KSC5027OTU [ROCHESTER]

3A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN;
KSC5027OTU
型号: KSC5027OTU
厂家: Rochester Electronics    Rochester Electronics
描述:

3A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN

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KSC5027  
High Voltage and High Reliability  
High Speed Switching  
Wide SOA  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
1100  
V
V
CBO  
CEO  
EBO  
800  
7
V
I
I
3
10  
A
C
A
CP  
B
I
1.5  
A
P
Collector Dissipation ( T =25°C)  
50  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Sustaining Voltage  
I
I
I
= 1mA, I = 0  
1100  
800  
7
V
V
V
V
CBO  
CEO  
EBO  
C
C
E
E
BV  
BV  
= 5mA, I = 0  
B
= 1mA, I = 0  
C
V
(sus)  
I = 1.5A, I = -I = 0.3A  
800  
CEX  
C
B1  
B2  
L = 2mH, Clamped  
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
V
V
= 800V, I = 0  
10  
10  
40  
µA  
µA  
CBO  
EBO  
CB  
EB  
E
= 5V, I = 0  
C
h
h
V
V
= 5V, I = 0.2A  
10  
8
FE1  
FE2  
CE  
CE  
C
= 5V, I = 1A  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Output Capacitance  
I
I
= 1.5A, I = 0.3A  
2
V
V
CE  
C
C
B
= 1.5A, I = 0.3A  
1.5  
BE  
B
C
V
= 10V, I = 0, f = 1MHz  
60  
15  
pF  
MHz  
µs  
ob  
CB  
E
f
t
t
t
Current Gain Bandwidth Product  
Turn ON Time  
V
V
I
= 10V, I = 0.2A  
T
CE  
C
= 400V  
0.5  
3
ON  
CC  
= 5I = -2.5I = 2A  
Storage Time  
C
B1 B2  
µs  
STG  
F
R = 200Ω  
L
Fall Time  
0.3  
µs  
h
Classification  
FE  
Classification  
N
R
O
h
10 ~ 20  
15 ~ 30  
20 ~ 40  
FE1  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
1000  
100  
10  
VCE = 5V  
IB = 250mA  
IB = 200mA  
IB = 150mA  
IB = 100mA  
IB = 80mA  
IB = 60mA  
IB = 50mA  
IB = 40mA  
IB = 30mA  
IB = 20mA  
IB = 10mA  
IB = 0  
1
0.01  
0
1
2
3
4
5
6
7
8
9
10  
0.1  
1
10  
IC[A], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
10  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
IC = 5 IB  
VCE = 5V  
VBE(sat)  
1
VCE(sat)  
0.1  
0.01  
0.01  
0.1  
1
10  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VBE[V], BASE-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 3. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter On Voltage  
100  
10  
10  
VCC = 400V  
5.IB1 = -2.5.IB2 = IC  
tSTG  
ICMAX.(Pulse)  
ICMAX(Continuous)  
1
1
tON  
tF  
0.1  
0.1  
0.01  
1E-3  
0.01  
0.1  
1
10  
1
10  
100  
1000  
10000  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 5. Switching Time  
Figure 6. Safe Operating Area  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics (Continued)  
100  
80  
70  
60  
50  
40  
30  
20  
10  
0
IB2 = -0.3A  
10  
1
0.1  
0.01  
10  
100  
1000  
10000  
0
25  
50  
75  
100  
125  
150  
175  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
TC[oC], CASE TEMPERATURE  
Figure 7. Reverse Bias Operating Area  
Figure 8. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Package Demensions  
TO-220  
4.50 ±0.20  
9.90 ±0.20  
(8.70)  
+0.10  
1.30  
–0.05  
ø3.60 ±0.10  
(45  
°
)
1.27 ±0.10  
1.52 ±0.10  
0.80 ±0.10  
+0.10  
–0.05  
0.50  
2.40 ±0.20  
2.54TYP  
2.54TYP  
[2.54 ±0.20  
]
[2.54 ±0.20]  
10.00 ±0.20  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
POP™  
STAR*POWER™  
Stealth™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  
Product Folder - Fairchild P/N KSC5027 - NPN Silicon Transistor  
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KSC5027R  
Product status  
Pricing*  
$0.62  
Package type Leads  
Packing method  
BULK  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
TO-220  
TO-220  
TO-220  
TO-220  
TO-220  
TO-220  
3
3
3
3
3
3
KSC5027O  
$0.62  
$0.62  
$0.62  
$0.62  
$0.62  
BULK  
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my Fairchild  
KSC5027OTU  
KSC5027ON  
KSC5027RTU  
KSC5027RHTU  
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* 1,000 piece Budgetary Pricing  
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Models  
Package & leads  
PSPICE  
Condition  
Temperature range Software version Revision date  
Electrical/Thermal  
TO-220-3  
-25°C to 100°C  
9.2  
Mar 16, 2001  
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