RJP1CS08DWA-80W0 [RENESAS]
1250V - 200A - IGBT Application: Inverter; 1250V - 200A - IGBT应用:变频器型号: | RJP1CS08DWA-80W0 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | 1250V - 200A - IGBT Application: Inverter |
文件: | 总4页 (文件大小:77K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJP1CS08DWT/RJP1CS08DWA
1250V - 200A - IGBT
Application: Inverter
R07DS0831EJ0100
Rev.1.00
Jan 23, 2013
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)
High speed switching
Short circuit withstands time (10 s min.)
Outline
Die: RJP1CS08DWT-80
Wafer: RJP1CS08DWA-80
2
C
3
3
2
1 G
1
3
E
3
1. Gate
3
2. Collector (The back)
3. Emitter
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Symbol
VCES
VGES
IC
Ratings
1250
±30
Unit
V
V
Collector current
Tc = 25°C
400
A
Tc = 100°C
IC
200
A
Junction temperature
Tj
150
C
R07DS0831EJ0100 Rev.1.00
Jan 23, 2013
Page 1 of 3
RJP1CS08DWT/RJP1CS08DWA
Preliminary
Electrical Characteristics (These data are an actual measurement value in a package.)
(Ta = 25°C)
Item
Symbol
ICES
Min
—
—
5.0
—
—
—
—
—
—
—
—
Typ
—
Max
1
Unit
A
A
V
Test Conditions
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
VCE = 1250 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 6.7 mA
IC = 200 A, VGE = 15 V Note1
VCE = 25 V
GE = 0
f = 1 MHz
VCC = 600 V Note2
IC = 200 A
IGES
—
±1
6.8
2.25
—
VGE(off)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
—
1.80
19.5
0.56
0.46
130
120
730
120
V
nF
nF
nF
ns
ns
ns
ns
V
Output capacitance
—
Reveres transfer capacitance
Switching time
—
—
—
V
GE = ±15 V
Rg = 10 , Tj = 125 C
Inductive load
td(off)
tf
—
—
Short circuit withstand time
Notes: 1. Pulse test.
tsc
10
—
—
s
VCC 720 V , VGE = 15 V
Tj = 150 C
2. Switching time test circuit and waveform are shown below.
Switching Time Test Circuit
Waveform
90%
VGE
Diode clamp
10%
L
VCC
IC
90%
90%
D.U.T
Rg
10%
tf
10%
td(off)
td(on)
tr
R07DS0831EJ0100 Rev.1.00
Jan 23, 2013
Page 2 of 3
RJP1CS08DWT/RJP1CS08DWA
Preliminary
Die Dimension
8.88
1.31
Emitter bonding pad (1)
Emitter bonding pad (2)
Emitter bonding pad (3)
Emitter bonding pad (4)
Gate
bonding pad
10.25
11.9
Unit: mm
Note 1.
Illustration
Part of white
Definition
Al pattern
Part of dotted line
Part of gray
Bonding area
Final passivation
Note 2. The back of the chip is processed with Au evaporation.
Note 3. Recognition, target and any other patterns which are not related to
IGBT operation, may be changed without notice.
Ordering Information
Orderable Part Number
RJP1CS08DWA-80#W0
RJP1CS08DWT-80#X0
R07DS0831EJ0100 Rev.1.00
Jan 23, 2013
Page 3 of 3
SALES OFFICES
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Refer to "http://www.renesas.com/" for the latest and detailed information.
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