ISL8104CBZ-T [RENESAS]

3A SWITCHING CONTROLLER, 1500kHz SWITCHING FREQ-MAX, PDSO14, ROHS COMPLIANT, PLASTIC, MS-012AB, SOIC-14;
ISL8104CBZ-T
型号: ISL8104CBZ-T
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

3A SWITCHING CONTROLLER, 1500kHz SWITCHING FREQ-MAX, PDSO14, ROHS COMPLIANT, PLASTIC, MS-012AB, SOIC-14

开关 光电二极管
文件: 总14页 (文件大小:775K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATASHEET  
ISL8104  
FN9257  
Rev 2.00  
March 7, 2008  
8V to 14V, Single-Phase Synchronous Buck Pulse-Width Modulation (PWM)  
Controller With Integrated Gate Drivers  
The ISL8104 is a 8V to 14V synchronous PWM controller  
with integrated MOSFET drivers. The controller features the  
Features  
• +8V ±5% to +14V ±10% Bias Voltage Range  
- 1.5V to 15.4V Input Voltage Range  
ability to safely start-up into prebiased output loads and  
provides protection against overcurrent fault events.  
Overcurrent protection is implemented using top-side  
• 0.597V Internal Reference Voltage  
MOSFET r  
sensing, eliminating the need for a current  
- 1.0% Over the Commercial Temperature Range  
- 1.5% Over the Industrial Temperature Range  
DS(ON)  
sensing resistor.  
• Voltage-Mode PWM Control with Dual-Edge Modulation  
The ISL8104 employs voltage-mode control with dual-edge  
modulation to achieve fast transient response. The operating  
frequency is adjustable from 50kHz to 1.5MHz with full (0%  
to 100%) PWM duty cycle capability. The error amplifier  
features a 15MHz (typ) gain-bandwidth product and 6V/µs  
slew rate enabling high converter bandwidth.  
• 14V High Speed N-Channel MOSFET Gate Drivers  
- 2.0A Source/3A Sink at 14V Bottom-Side Gate Drive  
- 1.25A Source/2A Sink at 14V Top-Side Gate Drive  
• Fast Transient Response  
- 15MHz (typ) Gain-Bandwidth Error Amplifier with 6V/µs  
slew rate  
- Full 0% to 100% Duty Cycle Support  
The output voltage of the converter can be regulated to as  
low as 0.597V with a tolerance of ±1.0% over the  
commercial temperature range (0°C to +70°C), and ±1.5%  
over industrial temperature range (-40°C to +85°C).  
Provided in the QFN package, a SS pin and REFIN pin  
enable supply sequencing and voltage tracking functionality.  
• Programmable Operating Frequency from 50kHz to  
1.5MHz  
• Lossless Programmable Overcurrent Protection  
- Top-Side MOSFET’s r  
Sensing  
DS(ON)  
- ~120ns Blanking Time  
Pinouts  
• Sourcing and Sinking Current Capability  
• Support for Start-Up into Prebiased Loads  
ISL8104 (16 LD QFN)  
TOP VIEW  
• Soft-Start Done and an External Reference Pin for  
Tracking Applications are Available in the QFN Package  
• Pb-free available (RoHS compliant)  
16 15 14 13  
Applications  
SS  
COMP  
FB  
1
2
3
4
12 PVCC  
11 BGATE  
10 PGND  
Test and Measurement Instruments  
• Distributed DC/DC Power Architecture  
• Industrial Applications  
EN  
9
BOOT  
Telecom/Datacom Applications  
5
6
7
8
Ordering Information  
PART NUMBER  
(Note)  
PART  
TEMP.  
PACKAGE  
(Pb-free)  
PKG.  
DWG. #  
MARKING RANGE (°C)  
ISL8104CBZ*  
ISL8104IBZ*  
ISL8104CRZ*  
ISL8104IRZ*  
8104CBZ  
8104IBZ  
0 to +70  
14 Ld SOIC  
M14.15  
M14.15  
ISL8104 (14 LD SOIC)  
TOP VIEW  
-40 to +85 14 Ld SOIC  
0 to +70  
-40 to +85 16 Ld 4x4 QFN L16.4x4  
81 04CRZ  
81 04IRZ  
16 Ld 4x4 QFN L16.4x4  
14 VCC  
13 PVCC  
1
FSET  
TSOC  
SS  
2
3
4
5
6
7
ISL8104EVAL1Z Evaluation Board  
ISL8104EVAL2Z Evaluation Board  
12  
11  
BGATE  
PGND  
COMP  
FB  
*Add “-T” suffix for tape and reel. Please refer to TB347 for details on  
reel specifications.  
10 BOOT  
9
8
TGATE  
LX  
EN  
NOTE: These Intersil Pb-free plastic packaged products employ  
special Pb-free material sets; molding compounds/die attach materials  
and 100% matte tin plate PLUS ANNEAL - e3 termination finish, which  
is RoHS compliant and compatible with both SnPb and Pb-free  
soldering operations. Intersil Pb-free products are MSL classified at  
Pb-free peak reflow temperatures that meet or exceed the Pb-free  
requirements of IPC/JEDEC J STD-020.  
