UPC4572C(5) [RENESAS]
DUAL OP-AMP, 1500uV OFFSET-MAX, 9MHz BAND WIDTH, PDIP8, 0.300 INCH, PLASTIC, DIP-8;
| 型号： | UPC4572C(5) |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | DUAL OP-AMP, 1500uV OFFSET-MAX, 9MHz BAND WIDTH, PDIP8, 0.300 INCH, PLASTIC, DIP-8 放大器 光电二极管 |
| 文件： | 总13页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
μPC4572
LOW SUPPLY VOLTAGE, ULTRA LOW-NOISE, HIGH SPEED, WIDE BAND,
LOW IB DUAL OPERATIONAL AMPLIFIER
DESCRIPTION
The μ PC4572 is a dual wide band, ultra low noise operational amplifier designed for low supply voltage operation of +4 V
to +14 V single supply and 2 V to 7 V split supplies. Using high hFE PNP transistors for the input circuit, Input bias current
and input equivalent noise are better than conventional wide band operational amplifier.
The μ PC4572 is an excellent choice for preamplifiers and active filters in audio, instrumentation, and communication
circuit.
FEATURES
• Ultra low noise: en = 4.0 nV/ Hz
• Low input bias current: 100 nA
• High slew rate: 6 V/ μs
• Low supply voltage: 2 V to 7 V (Split)
+4 V to +14 V (Single)
• Internal frequency compensation
<R>
<R>
PIN CONFIGURATION (Top View)
ORDERING INFORMATION
Part Number
Package
μ
PC4572C, 4572C(5), 4572G2, 4572G2(5)
μ PC4572C
8-pin plastic DIP (7.62 mm (300) )
8-pin plastic DIP (7.62 mm (300) )
8-pin plastic SOP (5.72 mm (225) )
8-pin plastic SOP (5.72 mm (225) )
μ PC4572C(5)
μ PC4572G2
μ PC4572G2(5)
OUT
1
1
2
3
4
8 V+
7 OUT
6 II2
1
−
+
I
I1
2
2
−
+
EQUIVALENT CIRCUIT (1/2 Circuit)
I
N1
+
V
V−
5 IN2
R
1
Q
7
Q
5
Q14
Q11
Q
13
Q
16
Q8
R
7
Q
2
I
I
Q
1
Q
9
R8
R
9
R
11
I
N
R6
R5
C2
Q
15
Q
12
Q
6
OUT
Q
3
Q
4
Q10
R10
R3
R4
R2
C1
Q
17
V−
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G15972EJ6V0DS00 (6th edition)
Date Published December 2007 NS
Printed in Japan
1986
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
μPC4572
<R>
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
−0.3 to +15
10
Unit
V
Note1
Voltage between V+ and V−
Differential Input Voltage
Input Voltage Note2
V+ − V−
VID
V
V− − 0.3 to V+ + 0.3
V− − 0.3 to V+ + 0.3
350
VI
V
Output Voltage Note3
VO
V
C
Package Note4
Power Dissipation
PT
mW
mW
sec
°C
°C
G2 Package Note5
Output Short Circuit Duration Note6
440
ts
TA
10
Operating Ambient Temperature
Storage Temperature
−20 to +80
−55 to +125
Tstg
Notes 1. Reverse connection of supply voltage can cause destruction.
2. The input voltage should be allowed to input without damage or destruction. Even during the transition
period of supply voltage, power on/off etc., this specification should be kept. The normal operation will
establish when the both inputs are within the Common Mode Input Voltage Range of electrical
characteristics.
3. This specification is the voltage, which should be allowed to supply to the output terminal from external
without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this
specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of
electrical characteristics.
4. Thermal derating factor is −5.0 mW/°C when ambient temperature is higher than 55°C.
5. Thermal derating factor is −4.4 mW/°C when ambient temperature is higher than 25°C.
6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and
Note 5.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
2
TYP.
5
MAX.
