RJP1CS06DWS-80 [RENESAS]
Inverter;型号: | RJP1CS06DWS-80 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Inverter |
文件: | 总4页 (文件大小:115K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJP1CS06DWA / RJP1CS06DWS
1250V - 100A - IGBT
Application: Inverter
R07DS0829EJ0400
Rev.4.00
Sep 30, 2015
Features
Low collector to emitter saturation voltage
CE(sat) = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Tc = 25C)
V
High speed switching
Short circuit withstands time (10 s min.)
Outline
Die
Wafer
2
C
2
3
3
1 G
1
E
3
3
1. Gate
2. Collector (The back)
3. Emitter
Absolute Maximum Ratings
( Tc = 25°C unless otherwise noted )
Item
Collector to emitter voltage
Gate to emitter voltage
Symbol
VCES
VGES
IC
Ratings
1250
±30
Unit
V
V
Collector current
Tc = 25°C
200
A
Tc = 100°C
IC
100
A
Junction temperature
Tj
175 Note1
C
Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175C.
R07DS0829EJ0400R07DS0829EJ0400 Rev.4.00
Sep 30, 2015
Page 1 of 3
RJP1CS06DWA / RJP1CS06DWS
Preliminary
Electrical Characteristics (Datas below are measured values on a package configuration.)
(Tc = 25°C unless otherwise noted)
Item
Symbol
ICES
Min
—
—
5.0
—
—
—
—
—
—
—
—
—
—
—
Typ
—
Max
1
Unit
Test Conditions
VCE = 1250 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 3.3mA
IC = 100 A, VGE = 15 V Note2
VCE = 25 V
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
A
A
V
IGES
—
±1
6.8
2.25
—
VGE(off)
VCE(sat)
Cies
Coes
Cres
Qg
—
1.8
10.0
0.28
0.23
540
85
V
nF
nF
nF
nC
nC
nC
ns
ns
ns
ns
VGE = 0
Output capacitance
—
f = 1 MHz
Reveres transfer capacitance
Total gate charge
—
—
VGE = 15 V
VCE = 600 V
Gate to emitter charge
Qge
Qgc
td(on)
tr
—
IC = 100 A
Gate to collector charge
Switching time Note3
290
70
—
—
VCC = 600 V
IC = 100 A
60
—
VGE = ±15 V
td(off)
tf
420
160
—
Rg = 10 , Tc = 150 C
Inductive load
—
Short circuit withstand time Note4
Notes: 2. Pulse test.
tsc
10
—
—
s
VCC 720 V , VGE = 15 V
Tc = 150 C
3. Switching time test circuit and waveform are shown below.
4. Verified by design.
Switching Time Test Circuit
Waveform
90%
VGE
Diode clamp
10%
L
VCC
IC
90%
90%
D.U.T
Rg
10%
tf
10%
tr
td(off)
td(on)
R07DS0829EJ0400 R07DS0829EJ0400 Rev.4.00
Sep 30, 2015
Page 2 of 3
RJP1CS06DWA / RJP1CS06DWS
Preliminary
Die Dimension
1.31
5.78
Gate
bonding pad
Emitter bonding pad (1)
Emitter bonding pad (2)
Emitter bonding pad (3)
7.15
8.8
Unit: mm
Note 1.
Illustration
Definition
Al pattern
Part of white
Part of dotted line
Part of gray
Bonding area
Final passivation
Note 2. The back of the chip is processed with Au evaporation.
Note 3. Recognition, target and any other patterns which are not related to
IGBT operation, may be changed without notice.
Ordering Information
Orderable Part Number
Shipment form
RJP1CS06DWA-80#W0
RJP1CS06DWS-80#W0
Unsawn wafer
Sawn wafer
R07DS0829EJ0400 R07DS0829EJ0400 Rev.4.00
Sep 30, 2015
Page 3 of 3
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