NESG2021M16-A [RENESAS]
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN;型号: | NESG2021M16-A |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN 放大器 光电二极管 晶体管 |
文件: | 总14页 (文件大小:331K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2021M16
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain at low current amplifications
NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz
•
•
•
Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, 2 GHz
High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute ratings) = 5.0 V
6-pin lead-less minimold (M16, 1208 PKG)
ORDERING INFORMATION
<R>
Part Number
Order Number
Package
Supplying Form
NESG2021M16
NESG2021M16-A
6-pin lead-less
m wide embossed taping
Pin 1 (Collector), Pin 6 (Emitter) face the
perforation side of the tape
(M16, 1208
(Pb-Free)
NESG2021M16-T3 NESG2021M16-T3-A
Remark To order evaluation samples, sales office.
Unit sample quantity is 50
ABSOLUTE MAXIMUM R
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
BO
IC
Ratings
13.0
Unit
V
5.0
V
1.5
V
35
mA
mW
°C
°C
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
175
Tj
150
Tstg
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10393EJ03V0DS (3rd edition)
Date Published September 2009 NS
Printed in Japan
2003, 2009
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NESG2021M16
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE = 0 mA
−
−
−
−
100
100
260
nA
nA
−
VEB = 1 V, IC = 0 mA
VCE = 2 V, IC = 5 mA
Note 1
hFE
130
190
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
fT
VCE = 3 V, IC = 10 mA, f = 2 GHz
20
17.0
−
25
19.0
0.9
−
−
GHz
dB
⏐S21e⏐2 VCE = 3 V, IC = 10 mA, f = 2 GHz
VCE = 2 V, IC = 3 mA, f = 2 GHz,
NF
1.2
dB
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
NF
Noise Figure (2)
−
1.3
−
−
−
dB
dB
dB
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 3 mA, f = 2 GHz,
Ga
Associated Gain (1)
Associated Gain (2)
18.0
0.0
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 3 mA, f = 5.2
Ga
ZS = ZSopt, ZL = ZLopt
Note 2
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
VCB = 2 V, IE = 0 mA
−
0.1
22.5
9
0.2
−
pF
dB
MSGNote 3 VCE = 3 V, IC =
Gain 1 dB Compression Output Power
PO (1 dB) VCE = 3 V,
f = 2 G
−
dBm
Output 3rd Order Intercept Point
OIP3
V),
−
17
−
dBm
Notes 1. Pulse measurement: PW
2. Collector to base capunded
S21
S12
3. MSG =
hFE CLASSIFICATION
Rank
FB/YFB
zE
<R>
Marking
hFE Value
130 to 260
2
Data Sheet PU10393EJ03V0DS
NESG2021M16
<R>
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
300
250
0.3
0.2
0.1
Mounted on Glass Epoxy PCB
f = 1 MHz
(1.08 cm2 × 1.0 mm (t) )
200
175
150
100
50
0
25
50
75
100
125
(°C)
150
1.0
0
4
6
8
10
Ambient Temperature T
A
o Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CURRENT vs.
TER VOLTAGE
100
10
1
V
CE = 1 V
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.4
0.5
0.6
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base t
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR s.
BASE TO EMITTLTAGE
100
10
1
35
30
25
20
15
10
5
V
CE = 3 V
200
180
160
140
μ
μ
μ
μ
A
A
A
A
120
μ
A
100
80
μ
μ
μ
A
A
A
0.1
0.01
0.001
60
40
μ
A
I
B
= 20
5
μ
A
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
0
1
2
3
4
6
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
Remark The graphs indicate nominal characteristics.
3
Data Sheet PU10393EJ03V0DS
NESG2021M16
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
1 000
100
10
V
CE = 1 V
VCE = 2 V
0.1
1
10
(mA)
100
0.1
1
10
(mA)
100
Collector Current I
C
ollector Current I
C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
V
CE = 3 V
0.1
1
Collector Cu
Remark The graphristics.
4
Data Sheet PU10393EJ03V0DS
NESG2021M16
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 1 V,
V
CE = 2 V,
f = 2 GHz
f = 2 GHz
0
0
1
10
100
100
1
10
100
Collector Current I
C
(mA)
Collector Current I (mA)
C
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
TION POWER GAIN,
G vs. FREQUENCY
30
25
20
15
10
5
V
CE = 1 V,
= 10 mA
V
CE = 3 V,
IC
f = 2 GHz
MAG
MAG
5
2
|S21e
|
MSG
0
0.1
0
1
10
100
1
10
Collector
Frequency f (GHz)
INSER
MAG,
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
E = 2 V,
= 10 mA
V
CE = 3 V,
= 10 mA
C
I
C
MSG
MSG
MAG
MAG
MAG
MAG
MSG
MSG
2
2
|S21e
|
|S21e
|
0
0.1
0
0.1
1
10
1
10
100
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
5
Data Sheet PU10393EJ03V0DS
NESG2021M16
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 1 V,
V
CE = 1 V,
MSG
MAG
f = 1 GHz
f = 2 GHz
MSG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
INSPOWER GAIN, MAG, MSG
OR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
5
30
25
20
15
10
5
V
CE = 1 V,
f = 3 GHz
MSG
MAG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION G
vs. COLLE
30
25
20
15
10
5
30
25
20
15
10
5
MAG
V
CE = 2 V,
V
CE = 2 V,
f = 2 GHz
f = 1 GHz
MSG
MAG
2
2
|S21e
|
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I
100
C
(mA)
C
(mA)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10393EJ03V0DS
NESG2021M16
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 2 V,
VCE = 2 V,
f = 5 GHz
f = 3 GHz
MSG
MAG
MSG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSPOWER GAIN, MAG, MSG
OR CURRENT
30
25
20
15
10
5
5
MSG
MAG
V
CE = 3 V,
MSG
MAG
f = 1 GHz
2
|S21e
|
2
|S21e
|
0
0
100
1
10
Collector
1
10
Collector Current I
(mA)
C
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION G
vs. COLLE
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 3 V,
V
CE = 3 V,
f = 5 GHz
f = 3 GHz
MSG
AG
MSG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I
100
C
(mA)
C
(mA)
Remark The graphs indicate nominal characteristics.
