UPC4570G2-E2-A [RENESAS]

Ultra Low-Noise, High-speed, Wide Band, Dual Operational Amplifier, SOP, /;
UPC4570G2-E2-A
型号: UPC4570G2-E2-A
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Ultra Low-Noise, High-speed, Wide Band, Dual Operational Amplifier, SOP, /

放大器 光电二极管
文件: 总13页 (文件大小:278K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
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DATA SHEET  
BIPOLAR ANALOG INTEGRATED CIRCUIT  
μPC4570  
ULTRA LOW-NOISE, WIDEBAND, DUAL OPERATIONAL AMPLIFIER  
DESCRIPTION  
The μ PC4570 is an ultra low-noise, wideband high slew-rate, dual operational amplifier. Input equivalent noise is three  
times better than the conventional 4558 type op-amps. The gain bandwidth products and the slew-rate are seven times  
better than 4558. In spite of fast AC performance, the μ PC4570 is extremely stable under voltage-follower circuit  
conditions. Supply current is also improved compared with conventional wideband op-amps. The μ PC4570 is an excellent  
choice for pre-amplifiers and active filters in audio, instrumentation, and communication circuits.  
FEATURES  
Ultra low noise: en = 4.5 nV/Hz  
High slew rate: 7 V/μs  
High gain bandwidth product: GBW = 15 MHz at 100 kHz  
Internal frequency compensation  
<R>  
PIN CONFIGURATION (Top View)  
<R>  
ORDERING INFORMATION  
Part Number  
Package  
μ
1
2
3
4
PC4570C, 4570G2  
μ PC4570C  
μ PC4570G2  
μ PC4570G2(5)  
8-pin plastic DIP (7.62 mm (300))  
8-pin plastic SOP (5.72 mm (225))  
8-pin plastic SOP (5.72 mm (225))  
OUT  
1
8 V+  
1
+
I
I1  
7 OUT  
6 II2  
2
2
+
EQUIVALENT CIRCUIT (1/2 Circuit)  
I
N1  
+
V
V−  
5
I
N2  
R
1
Q
7
Q
5
Q
14  
Q
11  
Q
13  
Q
8
R
7
Q
16  
Q
2
II  
Q
1
Q
9
R
8
I
N
R
6
R
12  
9
R
5
C
2
Q
15  
Q
Q
6
OUT  
Q
3
Q
4
Q
10  
D
R
10  
R
3
R
4
R
2
C
1
V−  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. G10528EJ8V0DS00 (8th edition)  
Date Published December 2007 NS  
Printed in Japan  
1987  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
μPC4570  
<R>  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Parameter  
Symbol  
Ratings  
0.3 to +36  
30  
Unit  
V
Note1  
Voltage between V+ and V−  
Differential Input Voltage  
Input Voltage Note2  
V+ V−  
VID  
V
VI  
V0.3 to V+ + 0.3  
V0.3 to V+ + 0.3  
350  
V
Output Voltage Note3  
VO  
V
Power Dissipation  
C Package Note4  
G2 Package Note5  
PT  
mW  
mW  
sec  
°C  
°C  
440  
Output Short Circuit Duration Note6  
Operating Ambient Temperature  
Storage Temperature  
ts  
10  
TA  
Tstg  
20 to +80  
55 to +125  
Notes 1. Reverse connection of supply voltage can cause destruction.  
2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of  
supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the  
both inputs are within the Common Mode Input Voltage Range of electrical characteristics.  
3. This specification is the voltage which should be allowed to supply to the output terminal from external without  
damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification  
should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical  
characteristics.  
4. Thermal derating factor is 5.0 mW/°C when operating ambient temperature is higher than 55°C.  
5. Thermal derating factor is 4.4 mW/°C when operating ambient temperature is higher than 25°C.  
6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and  
Note 5.  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
MIN.  
4
TYP.  
MAX.  
16  
Unit  
V
Supply Voltage  
Output Current  
Source Resistance  
V
IO  
10  
mA  
kΩ  
pF  
RS  
CL  
50  
Capacitive Load (AV = +1)  
100  
2
Data Sheet G10528EJ8V0DS  
μPC4570  
μ PC4570C, μ PC4570G2  
<R>  
ELECTRICAL CHARACTERISTICS (TA = 25°C, V = 15 V)  
Parameter  
Symbol  
VIO  
Conditions  
RS 50 Ω  
MIN.  