7
Unit
V
Supply Voltage (Split)
V
Supply Voltage (V− = GND)
Output Current
V+
IO
+4
+5/ +12
+14
10
V
mA
pF
Capacitive Load (AV = +1)
CL
100
2
Data Sheet G15972EJ6V0DS
μPC4572
<R> μ PC4572C, μ PC4572G2
ELECTRICAL CHARACTERISTICS (TA = 25°C, V = 5 V)
Parameter
Input Offset Voltage
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
VIO
RS ≤ 50 Ω
0.3
5
mV
nA
nA
Input Offset Current Note7
Input Bias Current Note7
Large Signal Voltage Gain
Supply Current Note8
IIO
IB
10
100
100000
4.5
90
100
400
AV
RL ≥ 2 kΩ , VO = 2 V
10000
ICC
IO = 0 A
7
mA
dB
dB
V
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Output Voltage Swing
CMR
SVR
Vom
70
70
85
RL ≥ 10 kΩ
RL ≥ 2 kΩ
3.3
3.0
3.5
15
3.7
3.5
4
Common Mode Input Voltage Range
Output Short Circuit Current
Slew Rate
VICM
IO short
SR
V
mA
RL = 0
20
AV = +1, RL ≥ 2 kΩ
fO = 100 kHz
open loop
3.5
10
6
V/ μs
MHz
MHz
degree
%
Gain Band Width Product
Unity Gain Frequency
Phase Margin
GBW
funity
16
9
φunity
THD
open loop
60
Total Harmonic Distortion
VO = 1 Vr.m.s., f = 20 Hz to 20 kHz
(Fig.1)
0.002
Input Equivalent Noise Voltage
Vn
RIAA (Fig.2)
0.8
0.5
4.5
4.0
0.7
120
2
μVr.m.s.
FLAT+JIS A, RS = 100 Ω (Fig.3)
fO = 10 Hz
0.65
Input Equivalent Noise Voltage Density
en
in
nV/ Hz
fO = 1 kHz
Input Equivalent Noise Current Density
Channel Separation
fO = 1 kHz
pA/ Hz
dB
f = 20 Hz to 20 kHz
Average VIO Temperature Drift
ΔVIO/ ΔT
μV/°C
ELECTRICAL CHARACTERISTICS (TA = 25°C, V = 5 V, V− = GND)
Parameter
Input Offset Voltage
Symbol
Conditions
MIN.
8000
TYP.
0.3
MAX.
Unit
mV
VIO
RS ≤ 50 Ω
5
Input Offset Current Note7
Input Bias Current Note7
Large Signal Voltage Gain
Supply Current Note8
IIO
IB
10
100
80000
4
100
400
nA
nA
AV
RL ≥ 2 kΩ
ICC
IO = 0 A
6
mA
dB
dB
V
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Output Voltage (High)
CMR
SVR
VOH
VOL
VICM
SR
60
60
75
70
RL ≥ 2 kΩ (RL to 1/2 V+)
RL ≥ 2 kΩ (RL to 1/2 V+)
3.2
3.5
1.3
Output Voltage (Low)
1.6
3.5
V
Common Mode Input Voltage Range
Slew Rate
1.5
V
AV = +1
4
V/ μs
MHz
Gain Band Width Product
GBW
12
Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.
8. This current flows irrespective of the existence of use.
3
Data Sheet G15972EJ6V0DS
μPC4572
μ PC4572C(5), μ PC4572G2(5)
<R>
ELECTRICAL CHARACTERISTICS (TA = 25°C, V = 5 V)
Parameter
Input Offset Voltage
Symbol
Conditions
MIN.
TYP.
0.3
MAX.
1.5
Unit
VIO
RS ≤ 50 Ω
mV
nA
nA
Input Offset Current Note7
Input Bias Current Note7
Large Signal Voltage Gain
Supply Current Note8
IIO
IB
10
100
100000
4.5
50
200
AV
RL ≥ 2 kΩ, VO = 2 V
30000
ICC
IO = 0 A
5.5
mA
dB
dB
V
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Output Voltage Swing
CMR
SVR
Vom
75
90
70
85
RL ≥ 10 kΩ
RL ≥ 2 kΩ
3.45
3.3
3.7
3.5
Common Mode Input Voltage Range
VICM
+3.8
−3.7
4
V
Output Short Circuit Current
Slew Rate
IO short
SR
RL = 0
15
3.5
10
20
6
mA
V/ μs
MHz
MHz
degree
%
AV = +1, RL ≥ 2 kΩ
fO = 100 kHz
open loop
Gain Band Width Product
Unity Gain Frequency
Phase Margin
GBW
funity
16
9
φunity
THD
open loop
60
Total Harmonic Distortion
VO = 1 Vr.m.s., f = 20 Hz to 20 kHz
(Figure1)
0.002
Input Equivalent Noise Voltage
Vn
RIAA (Figure2)
FLAT+JIS A, RS = 100 Ω (Figure3)
fO = 10 Hz
0.8
0.5
4.5
4.0
0.7
120
2
μVr.m.s.
