RFRX1702TR7 [RFMD]
GaAs MMIC IQ Downconverter 17.7GHz to 19.7GHz;型号: | RFRX1702TR7 |
厂家: | RF MICRO DEVICES |
描述: | GaAs MMIC IQ Downconverter 17.7GHz to 19.7GHz |
文件: | 总7页 (文件大小:1118K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RFRX1702
RFRX1702
GaAs MMIC IQ Downconverter
17.7GHz to 19.7GHz
Package: QFN, 32-pin,
5mm x 5mm x 0.95mm
RFMD's RFRX1702 is a 17.7GHz to 19.7GHz GaAs pHEMT
Downconverter, incorporating a low-noise amplifier, an integrated X2 LO
frequency multiplier and buffer amplifier, and an image rejection mixer. The
combination of high performance part and low cost packaging makes the
RFRX1702 a cost effective solution, ideally suited to both current and next
generation Point-to-Point Microwave Radio and Satellite Applications.
RFRX1702 is packaged in a 5mm x 5mm QFN to simplify both system level
board design and volume assembly.
Features
■
RF Frequency: 17.7GHz to
19.7GHz
■
LO Frequency: 6.85GHz to
11.85GHz
■
■
■
■
■
■
IF Frequency: DC to 4GHz
Conversion Gain: 12dB
Noise Figure: 2dB
IIP3: 6dBm
Image Rejection: 15dBc
Low Cost 5mm x 5mm QFN
Package
Applications
■
■
■
■
■
Point-to-Point Radio
Point-Multipoint Radio
Satellite Communications
Radar
Electronic Warfare
Functional Block Diagram
Ordering Information
RFRX1702S2
RFRX1702SB
RFRX1702SQ
RFRX1702SR
RFRX1702TR7
Sample bag with 2 pieces
Bag with 5 pieces
Bag with 25 pieces
100 Pieces
7" Reel with 750 pieces
RFRX1702PCBA-410 Evaluation board
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131025
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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RFRX1702
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Rating
Unit
V
LNA Drain Voltage
LOA Drain Voltage
RF Input Power
LO Input Power
TOPER
6
6
V
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
10
dBm
dBm
°C
15
-40 to +85
-65 to +150
Class 1A
TSTOR
°C
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
ESD Human Body Model
Nominal Operating Parameters
Specification
Parameter
Unit Condition
Min
Typ
Max
General Performance
RF Frequency
LO Frequency
IF Frequency
LO Input Drive
Conversion Gain
NF (17.7GHz to 19.7GHz)
IIP3
17.7
6.85
DC
19.7
11.85
4.0
GHz
GHz
GHz
dBm
dB
+5
13
2
6
dB
dBm
dB
Image Rejection
LO-RF Isolation
LO-IF Isolation
LO Return Loss
RF Return Loss
VD
15
40
dB
15
dB
12
dB
12
dB
2.8 to 4.5
350
V
ID
mA
NOTES: Measurements performed on part soldered on evaluation board with SMA connectors and IF ports connected to an external 90° Hybrid Combiner
and LO Power of +5dBm and at 25°C, unless otherwise stated.
IF = 2.5GHz, RF Power = -20dBm, IIP3 is measured with a 2-tone input of -23dBm power for each tone and Δf = 10MHz, Vd1 = 2.8V, Vd2 = 4V, Vd3
through Vd5 = 4.5V, MixerBias = 0V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131025
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFRX1702
Typical Electrical Performance
Measurements performed on part soldered on evaluation board with SMA connectors and IF ports
connected to an external 90° Hybrid Combiner and LO Power of +5dBm and at 25°C, unless otherwise
stated.
IF = 2.5GHz, RF Power = -20dBm, IIP3 is measured with a 2-tone input of -23dBm power for each tone and
Δf = 10MHz, Vd1 = 2.8V, Vd2 = 4V, Vd3 through Vd5 = 4.5V, MixerBias = 0V.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131025
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFRX1702
Typical Electrical Performance (continued)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131025
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFRX1702
Pin Out
Pin Names and Descriptions
Pin
1-4
5
Name
N/C
Description
Not Connected
Ground
GND
RF
6
RF Input, AC coupled and matched to 50Ω
Ground
7
GND
N/C
8-9
10
11
12
13
14
15
16
17
18
19
20-24
25
26
27
28
29
30
31
32
Not Connected
GND
IF1
Ground
IF1 Output
GND
IF2
Ground
IF2 Output
GND
Mixer Bias
N/C
Ground
Mixer Bias = 0V
Not Connected
GND
LO
Ground
LO Input, AC coupled and matched to 50Ω
Ground
GND
N/C
Not Connected
Vd5
Vd5 (LOA bias) = 4.5V
Vd4 (LOA bias) = 4.5V
Not Connected
Vd4
N/C
Vd3
Vd3 (LOA bias) = 4.5V
Not Connected
N/C
Vd2
LNA drain bias2 = 4V
Not Connected
N/C
Vd1
LNA drain bias1 = 2.8V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131025
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFRX1702
Package Outline Drawing (Dimensions in millimeters)
Application Circuit Block Diagram
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131025
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFRX1702
Evaluation Board Layout
Test Conditions
LO Power
RF Power
Vd1
+5dBm
-20dBm
2.8V
Vd2
4.0V
Vd3, Vd4, Vd5
Mixer Bias
4.5V
0V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131025
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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