GND  
FN9257 Rev 2.00  
March 7, 2008  
Page 1 of 14  
Block Diagram  
SS  
EN  
VCC  
TSOC  
INTERNAL  
REGULATOR  
200µA  
POWER-ON  
RESET (POR)  
30A  
BOOT  
SOURCE OCP  
TGATE  
SOFT-START  
SSDONE  
(QFN ONLY)  
AND  
FAULT LOGIC  
GATE  
CONTROL  
LOGIC  
LX  
FSET  
OSCILLATOR  
PWM  
6µA  
REFERENCE  
= 0.597 V  
PVCC  
BGATE  
PGND  
V
REF  
EA  
REFIN  
(QFN ONLY)  
GND  
COMP  
FB  
ISL8104  
Typical Application with Single Power Supply  
+8V TO +14V  
V
L
IN  
IN  
R
FILTER  
D
C
C
BOOT  
HFIN  
BIN  
C
F2  
PVCC  
VCC  
C
F1  
BOOT  
TSOC  
R
TSOC  
TSOC  
SSDONE  
(QFN ONLY)  
C
C
BOOT  
Q1  
Q2  
TGATE  
LX  
REFIN  
(QFN ONLY)  
L
OUT  
V
OUT  
BGATE  
PGND  
C
C
EN  
BOUT  
HFOUT  
ISL8104  
R
FSET  
FSET  
COMP  
R
2
1
C
R
3
3
C
2
SS  
C
FB  
GND  
C
SS  
R
1
R
0
Typical Application with Separated Power Supplies  
+1.5V TO +15.4V  
V
IN  
+8V TO +14V  
R
V
FILTER  
CC  
D
C
C
BIN  
BOOT  
HFIN  
C
F2  
C
F1  
PVCC  
VCC  
BOOT  
TSOC  
R
C
TSOC  
TSOC  
SSDONE  
(QFN ONLY)  
C
BOOT  
Q1  
Q2  
TGATE  
LX  
REFIN  
(QFN ONLY)  
L
OUT  
V
OUT  
BGATE  
PGND  
C
C
EN  
BOUT  
HFOUT  
ISL8104  
R
FSET  
FSET  
COMP  
R
C
2
1
C
R
3
3
C
2
SS  
FB  
GND  
C
SS  
R
1
R
0
FN9257 Rev 2.00  
March 7, 2008  
Page 3 of 14  
ISL8104  
Absolute Maximum Ratings  
Thermal Information  
Supply Voltage, V  
Enable Voltage, V  
Soft-start Done Voltage, V  
, V  
. . . . . . . . . . . . .GND - 0.3V to +16V  
. . . . . . . . . . . . . . . . . . . . .GND - 0.3V to +16V  
Thermal Resistance (Typical)  
(°C/W)  
(°C/W)  
JC  
PVCC VCC  
JA  
EN  
SOIC Package (Note 1) . . . . . . . . . . . .  
QFN Package (Notes 2, 3). . . . . . . . . .  
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . +150°C  
Maximum Storage Temperature Range. . . . . . . . . .-65°C to +150°C  
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below  
http://www.intersil.com/pbfree/Pb-FreeReflow.asp  
95  
47  
N/A  
8.5  
. . . . . . . . . .GND - 0.3V to +16V  
SSDONE  
TSOC Voltage, V  
BOOT Voltage, V  
. . . . . . . . . . . . . . . . . . . .GND - 0.3V to +16V  
. . . . . . . . . . . . . . . . . . .GND - 0.3V to +36V  
TSOC  
BOOT  
LX Voltage, V . . . . . . . . . . . . . . . . V  
- 16V to V + 0.3V  
BOOT  
LX BOOT  
All Other Pins. . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 5.0V  
ESD Rating  
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 2  
Operating Conditions  
Supply Voltage, V  
Supply Voltage, V  
. . . . . . . . . . . . . . . . .+8V 5% to +14V 10%  
VCC  
. . . . . . . . . . . . . . . .+8V 5% to +14V 10%  
PVCC  
Boot to Phase Voltage, V  
- V  
. . . . . . . . . . . . . . . . . <V  
BOOT  
LX PVCC  
Ambient Temperature Range, ISL8104C. . . . . . . . . . . 0°C to +70°C  
Ambient Temperature Range, ISL8104I. . . . . . . . . . .-40°C to +85°C  
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and  
result in failures not covered by warranty.  
NOTES:  
1. is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.  
JA  
2. is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See  
JA  
Tech Brief TB379.  
3. For , the “case temp” location is the center of the exposed metal pad on the package underside.  
JC  
4. Limits should be considered typical and are not production tested.  
Electrical Specifications Recommended Operating Conditions, unless otherwise noted, specifications in bold are valid for process,  
temperature, and line operating conditions.  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
V
SUPPLY CURRENT  
CC  
Shutdown Supply V  
Shutdown Supply V  
I
SS/EN = 0V  
SS/EN = 0V  
3.5  
6.1  
0.5  
8.5  
mA  
mA  
CC  
VCC  
I
0.30  
0.75  
PVCC  
PVCC  
POWER-ON RESET  
V
/V  
CC PVCC  
Rising Threshold  
Hysteresis  
6.45  
170  
0.70  
180  
1.4  
7.10  
250  
0.73  
200  
1.5  
7.55  
500  
0.75  
220  
1.60  
325  
V
mV  
V
V /V  
CC PVCC  
TSOC Rising Threshold  
TSOC Hysteresis  
mV  
V
Enable - Rising Threshold  
Enable - Hysteresis  
REFERENCE  
175  
250  
mV  
Reference Voltage  
T = 0°C to +70°C  
0.591  
0.588  
-1.0  
-1.5  
-4  
0.597  
0.603  
0.606  
1.0  
V
V
J
T = -40°C to +85°C  
0.597  
J
System Accuracy  
T = 0°C to +70°C  
-
-
%
J
T = -40°C to +85°C  
1.5  
%
J
REFIN Current Source (QFN Only)  
REFIN Threshold (QFN Only)  
REFIN Offset (QFN Only)  
-6  
-
-8  
µA  
V
2.10  
-3  
3.50  
3
-
mV  
FN9257 Rev 2.00  
March 7, 2008  
Page 4 of 14  
ISL8104  
Electrical Specifications Recommended Operating Conditions, unless otherwise noted, specifications in bold are valid for process,  
temperature, and line operating conditions. (Continued)  
PARAMETER  
OSCILLATOR  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Trim Test Frequency  
R
= OPEN V  
= 12  
175  
200  
15  
1.9  
1
220  
kHz  
%
FSET  
VCC  
Total Variation (Note 4)  
8k< R  
to GND < 200k  
-
1.7  
-
-
2.15  
-
FSET  
= OPEN  
Ramp Amplitude  
V  
R
V
OSC  
FSET  
P-P  
V
Ramp Bottom (Note 4)  
ERROR AMPLIFIER  
DC Gain (Note 4)  
R
R
R
= 10k, C = 100pF  
-
-
-
-
-
88  
15  
6
-
-
-
-
-
dB  
MHz  
V/s  
mA  
L
L
L
L
Gain-Bandwidth Product (Note 4)  
Slew Rate (Note 4)  
GBWP  
SR  
= 10k, C = 100pF  
L
= 10k, C = 100pF  
L
COMP Source Current (Note 4)  
COMP Sink Current (Note 4)  
GATE DRIVERS  
I
2
COMPSRC  
I
2
mA  
COMPSNK  
Top-side Drive Source Current (Note 4)  
Top-side Drive Source Impedance  
Top-side Drive Sink Current (Note 4)  
Top-side Drive Sink Impedance  
Bottom-side Drive Source Current (Note 4)  
Bottom-side Drive Source Impedance  
Bottom-side Drive Sink Current (Note 4)  
Bottom-side Drive Sink Impedance  
PROTECTION  
I
V
- V = 14V, 3nF Load  
LX  
-
-
-
-
-
-
-
-
1.25  
2.0  
2
-
-
-
-
-
-
-
-
A
A
A
A
T_SOURCE  
BOOT  
R
90mA Source Current  
T_SOURCE  
I
V
- V = 14V, 3nF Load  
BOOT LX  
T_SINK  
R
90mA Source Current  
V = 14V, 3nF Load  
1.3  
2
T_SINK  
I
B_SOURCE  
PVCC  
90mA Source Current  
R
1.3  
3
B_SOURCE  
I
V
= 14V, 3nF Load  
B_SINK  
PVCC  
R
90mA Source Current  
0.94  
B_SINK  
TSOC Current  
I
T = 0°C to +70°C  
180  
176  
-
200  
200  
10  
220  
224  
-
A  
A  
TSOC  
J
T = -40°C to +85°C  
J
TSOC Measurement Offset (Note 4)  
SOFT-START  
OCP  
TSOC = 1.5V to 15.4V  
mV  
OFFSET  
Soft-start Current  
I
22  
-
30  
-
38  
A  
SS  
SSDONE Low Output Voltage (QFN ONLY)  
I
= 2mA  
0.30  
V
SSDONE  
EN (Pin 4/6)  
Functional Pin Description (QFN/SOIC)  
This pin is a TTL compatible input. Pull this pin below 0.8V to  
disable the converter. In shutdown the soft-start pin is  
discharged and the TGATE and BGATE pins are held low.  