0.65
Input Equivalent Noise Voltage Density
en
in
nV/ Hz
fO = 1 kHz
Input Equivalent Noise Current Density
Channel Separation
fO = 1 kHz
pA/ Hz
dB
f = 20 Hz to 20 kHz
Average VIO Temperature Drift
ΔVIO/ ΔT
μV/°C
ELECTRICAL CHARACTERISTICS (TA = 25°C, V+ = +5 V, V− = GND)
Parameter
Input Offset Voltage
Symbol
Conditions
MIN.
TYP.
0.3
MAX.
1.5
Unit
mV
VIO
RS ≤ 50 Ω
Input Offset Current Note7
Input Bias Current Note7
Large Signal Voltage Gain
Supply Current Note8
IIO
IB
10
100
80000
4
50
nA
nA
200
AV
RL ≥ 2 kΩ ,
40000
ICC
IO = 0 A
5
mA
dB
dB
V
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Output Voltage (High)
CMR
SVR
VOH
VOL
VICM
SR
65
60
75
70
RL ≥ 2 kΩ (RL to 1/2 V+)
RL ≥ 2 kΩ (RL to 1/2 V+)
3.4
3.5
1.3
Output Voltage (Low)
1.45
3.8
V
Common Mode Input Voltage Range
Slew Rate
1.2
V
AV = +1
4
V/ μs
MHz
Gain Band Width Product
GBW
12
Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.
8. This current flows irrespective of the existence of use.
4
Data Sheet G15972EJ6V0DS
μPC4572
MEASUREMENT CIRCUITS
Fig. 1 Total Harmonic Distortion Measurement Circuit
−
VO = 1 Vr.m.s.
+
2 kΩ
Fig. 2 Noise Measurement Circuit (RIAA)
8200 pF
2400 pF
47
μ
F
610 Ω
+
30 kΩ
40 dB Amp.
LPF
330 kΩ
−
1.5
μ
F
+
V
O
= (36.5 dB + 40 dB) × V
n
(f
O
= 30 kHz)
2.2 kΩ
μ
F
33
+
VO
V =
n
+
76.5 dB
100 kΩ
56 kΩ
Fig. 3 Flat Noize Measurement Circuit (FLAT + JIS A)
10 kΩ
−
V
O
= 40 dB × V
n
JIS A
VO
100 Ω
V =
n
+
40 dB
RS = 100 Ω
5
Data Sheet G15972EJ6V0DS
μPC4572
TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.)
POWER DISSIPATION
<R>
OPEN LOOP FREQUENCY RESPONSE
600
500
400
300
200
100
0
120
100
80
60
40
20
0
V =
5
V
μ
μ
PC4572G2
200°C/W
PC4572C
227°C/W
0
20
40
60
80
100
1
10
100
1 k 10 k 100 k 1 M 10 M
T
A
- Operating Ambient Temperature -
°C
f - Frequency - Hz
INPUT OFFSET VOLTAGE
INPUT BIAS CURRENT
2
200
180
160
140
120
100
80
V
=
5 V
each 5 samples data
V
=
5 V
1.5
1
0.5
0
0.5
60
40
−1
20
−
1.5
0
−
20
0
20
40
60
80
−
2
T
A
- Operating Ambient Temperature - °C
−
20
0
20
- Operating Ambient Temperature - °C
LARGE SIGNAL FREQUENCY RESPONSE
40
60
80
TA
OUTPUT CURRENT LIMIT
15
10
5
5
4
3
2
1
0
V =
5 V
V =
5 V
RL
= 10 kΩ
V
O
+, I
O SOURCE
V
O
−, I
O SINK
0
0
10
20
30
40
100
1 k
10 k
100 k
1 M
10 M
IO
- Output Current - mA
f - Frequency - Hz
SUPPLY CURRENT
SUPPLY CURRENT
8
8
6
4
2
0
V =
5 V
6
4
2
0
−20
0
20
40
60
80
0
5
10
TA
- Operating Ambient Temperature -
°
C
V
- Supply Voltage - V
6
Data Sheet G15972EJ6V0DS
μPC4572
COMMON MODE INPUT VOLTAGE RANGE
VOLTAGE FOLLOWER PULSE RESPONSE
V =
5
2.5
0
10
5
5
V
A = +1
V
R
L
= 2 kΩ
0
−2.5
−5
−5
−10
0
2
4
6
8
0
5
- Supply Voltage - V
10
t - Time - s
μ
V
INPUT EQUIVALENT NOISE VOLTAGE (FLAT+JIS A)
INPUT EQUIVALENT NOISE VOLTAGE DENSITY
100
10
1
8
6
4
2
0
V =
5 V
μ
V =
5 V
R
S
= 100 Ω
0.1
10
100
1 k
- Frequency - Hz
10 k
100 k
10
100
1 k
10 k
100 k
R
S
- Source Resistance - Ω
f
TOTAL HARMONIC DISTORTION
V =
1
0.1
5
V
V
A
O
= 3 Vr.m.s.
