UPC4570GR(5)-9LG-E2-A [RENESAS]
IC,OP-AMP,DUAL,BIPOLAR,TSSOP,8PIN,PLASTIC;
| 型号： | UPC4570GR(5)-9LG-E2-A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | IC,OP-AMP,DUAL,BIPOLAR,TSSOP,8PIN,PLASTIC |
| 文件： | 总12页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
μPC4570GR-9LG
ULTRA LOW-NOISE, WIDEBAND, DUAL OPERATIONAL AMPLIFIER
DESCRIPTION
The μPC4570GR-9LG is an ultra low-noise, wideband high slew-rate, dual operational amplifier. Input equivalent noise is
three times better than the conventional 4558 type op-amps. The gain bandwidth products and the slew-rate are seven
times better than 4558. In spite of fast AC performance, the μPC4570GR-9LG is extremely stable under voltage-follower
circuit conditions. Supply current is also improved compared with conventional wideband op-amps. The μPC4570GR-9LG
is an excellent choice for pre-amplifiers and active filters in audio, instrumentation, and communication circuits.
FEATURES
• Ultra low noise : en = 4.5 nV/√Hz
• High slew rate : 7 V/μs
• High gain bandwidth product : GBW = 15 MHz at 100 kHz
• Internal frequency compensation
ORDERING INFORMATION
Part Number
μPC4570GR-9LG-A
μPC4570GR(5)-9LG-A
Package
8-pin plastic TSSOP (5.72 mm (225))
8-pin plastic TSSOP (5.72 mm (225))
PIN CONFIGURATION (Top View)
EQUIVALENT CIRCUIT (1/2 Circuit)
+
V
R
1
8 V+
7 OUT
6 II2
Q
7
OUT
1
1
2
3
4
Q
5
Q
14
1
–
+
Q
11
Q
13
I
I1
2
Q
8
R
7
Q
16
2
Q
2
I
I
Q
1
Q
9
+
–
R
8
IN
R
6
I
N1
R
12
9
R
5
C2
Q
15
Q
Q
6
V –
5 IN2
OUT
Q3
Q4
Q
10
D
R
10
R
3
R4
R
2
C
1
V−
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17930EJ1V0DS00
Date Published November 2006 NS CP(N)
Printed in Japan
2006
μPC4570GR-9LG
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Voltage between V+ and V– Note1
Differential Input Voltage
Input Voltage Note2
Symbol
Ratings
–0.3 to +36
30
Unit
V
V+ - V–
VID
V
VI
V––0.3 to V+ +0.3
V––0.3 to V+ +0.3
440
V
Output Voltage Note3
VO
V
Power Dissipation Note4
PT
mW
sec
°C
°C
Output Short Circuit Duration Note5
Operating Ambient Temperature
Storage Temperature
10
TA
–40 to +85
–55 to +125
Tstg
Notes 1. Reverse connection of supply voltage can cause destruction.
2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of
supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the
both inputs are within the Common Mode Input Voltage Range of electrical characteristics.
3. This specification is the voltage which should be allowed to supply to the output terminal from external without
damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification
should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical
characteristics.
4. Power dissipation is specified with mounting on the glass epoxy printed wiring board as follows, and ambient
temperature condition is 44°C or less.
Board size : 100 mm square Thickness : 1.6 mm Cupper area : 15% of mounting area (single side)
Thermal deleting factor is −5.5 mV/°C when operating ambient temperature is higher than 44°C.
5. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note4.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
4
TYP.
MAX.
16
Unit
V
Supply Voltage
Output Current
Source Resistance
V
IO
10
mA
kΩ
pF
RS
CL
50
Capacitive Load (AV = +1)
100
2
Data Sheet G17930EJ1V0DS
μPC4570GR-9LG
μPC4570GR-9LG
ELECTRICAL CHARACTERISTICS (TA = 25°C, V = 15 V)
Parameter
Symbol
VIO
Conditions
RS ≤ 50 Ω
MIN.
TYP.
0.3
MAX.
