HS0-OP470AEH/SAMPLE [RENESAS]
Operational Amplifier;
| 型号： | HS0-OP470AEH/SAMPLE |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Operational Amplifier 放大器 |
| 文件： | 总6页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATASHEET
HS-OP470ARH, HS-OP470AEH
Radiation Hardened, Very Low Noise Quad Operational Amplifiers
FN4471
Rev.3.00
Sep 21, 2018
The HS-OP470ARH and HS-OP470AEH are radiation hardened,
Features
monolithic quad operational amplifiers that provide highly
reliable performance in harsh radiation environments. Excellent
noise characteristics coupled with a unique array of dynamic
specifications make these amplifiers well-suited for a variety of
satellite system applications. Dielectrically isolated, bipolar
processing makes these devices immune to single event latch-up.
• Electrically screened to SMD # 5962-98533
• QML qualified per MIL-PRF-38535 requirements
• Radiation environment
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)
The HS-OP470ARH and HS-OP470AEH show almost no change in
offset voltage after exposure to 100krad(Si) gamma radiation,
with only a minor increase in current. Complementing these
specifications is a post radiation open-loop gain in excess of
40kV/V.
• Low noise
- At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3nV/Hz (typical)
- At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6pA/Hz (typical)
• Low offset voltage . . . . . . . . . . . . . . . . . . . 2.1mV (maximum)
• High slew rate . . . . . . . . . . . . . . . . . . . . . 1.7V/µs (minimum)
• Gain bandwidth product . . . . . . . . . . . . . . . . .8.0MHz (typical)
These quad operational amplifiers are available in an industry
standard pinout, allowing for immediate interchangeability
with most other quad operational amplifiers.
Pin Configuration
Applications
• High Q, active filters
• Voltage regulators
• Integrators
(14 LD FLATPACK)
TOP VIEW
1
2
3
4
5
6
7
14
13
OUT 1
-IN1
OUT 4
-IN4
• Signal generators
• Voltage references
• Space environments
12
11
10
+IN1
V+
+IN4
V-
+IN2
-IN2
+IN3
-IN3
Related Literature
For a full list of related documents, visit our website:
9
8
OUT 2
OUT 3
• HS-OP470ARH, HS-OP470AEH product pages
FN4471 Rev.3.00
Sep 21, 2018
Page 1 of 6
HS-OP470ARH, HS-OP470AEH
Ordering Information
ORDERING SMD NUMBER
PART NUMBER
(Note 2)
TEMP. RANGE
(°C)
PACKAGE
(RoHS Compliant)
PKG.
DWG. #
(Note 1)
5962R9853301VXC
5962R9853302VXC
5962R9853301V9A
5962R9853302V9A
N/A
HS9-OP470ARH-Q
HS9-OP470AEH-Q
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
14 Ld Flatpack
K14.A
14 Ld Flatpack
Die
K14.A
HS0-OP470ARH-Q
HS0-OP470AEH-Q
Die
HS0-OP470ARH/SAMPLE (Note 3)
HS0-OP470AEH/SAMPLE (Note 3)
HS9-OP470ARH-8
Die
N/A
Die
5962R9853301QXC
N/A
14 Ld Flatpack
14 Ld Flatpack
14 Ld Flatpack
K14.A
K14.A
K14.A
HS9-OP470ARH/PROTO (Note 3)
HS9-OP470AEH/PROTO (Note 3)
HS-OP470ARHEV1Z (Note 4)
N/A
HS-OP470ARHEV1Z
Evaluation Board
1. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed must
be used when ordering.
2. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb
and Pb-free soldering operations.
3. The /PROTO and /SAMPLE are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These parts are intended for
engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across the temperature range specified in the
DLA SMD and are in the same form and fit as the qualified device. The /SAMPLE die is capable of meeting the electrical limits and conditions
specified in the DLA SMD at +25°C only. The /SAMPLE is a die and does not receive 100% screening across the temperature range to the DLA SMD
electrical limits. These part types do not come with a certificate of conformance because there is no radiation assurance testing and they are not
DLA qualified devices.
4. Evaluation board uses the /PROTO parts. The /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE)
immunity.
