HVC369BTRU [RENESAS]
15V, SILICON, VARIABLE CAPACITANCE DIODE;
| 型号： | HVC369BTRU |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 15V, SILICON, VARIABLE CAPACITANCE DIODE 二极管 变容二极管 光电二极管 |
| 文件： | 总5页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HVC369B
Variable Capacitance Diode for VCO
REJ03G0491-0300
(Previous: ADE-208-446B)
Rev.3.00
Jan 17, 2005
Features
•
•
•
•
Low capacitance and to be usable at GHz.
High capacitance ratio. (n = 2.3 min)
Low series resistance. (rs = 0.5Ω max)
Ultra small Flat Lead Package (UFP) is suitable for surface mount design.
Ordering Informatio
Type No
HVC3
Laser Mark
Package Code
B3
UFP
Pin Arrangement
1
Rev.3.00 Jan 17, 2005 page 1 of 4
HVC369B
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
Item
Symbol
Value
15
Reverse voltage
VR
Junction temperature
Storage temperature
Tj
Tstg
125
−55 to +125
°C
°C
Electrical Characteristics
(Ta = 25°C)
Test Condition
Item
Symbol
IR1
Min
—
Typ
—
Max
10
Unit
nA
Reverse current
VR =15 V
IR2
C1
C4
n
—
—
—
—
—
100
5.15
2.15
—
VR = 15 V, Ta = 60°C
Capacitance
4.65
1.85
.3
pF
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
C1 / C4
Capacitance ratio
Series resistance
—
Ω
r
—
0.5
VR = 1 V, f = 470 MHz
Rev.3.00 Jan 17, 2005 page 2 of 4
HVC369B
Main Characteristic
10-10
12
10
f=1MHz
10-11
10-12
10-13
10-14
8
6
4
2
0
0
4
R
Fig.1 Reve
20
0.1
1.0
Reverse voltage VR (V)
Fig.2 Capacitance vs. Reverse voltage
10
0
0.6
0.5
0.4
0.3
0.2
–1.5
0.1
0
0.1
1.0
5.0
0.1
1.0
10
Reverse voltage VR (V)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Fig.4 Linearity factor vs. Reverse voltage
Rev.3.00 Jan 17, 2005 page 3 of 4
HVC369B
Package Dimensions
As of January, 2003
Unit: mm
1.2 ± 0.10
1.6 ± 0.10
Package Code
JEDEC
UFP
—
JEITA
Mass (reference value)
Conforms
0.0016 g
Rev.3.00 Jan 17, 2005 page 4 of 4
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