FS10VS-9 [RENESAS]
MITSUBISHI Nch POWER MOSFET; 三菱N沟道功率MOSFET![FS10VS-9](http://pdffile.icpdf.com/pdf1/p00157/img/icpdf/FS10V_870775_icpdf.jpg)
型号: | FS10VS-9 |
厂家: | ![]() |
描述: | MITSUBISHI Nch POWER MOSFET |
文件: | 总5页 (文件大小:82K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS10VS-9
HIGH-SPEED SWITCHING USE
FS10VS-9
OUTLINE DRAWING
Dimensions in mm
r
10.5MAX.
4.5
1.3
+0.3
–0
0
1
5
0.5
0.8
q
w e
w r
q GATE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................ 450V
¡rDS (ON) (MAX) .............................................................. 0.73Ω
¡ID ..........................................................................................10A
e
TO-220S
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
VGS = 0V
VDS = 0V
450
±30
V
V
10
A
IDM
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
30
A
PD
125
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
1.2
Tstg
—
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
450
±30
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
V
(BR) DSS Drain-source breakdown voltage
(BR) GSS Gate-source breakdown voltage
V
V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
—
—
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±10
1
µA
mA
V
—
—
VGS (th)
rDS (ON)
VDS (ON)
yfs
2
3
4
—
0.56
2.8
5.5
1100
135
20
0.73
3.7
—
Ω
—
V
3.3
—
S
Ciss
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 25V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
20
—
Rise time
—
30
—
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
95
—
Fall time
—
35
—
IS = 5A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
1.5
—
2.0
1.0
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
200
160
120
80
5
3
tw=10µs
100µs
2
101
7
5
3
1ms
2
100
7
10ms
DC
5
3
TC = 25°C
Single Pulse
2
40
10–1
7
5
0
0
50
100
150
200
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
2
CASE TEMPERATURE
T
C
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 20V
10V
20
16
12
8
10
8
V
GS=20V
10V
6V
PD=
125W
8V
8V
T
C
= 25°C
Pulse Test
6V
PD
= 125W
6
5V
4
5V
4
2
T
C = 25°C
Pulse Test
0
0
0
10
20
30
40
50
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-9
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
1.6
1.2
0.8
40
32
24
16
8
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
VGS = 10V
20V
ID
= 15A
10A
5A
0.4
0
0
0
4
8
12
16
20
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
8
101
7
5
VDS = 10V
T
C
= 25°C
DS = 50V
Pulse Test
TC=25°C
Pulse Test
V
3
2
75°C
125°C
100
7
5
3
2
4
0
10–1
0
4
8
12
16
20
10–1
2
3
5 7 100
2
3
5 7 101
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
103
7
5
Tch = 25°C
Ciss
103
7
V
DD = 200V
GS = 10V
V
R
GEN = RGS = 50Ω
5
3
2
3
2
Coss
Crss
t
d(off)
102
7
102
7
5
5
t
t
f
r
3
2
3
2
Tch = 25°C
f = 1MHz
101
7
td(on)
V
GS = 0V
5
101
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
10–1
2
3
5 7 100
2
3
5 7 101
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-9
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
40
32
24
16
8
VGS = 0V
Pulse Test
Tch = 25°C
ID = 10A
TC=125°C
VDS = 100V
200V
400V
25°C
75°C
4
0
0
0
20
40
60
80
100
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5
5.0
4.0
3.0
2.0
1.0
0
VDS = 10V
ID = 1mA
VGS = 10V
ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 0V
ID = 1mA
5
3
2
D=1
0.5
100
7
5
0.2
0.1
3
PDM
tw
2
10–1
7
0.05
T
5
0.02
tw
D=
0.01
3
T
2
Single Pulse
10–2
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Feb.1999
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