TYP.  
0.3  
MAX.  
5
Unit  
mV  
nA  
Input Offset Voltage  
Input Offset Current Note7  
Input Bias Current Note7  
Large Signal Voltage Gain  
Supply Current Note8  
IIO  
10  
100  
400  
IB  
100  
300,000  
5
nA  
AV  
RL 2 kΩ , VO = 10 V  
30,000  
ICC  
IO = 0 A  
8
mA  
dB  
Common Mode Rejection Ratio  
Supply Voltage Rejection Ratio  
Output Voltage Swing  
CMR  
SVR  
Vom  
80  
80  
12  
10  
12  
5
100  
100  
13.4  
12.8  
14  
dB  
RL 10 kΩ  
RL 2 kΩ  
V
V
Common Mode Input Voltage Range  
Slew Rate  
VICM  
SR  
V
RL 2 kΩ  
7
V/μs  
MHz  
MHz  
degree  
%
Gain Bandwidth Product  
Unity Gain Frequency  
Phase Margin  
GBW  
funity  
fO = 100 kHz  
10  
15  
open loop  
7
φunity  
open loop  
50  
Total Harmonic Distortion  
THD  
VO = 3 Vr.m.s., f = 20 Hz to  
20 kHz (Figure1)  
RIAA (Figure2)  
FLAT+JIS A, RS = 100 Ω  
(Figure3)  
0.002  
Input Equivalent Noise Voltage  
Vn  
0.9  
μVr.m.s.  
μVr.m.s.  
0.53  
0.65  
Input Equivalent Noise Voltage Density  
en  
in  
fO = 10 Hz, RS = 100 Ω  
fO = 1 kHz, RS = 100 Ω  
fO = 1 kHz  
5.5  
4.5  
0.7  
120  
nV/Hz  
nV/Hz  
pA/Hz  
dB  
Input Equivalent Noise Current Density  
Channel Separation  
f = 20 Hz to 20 kHz  
Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage  
8. This current flows irrespective of the existence of use.  
3
Data Sheet G10528EJ8V0DS  
μPC4570  
μ PC4570G2(5)  
ELECTRICAL CHARACTERISTICS (TA = 25°C, V = 15 V)  
Parameter  
Symbol  
VIO  
Conditions  
RS 50 Ω  
MIN.  
TYP.  
0.3  
MAX.  
1
Unit  
mV  
nA  
Input Offset Voltage  
Input Offset Current Note7  
Input Bias Current Note7  
Large Signal Voltage Gain  
Supply Current Note8  
IIO  
10  
50  
IB  
100  
300,000  
5
200  
nA  
AV  
RL 2 kΩ , VO = 10 V  
50,000  
ICC  
IO = 0 A  
7
mA  
dB  
Common Mode Rejection Ratio  
Supply Voltage Rejection Ratio  
Output Voltage Swing  
CMR  
SVR  
Vom  
85  
85  
13  
12  
13.5  
5
100  
100  
13.4  
12.8  
14  
dB  
RL 10 kΩ  
RL 2 kΩ  
V
V
Common Mode Input Voltage Range  
Slew Rate  
VICM  
SR  
V
RL 2 kΩ  
7
V/μs  
MHz  
MHz  
degree  
%
Gain Bandwidth Product  
Unity Gain Frequency  
Phase Margin  
GBW  
funity  
fO = 100 kHz  
10  
15  
open loop  
7
φunity  
open loop  
50  
Total Harmonic Distortion  
THD  
VO = 3 Vr.m.s., f = 20 Hz to  
20 kHz (Figure1)  
RIAA (Figure2)  
FLAT+JIS A, RS = 100 Ω  
(Figure3)  
0.002  
Input Equivalent Noise Voltage  
Vn  
0.9  
μVr.m.s.  
μVr.m.s.  
