HVC372B [RENESAS]
Variable Capacitance Diode for VCO; 变容二极管的VCO
| 型号： | HVC372B |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Variable Capacitance Diode for VCO |
| 文件： | 总5页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HVC372B
Variable Capacitance Diode for VCO
REJ03G0088-0100Z
(Previous: ADE-208-497)
Rev.1.00
Sep.17.2003
Features
•
•
•
High capacitance ratio. (n = 2.0 min)
Good linearity of C-V curve.
Ultra small Flat Package (UFP) is suitable for surface mount desi
Ordering Information
Type No.
Laser Mark
ode
HVC372B
B5
Pin Arrangement
1. Cathode
2. Anode
Rev.1.00, Sep.17.2003, page 1 of 4
HVC372B
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VR
Value
15
Unit
V
Reverse voltage
Junction temperature
Storage temperature
Tj
125
°C
°C
Tstg
−55 to +125
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ Max Unit Te
Reverse current
IR1
IR2
C1
C4
n
—
—
—
—
—
—
10
nA
—
100
Hz
Capacitance
15.0
7.0
2.0
—
17.0
8
Capacitance ratio
Series resistance
rs
, f = 470 MHz
Rev.1.00, Sep.17.2003, page 2 of 4
HVC372B
Main Characteristic
10–9
10–10
10–11
10–12
10–13
30
25
20
15
10
f = 1MHz
0
4
8
12
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse v
16
20
1.0
verse voltage VR (V)
Capacitance vs. Reverse voltage
10
0.6
0
–0.5
–1.0
–1.5
0.5
0.4
0.3
0.2
0.1
0
0.1
1.0
Reverse voltage VR (V)
10
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Fig.4 Linearity factor vs. Reverse voltage
Rev.1.00, Sep.17.2003, page 3 of 4
HVC372B
Package Dimensions
As of January, 2003
Unit: mm
1.2 ± 0.10
1.6 ± 0.10
de
UFP
—
s (reference value)
Conforms
0.0016 g
Rev.1.00, Sep.17.2003, page 4 of 4
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