7
Data Sheet PU10393EJ03V0DS
NESG2021M16
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
15
10
5
50
40
30
20
10
0
20
15
10
5
50
40
30
20
10
0
V
CE = 3 V, f = 1 GHz,
V
CE = 3 V, f = 2 GHz,
Icq = 12 mA
Icq = 12 mA
P
out
Pout
IC
IC
0
0
–5
–25
–5
–20
–20
–15
–10
–5
0
–15
–10
–5
0
5
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTWER, COLLECTOR
CUNPUT POWER
20
15
10
5
50
40
30
2
20
50
40
30
20
10
0
V
CE = 3 V, f = 3 GHz,
Icq = 12 mA
Pout
Pout
I
C
IC
0
–5
–20
–5
–15
–15
–10
–5
–10
–5
0
5
10
Input Power P
Input Power Pin (dBm)
Remark The graphs ics.
8
Data Sheet PU10393EJ03V0DS
NESG2021M16
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
30
25
20
15
5
4
3
30
25
20
15
G
a
Ga
2
1
0
2
1
0
NF
10
5
10
5
NF
V
CE = 1 V,
V
CE = 2 V,
f = 1 GHz
f = 1 GHz
1
10
Collector Current I
100
1
10
Collector Current I
100
C
(mA)
C
(mA)
NOISE , ASSOCIATED GAIN
vs. CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
0
6
5
4
3
2
1
0
30
25
20
30
25
20
G
a
Ga
15
15
10
5
NF
NF
V
CE = 2 V,
V
C
f = 2 GHz
0
1
10
Collector Current I (mA)
100
1
10
Collector Curre
C
NOISE FIGURE,
vs. COLLECTO
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
8
25
20
15
10
10
8
25
20
15
10
V
CE = 1 V,
V
CE = 2 V,
f = 5.2 GHz
f = 5.2 GHz
6
6
Ga
Ga
4
2
0
4
2
0
5
0
5
0
NF
NF
1
10
Collector Current I (mA)
100
1
10
Collector Current I
100
C
(mA)
C
Remark The graphs indicate nominal characteristics.
9
Data Sheet PU10393EJ03V0DS
NESG2021M16
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
4
3
2
1
0
5
4
30
25
20
15
30
25
20
Ga
G
a
3
2
1
0
15
10
5
10
5
NF
NF
V
CE = 3 V,
V
CE = 3 V,
f = 2 GHz
f = 1 GHz
0
1
10
Collector Current I
100
1
10
Collector Current I
100
C
(mA)
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
8
25
20
15
1
6
G
a
4
2
0
V
C
NF
f
1
10
Collector Curren
Remark The graphs ics.
<R>
S-PARAMETERS
S-parameters and noise paprovided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave csimulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
10
Data Sheet PU10393EJ03V0DS
NESG2021M16
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)
1.0 0.05
+0.07
0.8
–0.05
itter
Emitter
Caution All four Emited to PWB in order to obtain better Electrical performance
and heat s
11
Data Sheet PU10393EJ03V0DS
NESG2021M16
•
The information in this document is current as of September, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patentopyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electroucts listed in this document
or any other liability arising from the use of such products. No licimplied or otherwise, is
granted under any patents, copyrights or other intellectual property riics or others.
Descriptions of circuits, software and other related information ded for illustrative
purposes in semiconductor product operation and applicporation of these
circuits, software and information in the design of a cudone under the full
responsibility of the customer. NEC Electronics assuany losses incurred by
customers or third parties arising from the use of thermation.
•
• While NEC Electronics endeavors to enhance the lectronics products, customers
agree and acknowledge that the possibility of dinated entirely. In addition, NEC
Electronics products are not taken measures the product design. When customers
use NEC Electronics products with their n their own responsibility, incorporate
sufficient safety measures such as redd anti-failure features to their products in
order to avoid risks of the damages tr social property) or injury (including death) to
persons, as the result of defects of
•
NEC Electronics products are g three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality gElectronics products developed based on a customer-
designated "quality asific application. The recommended applications of an NEC
Electronics product as indicated below. Customers must check the quality grade of
each NEC Electronicin a particular application.
"Standard": Computercommunications equipment, test and measurement equipment, audio
and visual ee electronic appliances, machine tools, personal electronic equipment
and industrial r
"Special": Transportation eqment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
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M8E0904E
相关型号:
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