SS (Pin 1/3)  
Connect a capacitor from this pin to ground. This capacitor,  
along with an internal 30µA current source, sets the soft-start  
interval of the converter.  
REFIN (QFN ONLY Pin 5)  
Upon enable if REFIN is less than 2.2V, the external  
reference pin is used as the control reference instead of the  
internal 0.597V reference. An internal 6µA pull-up to 5V is  
provided for disabling this functionality.  
COMP (Pin 2/4) and FB (Pin 3/5)  
COMP and FB are the available external pins of the error  
amplifier. The FB pin is the inverting input of the error  
amplifier and the COMP pin is the error amplifier output.  
These pins are used to compensate the voltage-control  
feedback loop of the converter.  
GND (Pin 6/7)  
Signal ground for the IC. All voltage levels are measured  
with respect to this pin.  
FN9257 Rev 2.00  
March 7, 2008  
Page 5 of 14  
ISL8104  
LX (Pin 7/8)  
This pin connects to the source of the top-side MOSFET and  
the drain of the bottom-side MOSFET. This pin represents  
the return path for the top-side gate driver. During normal  
switching, this pin is used for top-side current sensing.  
R
PULLUP  
FSET  
TO VCC  
1000  
100  
10  
TGATE (Pin 8/9)  
Connect TGATE to the top-side MOSFET gate. This pin  
provides the gate drive for the top-side MOSFET.  
R
PULL-DOWN  
FSET  
TO GND  
BOOT (Pin 9/10)  
This pin provides bias to the top-side MOSFET driver. A  
bootstrap circuit may be used to create a BOOT voltage  
suitable to drive a standard N-Channel MOSFET.  
10k  
100k  
SWITCHING FREQUENCY (Hz)  
1M  
PGND (Pin 10/11)  
FIGURE 1. R  
FSET  
RESISTANCE vs FREQUENCY  
This is the power ground connection. Tie the bottom-side  
MOSFET source and board ground to this pin.  
80  
70  
60  
50  
40  
30  
20  
10  
0
BGATE (Pin 11/12)  
Connect BGATE to the bottom-side MOSFET gate. This pin  
provides the gate drive for the bottom-side MOSFET.  
C
= 3300pF  
GATE  
C
= 1000pF  
GATE  
PVCC (Pin 12/13)  
Provide an 8V to 14V bias supply for the bottom-side gate  
drive to this pin. This pin should be bypassed with a  
capacitor to PGND.  
C
= 10pF  
GATE  
VCC (Pin 13/14)  
Provide an 8V to 14V bias supply for the chip to this pin. The  
pin should be bypassed with a capacitor to GND.  
100k 200k 300k 400k 500k 600k 700k 800k 900k 1M  
SWITCHING FREQUENCY (Hz)  
FSET (Pin 14/1)  
FIGURE 2. BIAS SUPPLY CURRENT vs FREQUENCY  
This pin provides oscillator switching frequency adjustment.  
SSDONE (QFN ONLY Pin 16)  
By placing a resistor (R  
) from this pin to GND, the  
FSET  
switching frequency is set from between 200kHz and  
1.5MHz according to Equation 1:  
Provides an open drain signal at the end of soft-start.  
Functional Description  
6500  
-------------------------------------------------------  
s
R
k   
1.3 k  
FSET  
(R  
FSET  
to GND)  
F kHz200kHz  
Initialization  
(EQ. 1)  
The ISL8104 automatically initializes upon receipt of power.  
Special sequencing of the input supplies is not necessary.  
The Power-On Reset (POR) function continually monitors  
the bias voltage at the VCC pin and the driver input on the  
PVCC pin. When the voltages at VCC and PVCC exceed  
their rising POR thresholds, a 30µA current source driving  
the SS pin is enabled. Upon the SS pin exceeding 1V, the  
ISL8104 begins ramping the non-inverting input of the error  
amplifier from GND to the System Reference. During  
initialization the MOSFET drivers pull TGATE to LX and  
BGATE to PGND.  
Alternately ISL8104’s switching frequency can be lowered  
from 200kHz to 50kHz by connecting the FSET pin with a  
resistor to VCC according Equation 2:  
55000  
200kHzF kHz  
-------------------------------------------------------  
R
k   
+ 70 k  
FSET  
(R  
FSET  
to VCC)  
s
(EQ. 2)  
TSOC (Pin 15/2)  
The current limit is programmed by connecting this pin with a  
resistor and capacitor to the drain of the top-side MOSEFT.  
A 200µA current source develops a voltage across the  
resistor which is then compared with the voltage developed  
across the top-side MOSFET. A blanking period of 120ns is  
provided for noise immunity.  