FN4471 Rev.3.00
Sep 21, 2018
Page 2 of 6
HS-OP470ARH, HS-OP470AEH
PASSIVATION:
Die Characteristics
Type: Nitride (SI3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
DIE DIMENSIONS:
95mils x 99mils x 19 mils ±1mil
(2420µm x 2530µm x 483µm ±25.4µm)
WORST CASE CURRENT DENSITY:
METALLIZATION:
5
2
<2.0 x 10 A/cm
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
TRANSISTOR COUNT:
175
SUBSTRATE POTENTIAL (Powered Up):
PROCESS:
Unbiased
BACKSIDE FINISH:
Silicon
Bipolar Dielectric Isolation
Metallization Mask Layout
+IN2
V+
+IN1
-IN1
-IN2
OUT1
OUT4
OUT2
OUT3
-IN3
-IN4
+IN3
V-
+IN4
FN4471 Rev.3.00
Sep 21, 2018
Page 3 of 6
HS-OP470ARH, HS-OP470AEH
Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted.
Please visit our website to make sure you have the latest revision.
DATE
REVISION
FN4471.3
CHANGE
Sep 21, 2018
Added Related Literature section.
Updated the Ordering Information table by adding HS0-OP470AEH/SAMPLE and HS0-OP470AEH/PROTO
parts, removing part marking column, and adding Notes 3 and 4.
Added Revision History section.
Updated Disclaimer.
FN4471 Rev.3.00
Sep 21, 2018
Page 4 of 6
HS-OP470ARH, HS-OP470AEH
For the most recent package outline drawing, see K14.A.
Ceramic Metal Seal Flatpack Packages (Flatpack)
K14.A MIL-STD-1835 CDFP3-F14 (F-2A, CONFIGURATION B)
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
A
A
e
INCHES
MIN
MILLIMETERS
PIN NO. 1
ID AREA
SYMBOL
MAX
0.115
0.022
0.019
0.009
0.006
0.390
0.260
0.290
-
MIN
1.14
0.38
0.38
0.10
0.10
-
MAX
2.92
0.56
0.48
0.23
0.15
9.91
6.60
7.11
-
NOTES
D
A
b
0.045
0.015
0.015
0.004
0.004
-
-
-
-A-
-B-
S1
b1
c
-
-
b
c1
D
-
E1
3
-
0.004
Q
H
A - B
D
0.036
H
A - B
D
S
M
S
S
M
S
C
E
0.235
-
5.97
-
E
E1
E2
E3
e
3
-
-D-
A
0.125
0.030
3.18
0.76
-H-
-C-
-
-
7
-
L
E2
L
E3
E3
0.050 BSC
1.27 BSC
SEATING AND
BASE PLANE
c1
LEAD FINISH
k
0.008
0.270
0.026
0.005
-
0.015
0.370
0.045
-
0.20
6.86
0.66
0.13
-
0.38
9.40
1.14
-
2
-
L
BASE
METAL
Q
S1
M
N
8
6
-
(c)
b1
0.0015
0.04
M
M
(b)
14
14
-
SECTION A-A
Rev. 0 5/18/94
NOTES:
1. Index area: A notch or a pin one identification mark shall be located
adjacent to pin one and shall be located within the shaded area
shown. The manufacturer’s identification shall not be used as a pin
one identification mark. Alternately, a tab (dimension k) may be
used to identify pin one.
2. If a pin one identification mark is used in addition to a tab, the limits
of dimension k do not apply.
3. This dimension allows for off-center lid, meniscus, and glass over-
run.
4. Dimensions b1 and c1 apply to lead base metal only. Dimension M
applies to lead plating and finish thickness. The maximum limits of
lead dimensions b and c or M shall be measured at the centroid of
the finished lead surfaces, when solder dip or tin plate lead finish is
applied.
5. N is the maximum number of terminal positions.
6. Measure dimension S1 at all four corners.
7. For bottom-brazed lead packages, no organic or polymeric materi-
als shall be molded to the bottom of the package to cover the leads.
8. Dimension Q shall be measured at the point of exit (beyond the me-
niscus) of the lead from the body. Dimension Q minimum shall be
reduced by 0.0015 inch (0.038mm) maximum when solder dip lead
finish is applied.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
FN4471 Rev.3.00
Sep 21, 2018
Page 5 of 6
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(Rev.1.0 Mar 2020)
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