BC489BRLRB [MOTOROLA]
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| 型号： | BC489BRLRB |
| 厂家： | 
MOTOROLA |
| 描述： | 暂无描述 晶体 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by BC489/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
2
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
Unit
Vdc
Vdc
Vdc
Adc
3
V
CEO
V
CBO
V
EBO
80
80
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
5.0
0.5
Collector Current — Continuous
I
C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
V
V
80
80
5.0
—
—
—
—
—
—
—
Vdc
Vdc
(BR)CEO
(I = 10 mAdc, I = 0)
C
B
Collector–Base Breakdown Voltage
(I = 100 Adc, I = 0)
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = 10 Adc, I = 0)
V
—
Vdc
(BR)EBO
E
C
Collector Cutoff Current
(V = 60 Vdc, I = 0)
I
100
nAdc
CBO
CB
E
ON CHARACTERISTICS*
DC Current Gain
h
FE
—
(I = 10 mAdc, V
= 2.0 Vdc)
= 2.0 Vdc)
40
60
100
160
15
—
—
160
260
—
—
C
CE
(I = 100 mAdc, V
CE
BC489
BC489A
BC489B
400
250
400
—
C
(I = 1.0 Adc, V
C CE
= 5.0 Vdc)*
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
ON CHARACTERISTICS* (Continued)
Collector–Emitter Saturation Voltage
Symbol
Min
Typ
Max
Unit
V
Vdc
CE(sat)
(I = 500 mAdc, I = 50 mAdc)
—
—
0.2
0.3
0.5
—
C
C
B
(I = 1.0 Adc, I = 100 mAdc)
B
Base–Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
V
Vdc
BE(sat)
—
—
0.85
0.9
1.2
—
C
B
(1)
(I = 1.0 Adc, I = 100 mAdc)
C
B
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
—
—
—
200
7.0
50
—
—
—
MHz
pF
T
(I = 50 mAdc, V
C CE
= 2.0 Vdc, f = 100 MHz)
Output Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
C
ob
CB
Input Capacitance
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
E
C
pF
ib
EB
C
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
TURN–ON TIME
TURN–OFF TIME
+V
BB
V
V
–1.0 V
100
CC
+40 V
CC
+40 V
5.0 µs
R
100
R
L
L
+10 V
0
OUTPUT
OUTPUT
R
R
B
V
V
in
B
in
5.0
µF
5.0 µF
t = 3.0 ns
r
100
100
*C < 6.0 pF
*C < 6.0 pF
S
S
5.0
µs
t = 3.0 ns
r
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
300
200
80
60
T
= 25°C
J
V
T
= 2.0 V
CE
= 25
°C
J
40
C
ibo
20
100
70
50
10
8.0
6.0
C
obo
30
2.0 3.0
4.0
0.1
5.0 7.0 10
20
30
50 70 100
200
0.2
0.5
1.0
V , REVERSE VOLTAGE (VOLTS)
R
2.0
5.0
10
20
50
100
I
, COLLECTOR CURRENT (mA)
C
Figure 2. Current–Gain — Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
t
s
300
200
100
70
50
t
f
V
= 40 V
/I = 10
CC
30
20
t
r
I
I
T
C B
= I
B1 B2
= 25
t
@ V
30
= 0.5 V
°C
d
BE(off)
J
10
5.0 7.0 10
20
50
500
70 100
200 300
I
, COLLECTOR CURRENT (mA)
C
Figure 4. Switching Time
1.0
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
P
(pk)
t
1
0.02
0.1
0.07
0.05
t
2
0.01
DUTY CYCLE, D = t /t
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
1 2
SINGLE PULSE
0.03
0.02
SINGLE PULSE
READ TIME AT t (SEE AN–469)
1
(pk)
(pk)
Z
Z
= r(t)
= r(t)
•
•
R
θ
θ
JC(t)
JA(t)
θ
JC
JA
T
T
– T = P
Z
Z
θ
J(pk)
J(pk)
C
θJC(t)
R
θ
– T = P
A
JA(t)
50 k
0.01
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
100 k
t, TIME (ms)
Figure 5. Thermal Response
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
1.0 k
100
1.0 ms
µs
700
500
1.0 s
300
200
T
= 25°C
C
T
= 25°C
A
100
70
50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
30
20
BC489
20 30
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
1.0
2.0 3.0
5.0 7.0 10
50 70 100
V
CE
Figure 6. Active Region — Safe Operating Area
400
200
T
=125°C
J
V
= 1.0 V
CE
25°C
–55°C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
I
, COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
1.0
1.0
0.8
T
= 25°C
J
T
= 25°C
J
0.8
0.6
0.4
V
@ I /I = 10
C B
BE(sat)
50
mA
I
= 10 mA
100 mA
250 mA
500 mA
C
0.6
0.4
V
@ V = 1.0 V
CE
BE(on)
0.2
0
0.2
0
V
@ I /I = 10
C B
CE(sat)
0.5
1.0
2.0
5.0
10
20
50
100 200
500
0.05 0.1
0.2
0.5
I , COLLECTOR CURRENT (mA)
C
1.0
2.0
5.0
10
20
50
I
, COLLECTOR CURRENT (mA)
C
Figure 8. “On” Voltages
Figure 9. Collector Saturation Region
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–0.8
–1.2
–1.0
–0.8
T
= 25°C
J
V
@ I /I = 10
C B
BE(sat)
–1.6
–2.0
–0.6
V
@ V = –1.0 V
CE
BE(on)
R
for V
VB BE
θ
–0.4
–0.2
0
–2.4
–2.8
V
@ I /I = 10
C B
CE(sat)
0.5
1.0
2.0
5.0
10
20
50
100
200
500
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100 –200 –500
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 10. Base–Emitter Temperature Coefficient
Figure 11. “On” Voltages
–1.0
–0.8
–0.6
–0.8
T
= 25°C
J
–1.2
–1.6
–2.0
R
for V
BE
θ
VB
–0.4
–0.2
0
I
= –10 mA
–50 mA –100 mA
–250 mA –500 mA
C
–2.4
–2.8
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10
–20
–50
–0.5 –1.0 –2.0
–5.0
–10
–20
–50
–100 –200
–500
I
, BASE CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
B
Figure 12. Collector Saturation Region
Figure 13. Base–Emitter Temperature Coefficient
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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BC489/D
◊
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