KSC5029OTU [FAIRCHILD]

Power Bipolar Transistor, 4.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN;
KSC5029OTU
型号: KSC5029OTU
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Power Bipolar Transistor, 4.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

局域网 开关 晶体管
文件: 总6页 (文件大小:87K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KSC5029  
High Voltage and High Reliabilty  
High Speed Switching  
Wide SOA  
TO-3P  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
1100  
V
V
CBO  
CEO  
EBO  
800  
V
7
V
I
I
I
4.5  
A
C
15  
A
CP  
B
2
90  
A
P
T
T
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Sustaining Voltage  
I
I
= 1mA, I = 0  
1100  
800  
7
V
V
V
V
CBO  
CEO  
EBO  
C
C
E
BV  
BV  
= 5mA, I = 0  
B
I = 1mA, I = 0  
E
C
V
(sus)  
I
= 2A, I = -I = 0.4A  
800  
CEX  
C
B1  
B2  
L = 2mH, Clamped  
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
V
V
= 800V, I = 0  
10  
10  
40  
µA  
µA  
CBO  
EBO  
CB  
EB  
E
= 5V, I = 0  
C
h
h
V
V
= 5V, I = 0.3A  
10  
8
FE1  
FE2  
CE  
CE  
C
= 5V, I = 1.5A  
C
V
V
(Sat)  
(Sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Output Capacitance  
I
I
= 2A, I = 0.4A  
2
V
V
CE  
C
C
B
= 2A, I = 0.4A  
1.5  
BE  
B
C
V
= 10V, IE = 0, f = 1MHz  
90  
15  
pF  
MHz  
µs  
ob  
CB  
f
t
t
t
Current Gain Bandwidth Product  
Turn ON Time  
V
V
I
= 10V, I = 0.3A  
T
CE  
CC  
C
= 400V  
0.5  
3
ON  
= 51 = -2.5I = 3A  
Storage Time  
C
B1 B2  
µs  
STG  
F
R = 133Ω  
L
Fall Time  
0.3  
µs  
h
Classificntion  
FE  
Classification  
N
R
O
h
10 ~ 20  
15 ~ 30  
20 ~ 40  
FE1  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1000  
100  
10  
IB = 800mA  
IB = 600mA  
VCE = 5V  
IB = 500mA  
IB = 400mA  
IB = 300mA  
IB = 200mA  
IB = 150mA  
IB = 100mA  
IB = 50mA  
IB = 20mA  
IB = 0  
1
0.01  
0
1
2
3
4
5
6
7
8
9
10  
0.1  
1
10  
IC[A], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
10  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
IC = 5 IB  
VCE = 5V  
VBE(sat)  
1
VCE(sat)  
0.1  
0.01  
0.01  
0.1  
1
10  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
IC[A], COLLECTOR CURRENT  
VBE[V], BASE-EMITTER VOLTAGE  
Figure 3. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter On Voltage  
100  
10  
10  
ICMAX.(Pulse)  
ICMAX  
tSTG  
1
tON  
1
tF  
0.1  
0.1  
0.01  
0.01  
0.1  
1
10  
100  
1000  
1
10  
IC[A], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Switching Time  
Figure 6. Safe Operating Area  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics (Continued)  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
IB2 = -0.4A  
L=200uH  
10  
1
0.1  
0.01  
0
25  
50  
75  
100  
125  
150  
175  
10  
100  
1000  
10000  
TC[oC], CASE TEMPERATURE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 7. Reverse Bias Safe Operating Area  
Figure 8. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Package Demensions  
TO-3P  
15.60 ±0.20  
4.80 ±0.20  
13.60 ±0.20  
9.60 ±0.20  
+0.15  
ø3.20 ±0.10  
1.50  
–0.05  
2.00 ±0.20  
3.00 ±0.20  
1.00 ±0.20  
1.40 ±0.20  
+0.15  
–0.05  
0.60  
5.45TYP  
5.45TYP  
[5.45 ±0.30  
]
[5.45 ±0.30]  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
POP™  
STAR*POWER™  
Stealth™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  
Product Folder - Fairchild P/N KSC5029 - NPN Silicon Transistor  
SEARCH | Parametric | Cross Reference  
sp  
Fairchild Semiconductor  
GO  
space  
Product Folders and  
Applica  
spa  
sp
a
s
pa  
Home >> Find products >>  
find products  
spa  
sp
a
s
pa  
KSC5029  
Related Links  
Products groups  
NPN Silicon Transistor  
Analog and Mixed  
Signal  
Discrete  
Interface  
Logic  
Microcontrollers  
Non-Volatile  
Memory  
Optoelectronics  
Markets and  
applications  
New products  
Product selection and  
parametric search  
Cross-reference  
search  
Request samples  
Dotted line  
Datasheet  
Download this  
datasheet  
Contents  
Features | Applications | Product  
status/pricing/packaging  
How to order products  
Dotted line  
Product Change Notices  
(PCNs)  
PDF  
Dotted line  
Support  
Features  
e-mail this datasheet  
[E-  
Dotted line  
Distributor and field sales  
representatives  
High Speed Switching  
Wide SOA  
Dotted line  
Quality and reliability  
This pagePrint version  
Dotted line  
Design tools  
back to top  
Applications  
technical information  
buy products  
High Voltage and High Reliability  
technical support  
my Fairchild  
back to top  
Product status/pricing/packaging  
company  
Product  
KSC5029RTU  
KSC5029OTU  
Product status  
Full Production  
Full Production  
Pricing*  
Package type  
TO-3P  
Leads  
Packing method  
RAIL  
$1.18  
$1.18  
3
3
TO-3P  
RAIL  
* 1,000 piece Budgetary Pricing  
back to top  
Home | Find products | Technical information | Buy products |  
Support | Company | Contact us | Site index | Privacy policy  
© Copyright 2002 Fairchild Semiconductor  

相关型号:

KSC5030

NPN (HIGH VOLTAGE AND HIGH RELIABILITY)
SAMSUNG

KSC5030

High Voltage and High Reliabilty
FAIRCHILD

KSC5030-N

Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
SAMSUNG

KSC5030-O

Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
SAMSUNG

KSC5030F

High Voltage and High Reliability
FAIRCHILD

KSC5030F

isc Silicon NPN Power Transistor
ISC

KSC5030F-R

Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN
SAMSUNG

KSC5030FO

暂无描述
FAIRCHILD

KSC5030FOTU

Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN
FAIRCHILD

KSC5030FRTU

High Voltage Fast Switching Transistor
FAIRCHILD

KSC5030FTBTU

暂无描述
FAIRCHILD

KSC5030F_05

High Voltage Fast Switching Transistor
FAIRCHILD