
1
tR
tD, VBE(off)=0
0.1
1
0.1
0.01
1
10
100
0.1
1
10
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn-On Time
100
10
VCC=30V
IC=250IB
1
0
0
10
1
s
5
0
0
tSTG
s
tF
1
0.1
0.01
0.1
0.1
1
10
100
1000
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Turn-Off Time
Figure 6. Safe Operating Area
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3
Typical Performance Characteristics (Continued)
25
20
15
10
5
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
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4
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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