BC489AZL1G [ROCHESTER]
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| 型号： | BC489AZL1G |
| 厂家： | 
Rochester Electronics |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC489, A, B
High Current Transistors
NPN Silicon
Features
http://onsemi.com
• Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
2
BASE
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
80
Vdc
Collector−Base Voltage
80
5.0
0.5
Vdc
Vdc
Adc
3
EMITTER
Collector−Emitter Voltage
Collector Current − Continuous
I
C
Total Power Dissipation @ T = 25°C
P
625
5.0
mW
mW/°C
A
D
Derate above T = 25°C
A
Total Power Dissipation @ T = 25°C
P
1.5
12
W
mW/°C
A
D
Derate above T = 25°C
A
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
TO−92
CASE 29
STYLE 17
THERMAL CHARACTERISTICS
Characteristic
1
Symbol
Max
200
Unit
°C/W
°C/W
2
3
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
JC
R
q
83.3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MARKING DIAGRAM
BC
489x
AYWW G
G
BC489x = Device Code
x = A or B
A
= Assembly Location
Y
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 2
BC489/D
BC489, A, B
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1)
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 10 mAdc, I = 0)
80
−
−
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
80
−
−
−
−
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
5.0
Vdc
E
C
Collector Cutoff Current
(V = 60 V, I = 0)
I
nAdc
CBO
−
−
100
CB
E
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 10 mAdc, V = 2.0 Vdc)
40
60
100
160
15
−
−
160
260
−
−
C
CE
CE
(I = 100 mAdc, V = 2.0 Vdc)
C
BC489
BC489A
BC489B
400
250
400
−
(I = 1.0 Adc, V = 5.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
V
Vdc
Vdc
CE(sat)
BE(sat)
−
−
0.2
0.3
0.5
−
C
B
(I = 1.0 Adc, I = 100 mAdc)
C
B
Collector−Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
V
−
−
0.85
0.9
1.2
−
C
B
(I = 1.0 Adc, I = 100 mAdc) (Note 1)
C
B
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
f
−
−
−
200
7.0
50
−
−
−
MHz
pF
T
(I = 50 mAdc, V = 2.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
ob
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
pF
ib
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
EB
C
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
TURN−ON TIME
V
TURN−OFF TIME
+V
V
BB
−1.0 V
CC
CC
+40 V
+40 V
5.0 ms
100
R
100
R
L
L
+10 V
0
OUTPUT
OUTPUT
R
R
V
in
V
in
B
B
5.0 mF
5.0 mF
t = 3.0 ns
r
100
100
*C < 6.0 pF
S
*C < 6.0 pF
S
5.0 ms
t = 3.0 ns
r
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
http://onsemi.com
2
BC489, A, B
300
200
80
60
T = 25°C
J
V
= 2.0 V
CE
T = 25°C
J
40
C
ibo
20
100
70
50
10
8.0
6.0
C
obo
30
4.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Current−Gain — Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
t
s
300
200
100
70
50
t
f
V
I /I = 10
= 40 V
CC
30
20
t
r
C
B
I = I
B1 B2
t @ V
d
= 0.5 V
BE(off)
T = 25°C
J
10
5.0 7.0 10
20 30
50
500
70 100
200 300
I , COLLECTOR CURRENT (mA)
C
Figure 4. Switching Time
1.0
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
P
(pk)
t
1
0.02
0.1
0.07
0.05
t
2
0.01
DUTY CYCLE, D = t /t
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
1
2
SINGLE PULSE
READ TIME AT t (SEE AN−469)
1
0.03
0.02
SINGLE PULSE
T
J(pk)
T
J(pk)
− T = P Z
(pk) qJC(t)
C
Z
Z
= r(t) • R
q
q
q
JC(t)
JC
− T = P
A
Z
(pk) qJA(t)
= r(t) • R
q
JA
JA(t)
0.01
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢂk 2.0ꢂk
5.0ꢂk
10ꢂk
20ꢂk
100ꢂk
50ꢂk
t, TIME (ms)
Figure 5. Thermal Response
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3
BC489, A, B
1.0 k
700
100 ms
1.0 ms
500
1.0 s
= 25°C
300
200
T
C
T
A
= 25°C
100
70
50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
30
20
BC489
10
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 6. Active Region — Safe Operating Area
400
200
T =125°C
J
V
= 1.0 V
CE
25°C
−55°C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
I , COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
1.0
1.0
0.8
T = 25°C
J
T = 25°C
J
0.8
V
@ I /I = 10
C B
BE(sat)
50
mA
I
C
= 10 mA
100 mA
250 mA
500 mA
0.6
0.4
0.2
0
0.6
0.4
0.2
0
V
@ V = 1.0 V
CE
BE(on)
V
@ I /I = 10
C B
CE(sat)
0.5 1.0
2.0
5.0
10
20
50
100 200
500
0.05 0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 8. “On” Voltages
Figure 9. Collector Saturation Region
http://onsemi.com
4
BC489, A, B
−1.0
−0.8
−0.8
−1.2
T = 25°C
J
V
@ I /I = 10
B
BE(sat)
C
−0.6
−1.6
−2.0
V
@ V = −1.0 V
CE
BE(on)
R
for V
BE
q
VB
−0.4
−0.2
0
−2.4
−2.8
V
@ I /I = 10
C B
CE(sat)
0.5
1.0 2.0
5.0
10
20
50
100 200
500
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200 −500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 10. Base−Emitter Temperature Coefficient
Figure 11. “On” Voltages
−1.0
−0.8
−0.6
−0.4
−0.2
0
−0.8
T = 25°C
J
−1.2
−1.6
−2.0
−2.4
−2.8
R
for V
q
VB
BE
I
C
= −10 mA
−50 mA −100 mA
−250 mA −500 mA
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200 −500
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 12. Collector Saturation Region
Figure 13. Base−Emitter Temperature Coefficient
ORDERING INFORMATION
†
Device Order Number
Package Type
Shipping
BC489
TO−92
5000 Units / Bulk
5000 Units / Bulk
BC489G
TO−92
(Pb−Free)
BC489RL1
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
BC489RL1G
TO−92
(Pb−Free)
BC489A
TO−92
5000 Units / Bulk
5000 Units / Bulk
BC489AG
TO−92
(Pb−Free)
BC489AZL1
TO−92
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
BC489AZL1G
TO−92
(Pb−Free)
BC489BZL1
TO−92
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
BC489BZL1G
TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
BC489, A, B
PACKAGE DIMENSIONS
TO−92 (TO−226AA)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
SEATING
PLANE
INCHES
DIM MIN MAX
MILLIMETERS
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.205
0.210
0.165
0.021
0.055
0.105
0.020
D
X X
G
J
H
V
K
L
−−− 12.70
−−−
0.105
6.35
2.04
−−−
−−−
C
N
P
R
V
2.66
2.54
−−−
−−− 0.100
SECTION X−X
0.115
0.135
−−−
−−−
2.93
3.43
1
N
−−−
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BC489/D
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