Soft-Start  
During soft-start, an internal 30µA current source charges the  
external capacitor (C ) on the SS pin up to ~4V. If the  
SS  
ISL8104 is utilizing the internal reference, then as the SS pin’s  
voltage ramps from 1V to 3V, the soft-start function scales the  
FN9257 Rev 2.00  
March 7, 2008  
Page 6 of 14  
ISL8104  
reference input (positive terminal of error amp) from GND to  
VREF (0.597V nominal). If the ISL8104 is utilizing an  
externally supplied reference, when the voltage on the SS pin  
reaches 1V, the internal reference input (into the error amp)  
ramps from GND to the externally supplied reference at the  
same rate as the voltage on the SS pin. Figure 3 shows a  
typical soft-start interval. The rise time of the output voltage is,  
therefore, dependent upon the value of the soft-start  
Oscillator  
The oscillator is a triangular waveform, providing for leading  
and falling edge modulation. The peak-to-peak of the ramp  
amplitude is set at 1.9V and varies as a function of frequency.  
At 50kHz the peak to peak amplitude is approximately 1.8V  
while at 1.5MHz it is approximately 2.2V. In the event the  
regulator operates at 100% duty cycle for 64 clock cycles an  
automatic boot cap refresh circuit will activate turning on  
BGATE for approximately 1/2 of a clock cycle.  
capacitor, C . If the internal reference is used, then the  
SS  
soft-start capacitance value can be calculated through  
Equation 3:  
Overcurrent Protection  
30A t  
SS  
V
SSDONE  
----------------------------  
=
(EQ. 3)  
(EQ. 4)  
C
SS  
2V  
If an external reference is used then the soft-start  
capacitance can be calculated through Equation 4:  
V
SS  
30A t  
SS  
----------------------------  
=
C
SS  
V
REFEXT  
I
OCP  
V
EN  
V
OUT  
I
LOAD  
V
SS  
t
HICCUP  
FIGURE 4. TYPICAL OVERCURRENT PROTECTION  
The OCP function is enabled with the drivers at start-up.  
OCP is implemented via a resistor (R ) and a capacitor  
TSOC  
(C  
) connecting the TSOC pin and the drain of the  
TSOC  
top-side MOSEFT. An internal 200mA current source  
develops a voltage across R , which is then compared  
TSOC  
t
SS  
with the voltage developed across the top-side MOSFET at  
turn on as measured at the LX pin. When the voltage drop  
across the MOSFET exceeds the voltage drop across the  
FIGURE 3. TYPICAL SOFT-START INTERVAL  
Prebiased Load Start-up  
resistor, a sourcing OCP event occurs. C  
is placed in  
in  
TSOC  
parallel with R  
TSOC  
to smooth the voltage across R  
TSOC  
Drivers are held in tri-state (TGATE pulled to LX, BGATE  
pulled to PGND) at the beginning of a soft-start cycle until  
two PWM pulses are detected. The bottom-side MOSFET is  
turned on first to provide for charging of the bootstrap  
capacitor. This method of driver activation provides support  
for start-up into prebiased loads by not activating the drivers  
until the control loop has entered its linear region, thereby  
substantially reducing output transients that would otherwise  
occur had the drivers been activated at the beginning of the  
soft-start cycle.  
the presence of switching noise on the input bus.  
A 120ns blanking period is used to reduce the current  
sampling error due to leading-edge switching noise. An  
additional simultaneous 120ns low pass filter is used to  
further reduce measurement error due to noise.  
OCP faults cause the regulator to disable (top- and  
bottom-side drives disabled, SSDONE pulled low, soft-start  
capacitor discharged) itself for a fixed period of time, after  
which a normal soft-start sequence is initiated. If the voltage  
on the SS pin is already at 4V and an OCP is detected, a  
30A current sink is immediately applied to the SS pin. If an  
OCP is detected during soft-start, the 30µA current sink will  
not be applied until the voltage on the SS pin has reached 4V.  
SSDONE  
Soft-start done is only available in the 16 Ld QFN packaging  
option of the ISL8104. When the soft-start pin reaches 4V, an  
open drain signal is provided to support sequencing  
requirements. SSDONE is deasserted by disabling of the part,  
including pulling SS low, and by POR and OCP events.  
This current sink discharges the C capacitor in a linear  
fashion. Once the voltage on the SS pin has reached  
SS  
approximately 0V, the normal soft-start sequence is initiated. If  
the fault is still present on the subsequent restart, the ISL8104  
FN9257 Rev 2.00  
March 7, 2008  
Page 7 of 14  
ISL8104  
will repeat this process in a hiccup mode. Figure 4 shows a  
typical reaction to a repeated overcurrent condition that  
places the regulator in a hiccup mode. If the regulator is  
repeatedly tripping overcurrent, the hiccup period can be  
approximated by Equation 5:  
temperature range. System Accuracy includes Error Amplifier  
offset, and Reference Error. The use of REFIN may add up to  
3mV of offset error into the system (as the Error Amplifier  
offset is trimmed out via the internal System reference).  
Application Guidelines  
2 4V C  
SS  
-------------------------------  
=
t
(EQ. 5)  
HICCUP  
30A  
Layout Considerations  
As in any high frequency switching converter, layout is very  
important. Switching current from one power device to another  
can generate voltage transients across the impedances of the  
interconnecting bond wires and circuit traces. These  
interconnecting impedances should be minimized by using  
wide, short printed circuit traces. The critical components  
should be located as close together as possible using ground  
plane construction or single point grounding.  
The OCP trip point varies mainly due to MOSFET r  
DS(ON)  
variations and layout noise concerns. To avoid overcurrent  
tripping in the normal operating load range, find the R  
resistor from the following equations with:  
OCSET  
1. The maximum r  
temperature  
at the highest junction  
DS(ON)  
2. The minimum I  
from the specification table  
TSOC  
Determine the overcurrent trip point greater than the  
+14V  
VCC  
maximum output continuous current at maximum inductor  
ripple current.  
