NESG2021M05-A-FB [RENESAS]
RF SMALL SIGNAL TRANSISTOR;
| 型号： | NESG2021M05-A-FB |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | RF SMALL SIGNAL TRANSISTOR |
| 文件： | 总14页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
NESG2021M05
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
R09DS0034EJ0300
Rev. 3.00
Jun 20, 2012
Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
FEATURES
•
This device is an ideal choice for low noise, high-gain at low current amplifications.
⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz
Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
Flat-lead 4-pin thin-type super minimold (M05) package
•
•
•
<R>
ORDERING INFORMATION
Part Number
Order Number
Package
Qu
Supplying Form
NESG2021M05
NESG2021M05-A
Flat-lead 4-pin thin-
type supper minimold
(M05, 2012 PKG)
(Pb-Free)
wide embossed taping
llector), Pin 4
r) face the perforation
of the tape
NESG2021M05-T1 NESG2021M05-T1-A
Remark To order evaluation samples, please contact your
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symb
Unit
V
V
V
35
mA
mW
°C
°C
Total Power Dissipation
Junction Temperature
Storage Temperature
175
150
−65 to +150
Note:
Mounted on 1.08 cmglass epoxy PCB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0034EJ0300 Rev. 3.00
Jun 20, 2012
Page 1 of 12
NESG2021M05
<R>
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Symbol
Test Conditions
MIN.
TYP.
MAX. Unit
ICBO
VCB = 5 V, IE = 0
−
−
−
−
100
100
260
nA
nA
−
IEBO
VEB = 1 V, IC = 0
Note 1
hFE
VCE = 2 V, IC = 5 mA
130
190
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
fT
VCE = 3 V, IC = 10 mA, f = 2 GHz
VCE = 3 V, IC = 10 mA, f = 2 GHz
20
17.0
−
25
19.0
0.9
−
−
GHz
dB
2
⏐S21e
⏐
NF
VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
1.2
dB
Noise Figure (2)
NF
Ga
Ga
VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
−
15.0
−
1.3
−
−
−
dB
dB
dB
Associated Gain (1)
Associated Gain (2)
VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
18.0
10.0
VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
Note 2
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
VCB = 2 V, IE = 0, f = 1 MHz
−
0.1
22.5
9.0
0.2
−
pF
dB
MSG Note 3 VCE = 3 V, IC = 10 mA, f = 2 G
Gain 1 dB Compression Output
Power
PO (1 dB)
VCE = 3 V, IC = 12 mA, f =
ZS = ZSopt, ZL = ZLopt
−
dBm
3rd Order Intermodulation
Distortion Output Intercept
Point
OIP3
VCE = 3 V, IC = 12 m
ZS = ZSopt, ZL = Z
7.0
−
dBm
Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle
2. Collector to base capacitance when the em
S21
3. MSG =
S12
hFE CLASSIFICATION
<R>
Rank
FB/YFB
T1G
Marking
hFE Value
130 to 2
R09DS0034EJ0300 Rev. 3.00
Jun 20, 2012
Page 2 of 12
NESG2021M05
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
250
0.3
Mounted on Glass Epoxy PCB
f = 1 MHz
(1.08 cm2 × 1.0 mm (t) )
200
175
150
0.2
0.1
100
50
0
25
50
75
100
125
(˚C)
150
1.0
0
2
4
6
8
10
Ambient Temperature T
A
or to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
R CURRENT vs.
TER VOLTAGE
100
10
1
V
CE = 1 V
0.1
0.01
0.001
.01
0.001
0.0001
0.0001
0.4
0.5
0.6
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to
Base to Emitter Voltage VBE (V)
COLLECTO
BASE TO EMIGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
10
1
35
30
25
20
15
10
5
V
CE = 3 V
200
180
160
140
μ
μ
μ
μ
A
A
A
A
120
μ
A
100
80
μ
μ
μ
A
A
A
0.1
0.01
0.001
60
40
μ
A
I
B
= 20
5
μ
A
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
0
1
2
3
4
6
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
Remark The graph indicates nominal characteristics.
R09DS0034EJ0300 Rev. 3.00
Jun 20, 2012
Page 3 of 12
NESG2021M05
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
100
10
V
CE = 1 V
VCE = 2 V
100
10
0.1
1
10
(mA)
100
0.1
1
10
(mA)
100
Collector Current I
C
Collector Current I
C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE = 3 V
100
10
0.1
1
10
Collector Current
Remark The graph indica
R09DS0034EJ0300 Rev. 3.00
Jun 20, 2012
Page 4 of 12
NESG2021M05
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
25
20
15
10
30
25
20
15
10
V
CE = 1 V
V
CE = 2 V
f = 2 GHz
f = 2 GHz
5
0
5
0
1
10
100
1
10
100
Collector Current I
C
(mA)
Collector Current I (mA)
C
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
G, MSG vs. FREQUENCY
30
25
20
15
10
40
V
CE = 1 V
V
CE = 3 V
I = 10 mA
C
f = 2 GHz
MAG
2
|S21e
|
5
5
0
0
1
10
0.1
1
10
100
Collector Curre
Frequency f (GHz)
INSERTION
MAG, MS
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
30
25
20
15
40
2 V
VCE = 3 V
10 mA
I = 10 mA
C
35
30
25
20
15
MSG
MSG
MAG
2
2
|S21e
|
|S21e|
10
5
10
5
0
0
0.1
1
10
100
0.1
1
10
100
Frequency f (GHz)
Frequency f (GHz)
Remark The graph indicates nominal characteristics.