5
Unit
mV
nA
Input Offset Voltage
Input Offset Current Note6
Input Bias Current Note6
Large Signal Voltage Gain
Supply Current Note7
IIO
10
100
400
IB
100
300,000
5
nA
AV
RL ≥ 2 kΩ , VO = 10 V
30,000
ICC
IO = 0 A
8
mA
dB
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Output Voltage Swing
CMR
SVR
Vom
80
80
12
10
12
5
100
100
13.4
12.8
14
dB
RL ≥ 10 kΩ
RL ≥ 2 kΩ
V
V
Common Mode Input Voltage Range
Slew Rate
VICM
SR
V
RL ≥ 2 kΩ
7
V/μs
MHz
MHz
degree
Gain Bandwidth Product
Unity Gain Frequency
Phase Margin
GBW
funity
fO = 100 kHz
10
15
open loop
7
φunity
open loop
50
Total Harmonic Distortion
THD
VO = 3 Vr.m.s., f = 20 Hz to
20 kHz (Figure1)
RIAA (Figure2)
FLAT+JIS A, RS = 100 Ω
(Figure3)
0.002
0.9
%
Input Equivalent Noise Voltage
Vn
μVr.m.s.
μVr.m.s.
0.53
0.65
Input Equivalent Noise Voltage Density
en
in
fO = 10 Hz, RS = 100 Ω
fO = 1 kHz, RS = 100 Ω
fO = 1 kHz
5.5
4.5
0.7
120
nV/√Hz
nV/√Hz
pA/√Hz
dB
Input Equivalent Noise Current Density
Channel Separation
f = 20 Hz to 20 kHz
Notes 6. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.
7. This current flows irrespective of the existence of use.
3
Data Sheet G17930EJ1V0DS
μPC4570GR-9LG
μPC4570GR(5)-9LG
ELECTRICAL CHARACTERISTICS (TA = 25°C, V = 15 V)
Parameter
Symbol
VIO
Conditions
RS ≤ 50 Ω
MIN.
TYP.
0.3
MAX.
1
Unit
mV
nA
Input Offset Voltage
Input Offset Current Note6
Input Bias Current Note6
Large Signal Voltage Gain
Supply Current Note7
IIO
10
50
IB
100
300,000
5
200
nA
AV
RL ≥ 2 kΩ , VO = 10 V
50,000
ICC
IO = 0 A
7
mA
dB
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Output Voltage Swing
CMR
SVR
Vom
85
85
13
12
13.5
5
100
100
13.4
12.8
14
dB
RL ≥ 10 kΩ
RL ≥ 2 kΩ
V
V
Common Mode Input Voltage Range
Slew Rate
VICM
SR
V
RL ≥ 2 kΩ
7
V/μs
MHz
MHz
degree
Gain Bandwidth Product
Unity Gain Frequency
Phase Margin
GBW
funity
fO = 100 kHz
10
15
open loop
7
φunity
open loop
50
Total Harmonic Distortion
THD
VO = 3 Vr.m.s., f = 20 Hz to
20 kHz (Figure1)
RIAA (Figure2)
FLAT+JIS A, RS = 100 Ω
(Figure3)
0.002
0.9
%
Input Equivalent Noise Voltage
Vn
μVr.m.s.
μVr.m.s.
0.53
0.65
Input Equivalent Noise Voltage Density
en
in
fO = 10 Hz, RS = 100 Ω
fO = 1 kHz, RS = 100 Ω
fO = 1 kHz
5.5
4.5
0.7
120
nV/√Hz
nV/√Hz
pA/√Hz
dB
Input Equivalent Noise Current Density
Channel Separation
f = 20 Hz to 20 kHz
Notes 6. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.
7. This current flows irrespective of the existence of use.
4
Data Sheet G17930EJ1V0DS
μPC4570GR-9LG
MEASUREMENT CIRCUIT
Figure1 Total Harmonic Distortion Measurement Circuit
−
VO = 3 Vr.m.s.
+
2 kΩ
Figure2 Noise Measurement Circuit (RIAA)
8 200 pF
2 400 pF
47 μF
610 Ω
+
30 kΩ
40 dB Amp.
LPF
330 kΩ
−
1.5 μF
+
V
O
= (36.5 dB+40 dB) × V
n
(f
O
= 30 kHz)
2.2 kΩ
33 μF
VO
V =
n
+
76.5 dB
100 kΩ
+
56 kΩ
Figure3 Noise Measurement Circuit (FLAT+JIS A)
10 kΩ
−
V
O
= 40 dB × V
n
JIS A
VO
100 Ω
V =
n
+
40 dB
RS = 100 Ω
5
Data Sheet G17930EJ1V0DS
μPC4570GR-9LG
TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.)