C
BP_PVCC  
BP_VCC  
SIMPLE OCP EQUATION  
PVCC  
I
r  
OC_SOURCE  
DSON  
----------------------------------------------------------------  
=
R
C
TSOC  
200A  
ISL8104  
VIN  
C
DETAILED OCP EQUATION  
I  
2
----  
I
+
r  
IN  
OC_SOURCE  
DSON  
TGATE  
BOOT  
Q
---------------------------------------------------------------------------------  
R
=
1
TSOC  
I
N  
T
TSOC  
N
= NUMBER OF TOP-SIDE MOSFETs  
T
C
IN  
L
OUT  
C
V
OUT  
V
- V  
V
OUT  
V
IN  
IN  
OUT  
LX  
------------------------------- ---------------  
I =  
f
L  
SW  
OUT  
f
= Regulator Switching Frequency  
OUT  
SW  
(EQ. 6)  
BGATE  
Q
2
High Speed MOSFET Gate Driver  
SS  
The integrated driver has the same drive capability and  
feature as the Intersil’s 12V gate driver, ISL6612. The PWM  
tri-state feature helps prevent a negative transient on the  
output voltage when the output is being shut down. This  
eliminates the Schottky diode that is used in some systems  
for protecting the loads from reversed-output-voltage  
damage. See the ISL6612 data sheet FN9153 for  
C
SS  
GND  
PGND  
KEY  
TRACE SIZED FOR 3A PEAK CURRENT  
SHORT TRACE, MINIMUM IMPEDANCE  
specification parameters that are not defined in the current  
ISL8104 “Electrical Specifications” table on page 4.  
ISLAND ON POWER PLANE LAYER  
ISLAND ON CIRCUIT AND/OR POWER PLANE LAYER  
VIA CONNECTION TO GROUND PLANE  
Reference Input  
FIGURE 5. PRINTED CIRCUIT BOARD POWER PLANES  
AND ISLANDS  
The REFIN pin allows the user to bypass the internal 0.597V  
reference with an external reference. If REFIN is NOT above  
~2.2V, the external reference pin is used as the control  
reference instead of the internal 0.597V reference. When not  
using the external reference option, the REFIN pin should be  
left floating. An internal 6µA pull-up keeps this REFIN pin  
above 2.2V in this situation.  
A multi-layer printed circuit board is recommended. Figure 5  
shows the critical components of the converter. Note that  
capacitors C and C  
could each represent numerous  
IN OUT  
physical capacitors. Dedicate one solid layer (usually a middle  
layer of the PC board) for a ground plane and make all critical  
component ground connections with vias to this layer.  
Dedicate another solid layer as a power plane and break this  
plane into smaller islands of common voltage levels. Keep the  
metal runs from the LX terminals to the output inductor short.  
Internal Reference and System Accuracy  
The Internal Reference is set to 0.597V. The total DC system  
accuracy of the system is to be within 1.5% over the industrial  
FN9257 Rev 2.00  
March 7, 2008  
Page 8 of 14  
ISL8104  
The power plane should support the input power and output  
power nodes. Use copper filled polygons on the top and  
bottom circuit layers for the LX nodes. Use the remaining  
printed circuit layers for small signal wiring.  
Figure 7 highlights the voltage-mode control loop for a  
synchronous-rectified buck converter. The output voltage is  
regulated to the reference voltage level. The error amplifier  
output is compared with the oscillator triangle wave to  
provide a pulse-width modulated wave with an amplitude of  
Locate the ISL8104 within 2 to 3 inches of the MOSFETs, Q  
1
V
at the LX node. The PWM wave is smoothed by the  
IN  
and Q (1 inch or less for 500kHz or higher operation). The  
2
output filter. The output filter capacitor bank’s equivalent  
series resistance is represented by the series resistor ESR.  
circuit traces for the MOSFETs’ gate and source connections  
from the ISL8104 must be sized to handle up to 3A peak  
current. Minimize any leakage current paths on the SS pin and  
The modulator transfer function is the small-signal transfer  
locate the capacitor, C close to the SS pin as the internal  
function of V . This function is dominated by a  
/V  
ss  
OUT COMP  
current source is only 30µA. Provide local V decoupling  
CC  
DC gain and shaped by the output filter, with a double pole  
between VCC and GND pins. Locate the capacitor, C  
as  
break frequency at F and a zero at F . For the purpose  
BOOT  
LC CE  
close as practical to the BOOT pin and the phase node.  
of this analysis, L and DCR represent the output inductance  
and its DCR, while C and ESR represents the total output  
capacitance and its equivalent series resistance.  
Compensating the Converter  
This section highlights the design consideration for a voltage  
mode controller requiring external compensation. To address a  
broad range of applications, a type-3 feedback network is  
recommended (see Figure 6).  
1
1
(EQ. 7)  
---------------------------  
2  L C  
F
=
---------------------------------  
F
=
LC  
CE  
2  C ESR  
The compensation network consists of the error amplifier  
(internal to the ISL8104) and the external R to R , C to C  
3
1
3
1
C
2
components. The goal of the compensation network is to  
provide a closed loop transfer function with high 0dB crossing  
frequency (F ; typically 0.1 to 0.3 of f ) and adequate phase  
C
R
1
2
COMP  
FB  
0
SW  
margin (better than 45°). Phase margin is the difference  
between the closed loop phase at F and 180°. The  
C
0dB  
3
equations that follow relate the compensation network’s poles,  
R
1
ISL8104  
R
zeros and gain to the components (R , R , R , C , C , and  
3
1
2
3
1
2
VOUT  
C ) in Figures 6 and 7. Use the following guidelines for  
3
locating the poles and zeros of the compensation network:  
FIGURE 6. COMPENSATION CONFIGURATION FOR THE  
ISL8104 CIRCUIT  
1. Select a value for R (1kto 10k, typically). Calculate  
1
value for R for desired converter bandwidth (F ). If  
2
0
setting the output voltage to be equal to the reference set  
voltage as shown in Figure 7, the design procedure can  
be followed as presented in Equation 8.  
C
2
V
R F  
1 0  
V F  
IN LC  
OSC  
(EQ. 8)  
----------------------------------------------  
=
R
C
R
3
2
3
D
R
C
MAX  
2
1
COMP  
As the ISL8104 supports 100% duty cycle, D  
MAX  
equals 1.  
) of 1.9V,  
-
FB  
R
The ISL8104 uses a fixed ramp amplitude (V  
1
OSC  
+
E/A  
Equation 8 simplifies to Equation 9:  
VREF  
1.9 R F  
1
0
GND  
-------------------------------  
=
R
(EQ. 9)  
2
V
F  
LC  
IN  
2. Calculate C such that F is placed at a fraction of the F  
,
1
Z1 LC  
at 0.1 to 0.75 of F (to adjust, change the 0.5 factor in  
LC  
Equation 10 to the desired number). The higher the quality  
factor of the output filter and/or the higher the ratio  
V
OSCILLATOR  
OUT  
V
IN  
V
F
/F , the lower the F frequency (to maximize  
OSC  
PWM  
CE LC Z1  
CIRCUIT  
phase boost at F ).  