= +1
V
R
L
= 2 kΩ
0.01
0.001
0.0001
10
100
1 k
f - Frequency - Hz
10 k
100 k
7
Data Sheet G15972EJ6V0DS
μPC4572
<R> PACKAGE DRAWINGS (Unit: mm)
8-PIN PLASTIC DIP (7.62mm(300))
8
5
1
4
A
K
L
J
P
I
C
H
G
B
M
R
F
M
D
N
NOTES
ITEM MILLIMETERS
1. Each lead centerline is located within 0.25 mm of
its true position (T.P.) at maximum material condition.
A
B
C
D
F
G
H
I
10.16 MAX.
1.27 MAX.
2.54 (T.P.)
0.50 0.10
1.4 MIN.
2. ltem "K" to center of leads when formed parallel.
3.2 0.3
0.51 MIN.
4.31 MAX.
5.08 MAX.
7.62 (T.P.)
6.4
J
K
L
+0.10
0.25
M
−0.05
N
P
R
0.25
0.9 MIN.
0∼15°
P8C-100-300B,C-2
8
Data Sheet G15972EJ6V0DS
μPC4572
8-PIN PLASTIC SOP (5.72 mm (225))
8
5
detail of lead end
P
1
4
A
H
I
F
J
G
S
B
L
N
S
C
K
M
D
M
E
NOTE
ITEM MILLIMETERS
Each lead centerline is located within 0.12 mm of
its true position (T.P.) at maximum material condition.
+0.17
5.2
A
−0.20
B
C
0.78 MAX.
1.27 (T.P.)
+0.08
0.42
D
−0.07
E
F
G
H
I
0.1 0.1
1.59 0.21
1.49
6.5 0.3
4.4 0.15
1.1 0.2
J
+0.08
0.17
K
−0.07
L
M
N
0.6 0.2
0.12
0.10
+7°
3°
P
−3°
S8GM-50-225B-6
9
Data Sheet G15972EJ6V0DS
μPC4572
<R>
RECOMMENDED SOLDERING CONDITIONS
The μ PC4572 should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales
representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Type of Surface Mount Device
μ PC4572G2, 4572G2(5): 8-pin plastic SOP (5.72 mm (225) )
Process
Conditions
Symbol
Infrared Ray Reflow
Peak temperature: 230°C or below (Package surface temperature),
Reflow time: 30 seconds or less (at 210°C or higher),
Maximum number of reflow processes: 1 time.
IR30-00-1
Vapor Phase Soldering
Wave Soldering
Peak temperature: 215°C or below (Package surface temperature),
Reflow time: 40 seconds or less (at 200°C or higher),
Maximum number of reflow processes: 1 time.
VP15-00-1
WS60-00-1
–
Solder temperature: 260°C or below, Flow time: 10 seconds or less,
Maximum number of flow processes: 1 time,
Pre-heating temperature: 120°C or below (Package surface temperature).
Partial Heating Method
Pin temperature: 300°C or below,
Heat time: 3 seconds or less (Per each side of the device).
Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the
device will be damaged by heat stress.
Type of Through-hole Device
μ PC4572C, 4572C(5): 8-pin plastic DIP (7.62 mm (300) )
Process
Conditions
Wave Soldering
Solder temperature: 260°C or below,
(only to leads)
Flow time: 10 seconds or less.
Partial Heating Method
Pin temperature: 300°C or below,
Heat time: 3 seconds or less (per each lead).
Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that
the package body does not get jet soldered.
<R>
REFERENCE DOCUMENTS
QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES
SEMICONDUCTOR DEVICE MOUNT MANUAL
C11531E
http://www.necel.com/pkg/en/mount/index.html
IEI-1212
NEC SEMICONDUCTOR DEVICE RELIABILITY/
QUALITY CONTROL SYSTEM- STANDARD LINEAR IC
10
Data Sheet G15972EJ6V0DS
μPC4572
•
The information in this document is current as of December, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
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•
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circuits, software and information in the design of a customer's equipment shall be done under the full
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•
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(Note)
(1)
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M8E 02. 11-1
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