POWER DISSIPATION
OPEN LOOP FREQUENCY RESPONSE
120
100
80
60
40
20
0
600
500
400
300
200
100
With glass epoxy PWB
(See Note4)
V+_
+_
15 V
=
183˚C/W
1
10 100 1 k 10 k 100 k 1 M 10 M
f- Frequency - Hz
0
20
40
60
80
100
T
A
- Operating Ambient Temperature -
INPUT OFFSET VOLTAGE
˚C
INPUT BIAS CURRENT
140
120
100
80
3
2.5
2
1.5
1
0.5
0
0.5
+
= 15 V
−
V
V
= 15 V
each 5 samples data
60
−
−
1.5
1
40
−
−2
20
−
2.5
0
−
3
−
20
0
20
40
60
80
C
−
20
0
20
40
60
80
C
T
A
- Operating Ambient Temperature -
˚
T
A
- Operating Ambient Temperature - ˚
LARGE SIGNAL FREQUENCY RESPONSE
OUTPUT CURRENT LIMIT
15
10
5
30
20
V
= 15 V
V
=
15 V
RL
= 10 kΩ
−
O
V
IO SINK
10
0
+
O
V
I
O
SOURCE
0
20
40
60
80
100
1 k
10 k 100 k
f - Frequency - Hz
SUPPLY CURRENT
1 M
10 M
I
O
- Output Current - mA
SUPPLY CURRENT
8
6
4
8
=
15 V
V
6
4
2
2
0
0
−20
+_
20
+_
10
0
80
40
60
0
20
V+_ - Supply Voltage - V
T
A
- Operating Ambient Temperature - ˚C
6
Data Sheet G17930EJ1V0DS
μPC4570GR-9LG
VOLTAGE FOLLOWER PULSE RESPONSE
COMMON MODE INPUT VOLTAGE RANGE
20
10
V+_
+_
15 V
=
A
V
= 1
RL
= 2 kΩ
10
0
5
0
−10
−5
−20
−10
+
_
+
_
20
0
10
V+_- Supply Voltage - V
0
2
4
6
8
t - Time - s
μ
INPUT EQUIVALENT NOISE VOLTAGE (FLAT+JIS A)
100
INPUT EQUIVALENT NOISE VOLTAGE DENSITY
8
V +_
V+_
+_
15 V
+_
15 V
=
=
RS
= 100 Ω
6
4
10
1
2
0
0.1
10
10
100
1 k
10 k
100 k
100
RS - Source Resistance - Ω
1 k
10 k
100 k
f - Frequency - Hz
TOTAL HARMONIC DISTORTION
1
V+_
+_
15 V
=
V
O
= 3 Vr.m.s.
A
R
V = 1
0.1
L
= 2 kΩ
0.01
0.001
0.0001
100
1 k
10
10 k
100 k
f - Frequency - Hz
7
Data Sheet G17930EJ1V0DS
μPC4570GR-9LG
PACKAGE DRAWING (Unit: mm)
8-PIN PLASTIC TSSOP (5.72mm (225))
D
D1
detail of lead end
A3
5
8
c
θ
L
Lp
4
1
(UNIT:mm)
ITEM DIMENSIONS
D
D1
E
3.15 0.15
3.00 0.10
4.40 0.10
6.40 0.20
1.20 MAX.
0.10 0.05
1.00 0.05
0.25
e
ZD
M
b
x
S
HE
A
HE
E
A
A1
A2
A3
A2
L1
+0.06
b
0.24
−0.05
S
c
L
0.145 0.055
0.50
Lp
L1
0.60 0.15
1.00 0.20
y
A1
S
+5°
3°
θ
−3°
e
x
0.65
0.10
0.10
NOTE
Each lead centerline is located within 0.10mm of
its true position at maximum material condition.
y
ZD
0.60
P8GR-65-9LG
8
Data Sheet G17930EJ1V0DS
μPC4570GR-9LG
RECOMMENDED SOLDERING CONDITIONS
The μPC4570GR-9LG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales
representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Process
Conditions
Symbol
Infrared Ray Reflow
Peak temperature: 260°C or below (Package surface temperature),
Reflow time: 60 seconds or less (at 220°C or higher),
Maximum number of reflow processes: 3 time.
IR60-00-3
Wave Soldering
Solder temperature: 260°C or below, Flow time: 10 seconds or less,
Maximum number of flow processes: 1 time,
WS60-00-1
P350
Pre-heating temperature: 120°C or below (Package surface temperature).
Pin temperature: 350°C or below,
Partial Heating Method
Heat time: 3 seconds or less (Per each side of the device).
Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the
device will be damaged by heat stress.
9
Data Sheet G17930EJ1V0DS
μPC4570GR-9LG
•
The information in this document is current as of November, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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