LC  
L
DCR  
TGATE  
LX  
1
(EQ. 10)  
(EQ. 11)  
----------------------------------------------  
C
=
HALF-BRIDGE  
DRIVE  
1
2  R 0.5 F  
2
LC  
C
3. Calculate C such that F is placed at F  
.
2
P1 CE  
ESR  
BGATE  
C
1
-------------------------------------------------------  
=
C
2
2  R C F 1  
CE  
2
1
ISL8104  
EXTERNAL CIRCUIT  
4. Calculate R such that F is placed at F . Calculate C  
3
FIGURE 7. VOLTAGE-MODE BUCK CONVERTER  
COMPENSATION DESIGN  
3
Z2  
LC  
such that F is placed below f  
(typically, 0.3 to 1.0  
P2  
SW  
FN9257 Rev 2.00  
March 7, 2008  
Page 9 of 14  
ISL8104  
times f ). f  
SW SW  
represents the switching frequency of the  
phase margin. The mathematical model presented makes a  
number of approximations and is generally not accurate at  
frequencies approaching or exceeding half the switching  
frequency. When designing compensation networks, select  
target crossover frequencies in the range of 10% to 30% of  
regulator. Change the numerical factor (0.7) below to  
reflect desired placement of this pole. Placement of F  
lower in frequency helps reduce the gain of the  
compensation network at high frequency, in turn reducing  
the HF ripple component at the COMP pin and minimizing  
resultant duty cycle jitter.  
P2  
the switching frequency, f  
.
SW  
R
MODULATOR GAIN  
COMPENSATION GAIN  
CLOSED LOOP GAIN  
OPEN LOOP E/A GAIN  
F
F
F
P1  
1
Z1 Z2  
--------------------  
R
=
3
f
SW  
----------  
1  
(EQ. 12)  
F
LC  
F
P2  
1
----------------------------------------------  
2  R 0.7 f  
C
=
3
3
SW  
It is recommended that a mathematical model be used to  
plot the loop response. Check the loop gain against the error  
amplifier’s open-loop gain. Verify phase margin results and  
adjust as necessary. Equation 13 describes the frequency  
R2  
-------  
20log  
D
V  
IN  
R1  
MAX  
20log----------------------------------  
V
0
OSC  
G
FB  
response of the modulator (G  
), feedback compensation  
MOD  
G
CL  
(G ) and closed-loop response (G ):  
FB  
CL  
G
MOD  
FREQUENCY  
D
V  
IN  
1 + sf  ESR C  
MAX  
V
------------------------------ -----------------------------------------------------------------------------------------------------------  
LOG  
G
f=  
f=  
MOD  
F
F
CE  
F
0
2
LC  
OSC  
1 + sf  ESR + DCR  C + s f  L C  
FIGURE 8. ASYMPTOTIC BODE PLOT OF CONVERTER GAIN  
1 + sf  R C  
2
1
----------------------------------------------------  
G
FB  
sf  R  C + C   
1
1
2
Component Selection Guidelines  
1 + sf  R + R   C  
3
1
3
-------------------------------------------------------------------------------------------------------------------------  
Output Capacitor Selection  
C
C  
  
  
  
1
2
An output capacitor is required to filter the output and supply  
the load transient current. The filtering requirements are a  
function of the switching frequency and the ripple current.  
The load transient requirements are a function of the slew  
rate (di/dt) and the magnitude of the transient load current.  
These requirements are generally met with a mix of  
capacitors and careful layout.  
--------------------  
1 + sf  R C   1 + sf  R   
2
3
3
C
+ C  
2
1
G
f= G  
f  G f  
MOD FB  
wheresf= 2  f j  
(EQ. 13)  
CL  
COMPENSATION BREAK FREQUENCY EQUATIONS  
1
1
--------------------------------------------  
F
=
------------------------------  
F
=
P1  
Z1  
C
C  
2
+ C  
2
2  R C  
1
For applications that have transient load rates above 1A/ns,  
high frequency capacitors initially supply the transient and  
slow the current load rate seen by the bulk capacitors. The  
bulk filter capacitor values are generally determined by the  
ESR (effective series resistance) and voltage rating  
2
1
--------------------  
2  R  
2
C
1
1
1
-------------------------------------------------  
2  R + R   C  
------------------------------  
2  R C  
3
F
=
F
=
Z2  
P2  
1
3
3
3
(EQ. 14)  
Figure 8 shows an asymptotic plot of the DC/DC converter’s  
gain vs frequency. The actual Modulator Gain has a high gain  
peak dependent on the quality factor (Q) of the output filter,  
which is not shown. Using the previously mentioned guidelines  
should yield a compensation gain similar to the curve plotted.  
The open loop error amplifier gain bounds the compensation  
requirements rather than actual capacitance requirements.  
High frequency decoupling capacitors should be placed as  
close to the power pins of the load as physically possible. Be  
careful not to add inductance in the circuit board wiring that  
could cancel the usefulness of these low inductance  
components. Consult with the manufacturer of the load on  
specific decoupling requirements.  
gain. Check the compensation gain at F against the  
P2  
capabilities of the error amplifier. The closed loop gain, G , is  
CL  
constructed on the log-log graph of Figure 8 by adding the  
Use only specialized low-ESR capacitors intended for  
switching-regulator applications for the bulk capacitors.  
The bulk capacitor’s ESR will determine the output ripple  
voltage and the initial voltage drop after a high slew-rate  
transient. An aluminum electrolytic capacitor's ESR value is  
related to the case size with lower ESR available in larger  
case sizes. However, the equivalent series inductance  
(ESL) of these capacitors increases with case size and can  
reduce the usefulness of the capacitor to high slew-rate  
modulator gain, G  
(in dB), to the feedback  
MOD  
compensation gain, G (in dB). This is equivalent to  
FB  
multiplying the modulator transfer function and the  
compensation transfer function and then plotting the  
resulting gain.  
A stable control loop has a gain crossing with close to a  
-20dB/decade slope and a phase margin greater than 45°.  