0.53  
0.65  
Input Equivalent Noise Voltage Density  
en  
in  
fO = 10 Hz, RS = 100 Ω  
fO = 1 kHz, RS = 100 Ω  
fO = 1 kHz  
5.5  
4.5  
0.7  
120  
nV/Hz  
nV/Hz  
pA/Hz  
dB  
Input Equivalent Noise Current Density  
Channel Separation  
f = 20 Hz to 20 kHz  
Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage  
8. This current flows irrespective of the existence of use.  
4
Data Sheet G10528EJ8V0DS  
μPC4570  
MEASUREMENT CIRCUIT  
Figure1 Total Harmonic Distortion Measurement Circuit  
VO = 3 Vr.m.s.  
+
2 kΩ  
Figure2 Noise Measurement Circuit (RIAA)  
8 200 pF  
2 400 pF  
47 μF  
610 Ω  
+
30 kΩ  
40 dB Amp.  
LPF  
330 kΩ  
1.5 μF  
+
V
O
= (36.5 dB+40 dB) × V  
n
(f  
O
= 30 kHz)  
2.2 kΩ  
33 μF  
VO  
V =  
n
+
76.5 dB  
100 kΩ  
+
56 kΩ  
Figure3 Noise Measurement Circuit (FLAT+JIS A)  
10 kΩ  
V
O
= 40 dB × V  
n
JIS A  
VO  
100 Ω  
V =  
n
+
40 dB  
RS = 100 Ω  
5
Data Sheet G10528EJ8V0DS  
μPC4570  
TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.)  
OPEN LOOP FREQUENCY RESPONSE  
POWER DISSIPATION  
<R>  
600  
500  
400  
300  
200  
100  
120  
100  
80  
60  
40  
20  
0
V+_  
+_  
15 V  
=
μ
μ
PC4570G2  
PC4570C  
0
20  
40  
60  
80  
100  
1
10 100 1 k 10 k 100 k 1 M 10 M  
f - Frequency - Hz  
T
A
- Operating Ambient Temperature -  
INPUT OFFSET VOLTAGE  
°C  
INPUT BIAS CURRENT  
140  
120  
100  
80  
3
2.5  
2
1.5  
1
0.5  
0
0.5  
+
V
=
15 V  
V
=
15 V  
each 5 samples data  
60  
1.5  
1
40  
2.5  
2
20  
0
3
20  
0
20  
40  
60  
80  
C
20  
0
20  
40  
60  
80  
C
T
A
- Operating Ambient Temperature -  
°
TA  
- Operating Ambient Temperature - °  
OUTPUT CURRENT LIMIT  
LARGE SIGNAL FREQUENCY RESPONSE  
30  
15  
10  
5
V
= 15 V  
V
=
15 V  
R
L
= 10 kΩ  
20  
O
V
IO SINK  
10  
0
+
O
V
IO  
SOURCE  
0
20  
40  
60  
80  
100  
1 k  
10 k 100 k  
f - Frequency - Hz  
1 M  
10 M  
I
O
- Output Current - mA  
SUPPLY CURRENT  
SUPPLY CURRENT  
8
6
4
8
=
15 V  
V
6
4
2
2
0
0
20  
+_  
20  
+_  
0
10  
V+_ - Supply Voltage - V  
80  
40  
60  
0
20  
TA  
- Operating Ambient Temperature - °C  
6
Data Sheet G10528EJ8V0DS  
μPC4570  
VOLTAGE FOLLOWER PULSE RESPONSE  
COMMON MODE INPUT VOLTAGE RANGE  
20  
10  
V+_  
+_  
15 V  
=
A
R
V
= +1  
= 2 kΩ  
L
10  
0
5
0
10  
5  
20  
10  
+
_
+
_
20  
0
10  
V+_- Supply Voltage - V  
0
2
4
6
8
t - Time - s  
μ
INPUT EQUIVALENT NOISE VOLTAGE (FLAT+JIS A)  
100  
INPUT EQUIVALENT NOISE VOLTAGE DENSITY  
8
V +_  
V+_  
+_  
= 15 V  
+_  
=
15 V  
RS  
= 100 Ω  
6
4
10  
1
2
0
0.1  
10  
10  
100  
1 k  
10 k  
100 k  
100  
- Source Resistance - Ω  
1 k  
10 k  
100 k  
f - Frequency - Hz  
R
S
TOTAL HARMONIC DISTORTION  
1
V+_  
+_  
15 V  
=
V
A
R
O
= 3 Vr.m.s.  
