KSH112TM [ROCHESTER]
2A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, LEAD FREE, DPAK-3;
| 型号： | KSH112TM |
| 厂家： | 
Rochester Electronics |
| 描述： | 2A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, LEAD FREE, DPAK-3 晶体管 |
| 文件： | 总9页 (文件大小：869K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSH112
D-PAK for Surface Mount Applications
•
•
•
•
•
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
Electrically Similar to Popular TIP112
D-PAK
I-PAK
1
1
1.Base 2.Collector 3.Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Equivalent Circuit
C
Symbol
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Value
Units
V
V
V
100
V
CBO
CEO
EBO
100
V
B
5
V
I
I
I
2
4
A
C
A
CP
B
50
mA
W
R1
R2
P
Collector Dissipation (T =25°C)
20
C
C
E
R1 10 k Ω
R2 0.6 kΩ
Collector Dissipation (T =25°C)
1.75
150
W
a
T
T
Junction Temperature
Storage Temperature
°C
°C
J
- 65 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Test Condition
Min.
Max.
Units
V
V
(sus)
I
= 30mA, I = 0
100
CEO
CEO
CBO
EBO
C
B
I
I
I
V
V
V
= 50V, I = 0
20
20
2
µA
CE
CB
EB
B
= 100V, I = 0
µA
B
= 5V, I = 0
mA
C
h
* DC Current Gain
V
V
V
= 3V, I = 0.5A
500
1000
200
FE
CE
CE
CE
C
= 3V, I = 2A
12K
C
= 3V, I = 4A
C
V
(sat)
* Collector-Emitter Saturation Voltage
I
I
= 2A, I = 8mA
2
3
V
V
CE
C
C
B
= 4A, I = 40mA
B
V
V
(sat)
(on)
* Base-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I
= 4A, I = 40mA
4
V
V
BE
BE
C
B
V
V
V
= 3A, I = 2A
2.8
CE
CE
CB
C
f
= 10V, I = 0.75A
25
MHz
pF
T
C
C
= 10V, I = 0
100
ob
E
f = 0.1MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
Typical Characteristics
10000
1000
100
10
IC = 250 IB
VCE = 3V
VBE(sat)
VCE(sat)
1
0.1
10
0.01
0.01
0.01
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
VCC=30V
IC=250IB
100
10
1
1
tR
tD
0.1
0.01
0.1
1
10
100
0.1
1
10
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
10
10
VCC=30V
IC=250IB
tSTG
1
1
tF
0.1
0.01
0.1
0.01
1
10
100
1000
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
Typical Characteristics (Continued)
25
20
15
10
5
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
Package Dimensions
D-PAK
6.60 ±0.20
5.34 ±0.30
2.30 ±0.10
0.50 ±0.10
(0.50)
(4.34)
(0.50)
MAX0.96
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
2.30TYP
2.30TYP
[2.30±0.20]
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
0.76 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
Package Dimensions(Continued)
I-PAK
2.30 ±0.20
0.50 ±0.10
6.60 ±0.20
5.34 ±0.20
(0.50)
(4.34)
(0.50)
MAX0.96
0.76 ±0.10
0.50 ±0.10
2.30TYP
2.30TYP
[2.30±0.20]
[2.30±0.20]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™ FRFET™
DOME™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
GTO™
HiSeC™
I2C™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
QT Optoelectronics™ TinyLogic™
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
|
Careers Sitema
Go
TECHNICAL INFORMATION
DESIGN CENTER
SUPPORT
COMPANY
INVESTORS
MY FA
DATASHEETS, SAMPLES, BUY
APPLICATIONS
Home >> Find products >>
Related Links
KSH112
NPN Silicon Darlington Transistor
Request samples
How to order products
Contents
•Features
•Qualification Support
Product Change Notices
(PCNs)
•Applications
Datasheet
•Product status/pricing/packaging
•Order Samples
Download this
datasheet
Support
Sales support
Quality and reliability
Design center
Features
z
z
z
z
z
High DC Current Gain
e-mail this datasheet
Built-in a Damper Diode at E-C
Lead Formed for surface Mount Applications (No Suffix)
Straight Lead (I-PAK, "-I" Suffix)
Electrically Similar to Popular TIP112
This page
Print version
back to top
Applications
D-PAK for Surface Mount
back to top
Product status/pricing/packaging
Product
Product status Pb-free Status Pricing* Package type Leads Packing method
Package Marking Convention**
KSH112GTM_SB82051
Full Production
N/A TO-252(DPAK)
2
TAPE REEL
Line 1: KSH Line 2: 112 Line 3: &3
KSH112TF
Full Production
$0.432 TO-252(DPAK)
2
TAPE REEL
Line 1: KSH Line 2: 112 Line 3: &3
KSH112TM
Full Production
$0.432 TO-252(DPAK)
2
TAPE REEL
Line 1: KSH Line 2: 112 Line 3: &3
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please
contact a Fairchild distributor to obtain samples
Indicates product with Pb-free second-level interconnect. For more information click here.
Package marking information for product KSH112 is available. Click here for more information .
back to top
Qualification Support
Click on a product for detailed qualification data
Product
KSH112GTM_SB82051
KSH112TF
KSH112TM
back to top
© 2007 Fairchild Semiconductor
Products | Design Center | Support | Company News | Investors | My Fairchild | Contact Us | Site Index | Privacy Policy | Site Terms & Conditions | Standard Terms & Conditions o
相关型号：
KSH117-TF
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
SAMSUNG
KSH117ITU
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3
FAIRCHILD
KSH117TF
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明