Include worst case component variations when determining  
FN9257 Rev 2.00  
March 7, 2008  
Page 10 of 14  
ISL8104  
transient loading. Unfortunately, ESL is not a specified  
parameter. Work with your capacitor supplier and measure  
the capacitor’s impedance with frequency to select a suitable  
component. In most cases, multiple electrolytic capacitors of  
small case size perform better than a single large case  
capacitor.  
operation, select a bulk capacitor with voltage and current  
ratings above the maximum input voltage and largest RMS  
current required by the circuit. The capacitor voltage rating  
should be at least 1.25 times greater than the maximum input  
voltage, a voltage rating of 1.5 times greater is a conservative  
guideline. The RMS current rating requirement for the input  
capacitor of a buck regulator is approximately 1/2 the DC load  
current.  
Output Inductor Selection  
The output inductor is selected to meet the output voltage  
ripple requirements and minimize the converter’s response  
time to the load transient. The inductor value determines the  
converter’s ripple current and the ripple voltage is a function of  
the ripple current. The ripple voltage and current are  
approximated by Equation 15:  
For a through hole design, several electrolytic capacitors  
(Panasonic HFQ series or Nichicon PL series or Sanyo MV-GX or  
equivalent) may be needed. For surface mount designs, solid  
tantalum capacitors can be used, but caution must be exercised  
with regard to the capacitor surge current rating. These capacitors  
must be capable of handling the surge-current at power-up. The  
TPS series available from AVX, and the 593D series from  
Sprague are both surge current tested.  
V
- V  
V
OUT  
IN  
OUT  
------------------------------- ---------------  
I =  
(EQ. 15)  
V  
= I x ESR  
OUT  
Fs x L  
V
IN  
Increasing the value of inductance reduces the ripple current  
and voltage. However, the large inductance values reduce the  
converter’s response time to a load transient.  
MOSFET Selection/Considerations  
The ISL8104 requires at least 2 N-Channel power MOSFETs.  
These should be selected based upon r  
, gate supply  
DS(ON)  
One of the parameters limiting the converter’s response to a  
load transient is the time required to change the inductor current.  
Given a sufficiently fast control loop design, the ISL8104 will  
provide either 0% or 100% duty cycle in response to a load  
transient. The response time is the time required to slew the  
inductor current from an initial current value to the transient  
current level. During this interval the difference between the  
inductor current and the transient current level must be supplied  
by the output capacitor. Minimizing the response time can  
minimize the output capacitance required.  
requirements, and thermal management requirements.  
In high-current applications, the MOSFET power dissipation,  
package selection and heatsink are the dominant design  
factors. The power dissipation includes two loss components;  
conduction loss and switching loss. At a 300kHz switching  
frequency, the conduction losses are the largest component of  
power dissipation for both the top-side and the bottom-side  
MOSFETs. These losses are distributed between the two  
MOSFETs according to duty factor (see the following  
equations). Only the top-side MOSFET exhibits switching  
losses, since the schottky rectifier clamps the switching node  
before the synchronous rectifier turns on.  
The response time to a transient load is different for the  
application of load and the removal of load. Equation 16 gives  
the approximate response time interval for application and  
removal of a transient load:  
1
2
2
P
= I x r  
O
x D + Io x V x t  
x f  
top-side  
DS(ON)  
IN SW SW  
L
I  
L I  
O TRAN  
2
O
TRAN  
P
= I x r  
x (1 - D)  
bottom-side  
O
DS(ON)  
-------------------------------  
------------------------------  
t
=
t
=
FALL  
(EQ. 16)  
is the  
RISE  
V
V  
V
IN  
OUT  
OUT  
where: D is the duty cycle = V / V  
IN  
,
O
where: I  
is the transient load current step, t  
RISE  
t
is the switching interval, and  
is the switching frequency.  
TRAN  
response time to the application of load, and t  
SW  
SW  
is the  
(EQ. 17)  
f
FALL  
response time to the removal of load. With a +5V input source,  
the worst case response time can be either at the application  
or removal of load and dependent upon the output voltage  
setting. Be sure to check both of these equations at the  
minimum and maximum output levels for the worst case  
response time.  
Equation 17 assumes linear voltage-current transitions and  
does not adequately model power loss due to the  
reverse-recovery of the bottom-side MOSFETs body diode.  
The gate-charge losses are dissipated by the ISL8104 and  
don't heat the MOSFETs. However, large gate-charge  
increases the switching interval, t  
which increases the  
SW  
Input Capacitor Selection  
top-side MOSFET switching losses. Ensure that both  
MOSFETs are within their maximum junction temperature at  
high ambient temperature by calculating the temperature rise  
according to package thermal-resistance specifications. A  
separate heatsink may be necessary depending upon  
MOSFET power, package type, ambient temperature and air  
flow.  
Use a mix of input bypass capacitors to control the voltage  
overshoot across the MOSFETs. Use small ceramic capacitors  
for high frequency decoupling and bulk capacitors to supply the  
current needed each time Q1 turns on. Place the small ceramic  
capacitors physically close to the MOSFETs and between the  
drain of Q and the source of Q .  
1
2
The important parameters for the bulk input capacitor are the  
voltage rating and the RMS current rating. For reliable  
Standard-gate MOSFETs are normally recommended for use  
with the ISL8104. However, logic-level gate MOSFETs can be  
FN9257 Rev 2.00  
March 7, 2008  
Page 11 of 14  
ISL8104  
used under special circumstances. The input voltage, top-side  
gate drive level, and the MOSFETs absolute gate-to-source  
voltage rating determine whether logic-level MOSFETs are  
appropriate.  
+14V  
D
BOOT  
-
+1.2V TO +14V  
+
V
D
ISL8104  
BOOT  
Figure 9 shows the top-side gate drive (BOOT pin) supplied by  
C
BOOT  
a bootstrap circuit from +14V. The boot capacitor, C  
BOOT  
Q1  
develops a floating supply voltage referenced to the LX pin.  
This supply is refreshed each cycle to a voltage of +14V less  
TGATE  
LX  
NOTE:  
VG-S V - V  
CC D  
the boot diode drop (V ) when the bottom-side MOSFET, Q  
D
2
turns on. A MOSFET can only be used for Q if the MOSFETs  
absolute gate-to-source voltage rating exceeds the maximum  
1
+14V  
PVCC  
D2  
Q2  
voltage applied to +14V. For Q , a logic-level MOSFET can be  
used if its absolute gate-to-source voltage rating also exceeds  
the maximum voltage applied to +14V.  
