RJP1CS05DWT [RENESAS]

1250V - 75A - IGBT Application: Inverter; 1250V - 75A - IGBT应用：变频器


型号：	RJP1CS05DWT
厂家：	RENESAS TECHNOLOGY CORP
描述：	1250V - 75A - IGBT Application: Inverter 1250V - 75A - IGBT应用：变频器双极性晶体管
文件：	总4页 (文件大小：77K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Datasheet

RJP1CS05DWT/RJP1CS05DWA

1250V - 75A - IGBT

Application: Inverter

R07DS0828EJ0100

Rev.1.00

Jan 23, 2013

Features



Low collector to emitter saturation voltage

V_CE(sat)= 1.8 V typ. (at I_C= 75 A, V_GE= 15 V, Ta = 25C)

High speed switching



Short circuit withstands time (10 s min.)

Outline

Die: RJP1CS05DWT-80

Wafer: RJP1CS05DWA-80

1 G

1. Gate

2. Collector (The back)

3. Emitter

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to emitter voltage

Gate to emitter voltage

Symbol

V_CES

V_GES

I_C

Ratings

1250

±30

Unit

Collector current

Tc = 25°C

150

Tc = 100°C

I_C

Junction temperature

150

C

R07DS0828EJ0100 Rev.1.00

Jan 23, 2013

Page 1 of 3

RJP1CS05DWT/RJP1CS05DWA

Preliminary

Electrical Characteristics (These data are an actual measurement value in a package.)

(Ta = 25°C)

Item

Symbol

I_CES

Min

—

5.0

—

Typ

—

Max

Unit

A

Test Conditions

Zero gate voltage collector current

Gate to emitter leak current

Gate to emitter cutoff voltage

Collector to emitter saturation voltage

Input capacitance

V_CE= 1250 V, V_GE= 0

V_GE= ±30 V, V_CE= 0

V_CE= 10 V, I_C= 2.5 mA

I_C= 75 A, V_GE= 15 V ^Note1

V_CE= 25 V

_GE= 0

f = 1 MHz

V_CC= 600 V ^Note2

I_C= 75 A

I_GES

—

±1

6.8

2.25

—

V_GE(off)

V_CE(sat)

Cies

Coes

Cres

t_d(on)

t_r

—

1.80

7.8

0.23

0.18

Output capacitance

—

Reveres transfer capacitance

Switching time

—

_GE=±15 V

Rg = 10 , Tj = 125 C

Inductive load

t_d(off)

t_f

350

140

—

Short circuit withstand time

Notes: 1. Pulse test.

t_sc

—

s

V_CC 720 V , V_GE= 15 V

Tj = 150 C

2. Switching time test circuit and waveform are shown below.

Switching Time Test Circuit

Waveform

90%

V_GE

Diode clamp

10%

V_CC

I_C

90%

D.U.T

10%

t_f

10%

t_d(off)

t_d(on)

t_r

R07DS0828EJ0100 Rev.1.00

Jan 23, 2013

Page 2 of 3

RJP1CS05DWT/RJP1CS05DWA

Preliminary

Die Dimension

1.31

4.88

Gate

bonding pad

Emitter bonding pad (1)

Emitter bonding pad (2)

Emitter bonding pad (3)

6.25

7.9

Unit: mm

Note 1.

Illustration

Part of white

Definition

Al pattern

Part of dotted line

Part of gray

Bonding area

Final passivation

Note 2. The back of the chip is processed with Au evaporation.

Note 3. Recognition, target and any other patterns which are not related to

IGBT operation, may be changed without notice.

Ordering Information

Orderable Part Number

RJP1CS05DWA-80#W0

RJP1CS05DWT-80#X0

R07DS0828EJ0100 Rev.1.00

Jan 23, 2013

Page 3 of 3

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Colophon 2.2

RJP1CS05DWT [RENESAS]

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