= +1  
= 2 kΩ  
V
0.1  
L
0.01  
0.001  
0.0001  
100  
1 k  
10  
10 k  
100 k  
f - Frequency - Hz  
7
Data Sheet G10528EJ8V0DS  
μPC4570  
<R>  
PACKAGE DRAWINGS (Unit: mm)  
8-PIN PLASTIC DIP (7.62mm(300))  
8
5
1
4
A
K
L
J
P
I
C
H
G
B
M
R
F
M
D
N
NOTES  
ITEM MILLIMETERS  
1. Each lead centerline is located within 0.25 mm of  
its true position (T.P.) at maximum material condition.  
A
B
C
D
F
G
H
I
10.16 MAX.  
1.27 MAX.  
2.54 (T.P.)  
0.50 0.10  
1.4 MIN.  
2. ltem "K" to center of leads when formed parallel.  
3.2 0.3  
0.51 MIN.  
4.31 MAX.  
5.08 MAX.  
7.62 (T.P.)  
6.4  
J
K
L
+0.10  
0.25  
M
0.05  
N
P
R
0.25  
0.9 MIN.  
015°  
P8C-100-300B,C-2  
8
Data Sheet G10528EJ8V0DS  
μPC4570  
8-PIN PLASTIC SOP (5.72 mm (225))  
8
5
detail of lead end  
P
1
4
A
H
I
F
J
G
S
B
L
N
S
C
K
M
D
M
E
NOTE  
ITEM MILLIMETERS  
Each lead centerline is located within 0.12 mm of  
its true position (T.P.) at maximum material condition.  
+0.17  
5.2  
A
0.20  
B
C
0.78 MAX.  
1.27 (T.P.)  
+0.08  
0.42  
D
0.07  
E
F
G
H
I
0.1 0.1  
1.59 0.21  
1.49  
6.5 0.3  
4.4 0.15  
1.1 0.2  
J
+0.08  
0.17  
K
0.07  
L
M
N
0.6 0.2  
0.12  
0.10  
+7°  
3°  
P
3°  
S8GM-50-225B-6  
9
Data Sheet G10528EJ8V0DS  
μPC4570  
<R>  
RECOMMENDED SOLDERING CONDITIONS  
The μ PC4570 should be soldered and mounted under the following recommended conditions.  
For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales  
representative.  
For technical information, see the following website.  
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)  
Type of Surface Mount Device  
μ PC4570G2, μ PC4570G2(5): 8-pin plastic SOP (5.72 mm (225))  
Process  
Conditions  
Symbol  
Infrared Ray Reflow  
Peak temperature: 230°C or below (Package surface temperature),  
Reflow time: 30 seconds or less (at 210°C or higher),  
Maximum number of reflow processes: 1 time.  
IR30-00-1  
Vapor Phase Soldering  
Wave Soldering  
Peak temperature: 215°C or below (Package surface temperature),  
Reflow time: 40 seconds or less (at 200°C or higher),  
Maximum number of reflow processes: 1 time.  
VP15-00-1  
WS60-00-1  
Solder temperature: 260°C or below, Flow time: 10 seconds or less,  
Maximum number of flow processes: 1 time,  
Pre-heating temperature: 120°C or below (Package surface temperature).  
Pin temperature: 300°C or below,  
Partial Heating Method  
Heat time: 3 seconds or less (Per each side of the device).  
Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the  
device will be damaged by heat stress.  
Type of Through-hole Device  
μ PC4570C: 8-pin plastic DIP (7.62 mm (300))  
Process  
Conditions  
Wave Soldering  
Solder temperature: 260°C or below,  
Flow time: 10 seconds or less.  
(only to leads)  
Partial Heating Method  
Pin temperature: 300°C or below,  
Heat time: 3 seconds or less (per each lead).  
Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that  
the package body does not get jet soldered.  
<R> REFERENCE DOCUMENTS  
QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES  
SEMICONDUCTOR DEVICE MOUNT MANUAL  
C11531E  
http://www.necel.com/pkg/en/mount/index.html  
IEI-1212  
NEC SEMICONDUCTOR DEVICE RELIABILITY/  
QUALITY CONTROL SYSTEM- STANDARD LINEAR IC  
10  
Data Sheet G10528EJ8V0DS  
μPC4570  
The information in this document is current as of December, 2007. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
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Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
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"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
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(Note)  
(1)  
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
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(2)  
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  

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