2
BGATE  
PGND  
-
NOTE:  
G-S PVCC  
+
V
GND  
Figure 10 shows the top-side gate drive supplied by a direct  
connection to +14V. This option should only be used in  
converter systems where the main input voltage is +5VDC or  
less. The peak top-side gate-to-source voltage is  
FIGURE 9. TOP-SIDE GATE DRIVE - BOOTSTRAP OPTION  
approximately +14V less the input supply. For +5V main power  
and +14VDC for the bias, the gate-to-source voltage of Q is  
1
9V. A logic-level MOSFET is a good choice for Q and a logic-  
1
+14V  
level MOSFET can be used for Q if its absolute gate-to-  
2
+5V OR LESS  
source voltage rating exceeds the maximum voltage applied to  
PVCC. This method reduces the number of required external  
components, but does not provide for immunity to phase node  
ringing during turn on and may result in lower system  
efficiency.  
ISL8104  
BOOT  
Q1  
TGATE  
NOTE:  
V
G-S V - 5V  
CC  
Schottky Selection  
+14V  
Rectifier D2 is a clamp that catches the negative inductor swing  
during the dead time between turning off the bottomside  
MOSFET and turning on the top-side MOSFET. The diode must  
be a Schottky type to prevent the lossy parasitic MOSFET body  
diode from conducting. It is acceptable to omit the diode and let  
the body diode of the bottom-side MOSFET clamp the negative  
inductor swing, but efficiency could slightly decrease as a result.  
The diode's rated reverse breakdown voltage must be greater  
than the maximum input voltage.  
PVCC  
D2  
Q2  
BGATE  
PGND  
-
NOTE:  
G-S PVCC  
+
V
GND  
FIGURE 10. TOP-SIDE GATE DRIVE - DIRECT V  
OPTION  
DRIVE  
CC  
FN9257 Rev 2.00  
March 7, 2008  
Page 12 of 14  
ISL8104  
Small Outline Plastic Packages (SOIC)  
M14.15 (JEDEC MS-012-AB ISSUE C)  
14 LEAD NARROW BODY SMALL OUTLINE PLASTIC  
PACKAGE  
N
INDEX  
AREA  
0.25(0.010)  
M
B M  
H
E
INCHES  
MILLIMETERS  
-B-  
SYMBOL  
MIN  
MAX  
MIN  
1.35  
0.10  
0.33  
0.19  
8.55  
3.80  
MAX  
1.75  
0.25  
0.51  
0.25  
8.75  
4.00  
NOTES  
A
A1  
B
C
D
E
e
0.0532  
0.0040  
0.013  
0.0688  
0.0098  
0.020  
-
1
2
3
L
-
SEATING PLANE  
A
9
0.0075  
0.3367  
0.1497  
0.0098  
0.3444  
0.1574  
-
-A-  
o
h x 45  
D
3
4
-C-  
0.050 BSC  
1.27 BSC  
-
e
A1  
C
H
h
0.2284  
0.0099  
0.016  
0.2440  
0.0196  
0.050  
5.80  
0.25  
0.40  
6.20  
0.50  
1.27  
-
B
0.10(0.004)  
5
0.25(0.010) M  
C
A M B S  
L
6
N
14  
14  
7
NOTES:  
o
o
o
o
0
8
0
8
-
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of  
Publication Number 95.  
Rev. 0 12/93  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate burrs.  
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006  
inch) per side.  
4. DimensionEdoesnotincludeinterleadflashorprotrusions. Interlead  
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.  
5. The chamfer on the body is optional. If it is not present, a visual index  
feature must be located within the crosshatched area.  
6. “L” is the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater  
above the seating plane, shall not exceed a maximum value of  
0.61mm (0.024 inch).  
10. Controlling dimension: MILLIMETER. Converted inch dimensions  
are not necessarily exact.  
© Copyright Intersil Americas LLC 2006-2007. All Rights Reserved.  
All trademarks and registered trademarks are the property of their respective owners.  
For additional products, see www.intersil.com/en/products.html  
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted  
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html  
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such  
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are  
current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its  
subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN9257 Rev 2.00  
March 7, 2008  
Page 13 of 14  
ISL8104  
Quad Flat No-Lead Plastic Package (QFN)  
Micro Lead Frame Plastic Package (MLFP)  
L16.4x4  
16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE  
(COMPLIANT TO JEDEC MO-220-VGGC ISSUE C)  
MILLIMETERS  
SYMBOL  
MIN  
NOMINAL  
MAX  
1.00  
0.05  
1.00  
NOTES  
A
A1  
A2  
A3  
b
0.80  
0.90  
-
-
-
-
-
-
9
0.20 REF  
9
0.23  
1.95  
1.95  
0.28  
0.35  
2.25  
2.25  
5, 8  
D
4.00 BSC  
-
D1  
D2  
E
3.75 BSC  
9
2.10  
7, 8  
4.00 BSC  
-
E1  
E2  
e
3.75 BSC  
9
2.10  
7, 8  
0.65 BSC  
-
k
0.25  
0.50  
-
-
-
-
L
0.60  
0.75  
0.15  
8
L1  
N
-
16  
4
4
-
10  
2
Nd  
Ne  
P
3
3
-
-
0.60  
12  
9
-
9
Rev. 5 5/04  
NOTES:  
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.  
2. N is the number of terminals.  
3. Nd and Ne refer to the number of terminals on each D and E.  
4. All dimensions are in millimeters. Angles are in degrees.  
5. Dimension b applies to the metallized terminal and is measured  
between 0.15mm and 0.30mm from the terminal tip.  
6. The configuration of the pin #1 identifier is optional, but must be  
located within the zone indicated. The pin #1 identifier may be  
either a mold or mark feature.  
7. Dimensions D2 and E2 are for the exposed pads which provide  
improved electrical and thermal performance.  
8. Nominal dimensionsare provided toassistwith PCBLandPattern  
Design efforts, see Intersil Technical Brief TB389.  
9. Features and dimensions A2, A3, D1, E1, P & are present when  
Anvil singulation method is used and not present for saw  
singulation.  
10. Depending on the method of lead termination at the edge of the  
package, a maximum 0.15mm pull back (L1) maybe present. L  
minus L1 to be equal to or greater than 0.3mm.  
FN9257 Rev 2.00  
March 7, 2008  
Page 14 of 14  

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