R09DS0034EJ0300 Rev. 3.00
Jun 20, 2012
Page 5 of 12
NESG2021M05
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 1 V
VCE = 1 V
f = 2 GHz
MSG
MAG
f = 1 GHz
MSG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG
vsOLLECTOR CURRENT
30
25
20
15
10
5
25
V
CE = 1 V
f = 3 GHz
MSG
MAG
MAG
2
2
|S21e
|
|S21e
|
0
–5
1
10
Collector Curre
1
10
Collector Current I (mA)
100
C
INSERTION POW
vs. COLLECTO
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 2 V
VCE = 2 V
f = 2 GHz
f = 1 GHz
MSG
MAG
|S21
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
Remark The graph indicates nominal characteristics.
R09DS0034EJ0300 Rev. 3.00
Jun 20, 2012
Page 6 of 12
NESG2021M05
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 2 V
V
CE = 2 V
f = 3 GHz
f = 5 GHz
MSG
MAG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. CLECTOR CURRENT
30
25
20
15
10
5
30
V
CE = 3 V
MSG
MAG
f = 1 GHz
MSG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Curre
1
10
Collector Current I (mA)
100
C
INSERTION POW
vs. COLLECTO
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 3 V
V
CE = 3 V
f = 3 GHz
f = 5 GHz
MSG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
Remark The graph indicates nominal characteristics.
R09DS0034EJ0300 Rev. 3.00
Jun 20, 2012
Page 7 of 12
NESG2021M05
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
15
10
5
50
40
30
20
10
0
20
15
10
5
50
40
30
20
10
0
V
CE = 3 V, f = 1 GHz
V
CE = 3 V, f = 2 GHz
Icq = 12 mA (RF OFF)
Icq = 12 mA (RF OFF)
Pout
Pout
IC
IC
0
0
–5
–25
–5
–20
–20
–15
–10
–5
0
–15
–10
–5
0
5
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURREvs. INPUT POWER
20
15
10
5
50
40
30
20
20
15
50
40
30
20
10
0
V
CE = 3 V, f = 3 GHz
VHz
Icq = 12 mA (RF OFF)
Pout
IC
IC
0
–5
–25
–20
–20
–15
–10
–15
–10
–5
0
5
Input Power Pin (dB
Input Power Pin (dBm)
Remark The graph indica
R09DS0034EJ0300 Rev. 3.00
Jun 20, 2012
Page 8 of 12
NESG2021M05
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
4
3
30
25
6
5
4
3
30
25
V
CE = 1 V
VCE = 2 V
f = 1 GHz
f = 1 GHz
G
a
G
a
20
15
10
20
15
10
2
1
0
2
1
0
NF
NF
5
0
5
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLTOR CURRENT
6
5
4
3
30
25
6
5
30
25
V
CE = 1 V
VCE =
f =
f = 2 GHz
G
a
20
15
10
20
15
10
2
1
0
5
0
NF
NF
1
10
Collector Current I
1
10
Collector Current I (mA)
100
C
C
NOISE FIGURE, AS
vs. COLLECTOR
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
14
12
10
8
14
12
10
8
14
12
10
8
VCE = 2 V
f = 5.2 GHz
G
a
G
a
z
12
10
8
6
4
6
6
6
4
4
4
2
0
NF
NF
2
2
2
0
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
Remark The graph indicates nominal characteristics.
R09DS0034EJ0300 Rev. 3.00
Jun 20, 2012
Page 9 of 12
NESG2021M05
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
4
3
30
25
V
CE = 3 V
G
a
f = 1 GHz
20
15
10
2
1
0
5
0
NF
1
10
Collector Current I
100
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
4
3
30
25
V
CE = 3 V
f = 2 GHz
G
a
20
15
10
2
1
0
NF
1
10
Collector Current I
C
(
NOISE FIGURE, AS
vs. COLLECTOR
14
12
10
8
z
12
10
Ga
8
6
4
6
4
2
2
0
NF
0
1
10
Collector Current I
100
C
(mA)
Remark The graphs indicate nominal characteristics.
R09DS0034EJ0300 Rev. 3.00
Jun 20, 2012
Page 10 of 12
NESG2021M05
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0034EJ0300 Rev. 3.00
Jun 20, 2012
Page 11 of 12
NESG2021M05
<R>
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) (UNIT: mm)
(Top View)
(Bottom View)
2.05 0.1
1.25 0.1
(1.05)
0.5
PIN CONNENTION
1. Base
2. Emitter
3. Collector
4. Emitter
Remark ( )
R09DS0034EJ0300 Rev. 3.00
Jun 20, 2012
Page 12 of 12
Revision History
NESG2021M05 Data Sheet
Description
Summary
Rev.
Date
Page
−
Mar 2003
−
Previous No. : PU10188EJ02V0DS
3.00
Jun 20, 2012
p.1
p.2
Modification of ORDERING INFORMATION
Modification of ELECTRICAL CHARACTERISTICS
Modification of hFE CLASSIFICATION
Modification of S-PARAMETERS
p.11
p.12
Modification of PACKAGE DIMENSIONS
All trademarks and registered trademarks are the property of their respective owners.
C - 1
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Colophon 2.0
相关型号：
NESG2021M05-FB
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN, THIN, SUPER MINIMOLD, M05, 4 PIN
NEC
NESG2021M05-FB-A
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN, THIN, SUPER MINIMOLD, M05, 4 PIN
NEC
NESG2021M05-T1FB-A
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN, THIN, SUPER MINIMOLD, M05, 4 PIN
NEC
NESG2021M16
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
NEC
NESG2021M16-A
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
NEC
NESG2021M16-A
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
RENESAS
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