BCR5FM-14LBBB0 [RENESAS]

700V - 5A - Triac Medium Power Use; 700V - 5A - 三端双向可控硅中等功率应用


型号：	BCR5FM-14LBBB0
厂家：	RENESAS TECHNOLOGY CORP
描述：	700V - 5A - Triac Medium Power Use 700V - 5A - 三端双向可控硅中等功率应用可控硅
文件：	总4页 (文件大小：62K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Datasheet

BCR5FM-14LB

700V - 5A - Triac

R07DS0957EJ0001

Rev.0.01

Nov 28, 2012

Medium Power Use

Features



I_{T (RMS)}: 5 A

_DRM: 800 V (Tj = 125 °C)

Tj: 150 °C

_FGTI, I_RGTI, I_RGT: 30 mA



Insulated Type

Planar Passivation Type

Viso: 2000 V

Outline

RENESAS Package code: PRSS0003AG-A

(Package name: TO-220FP)

1. T Terminal

2. T Terminal

3. Gate Terminal

Applications

Switching mode power supply, Washing machine, small motor controller, copying machine, electric heater control, and

other general controlling devices

Maximum Ratings

Voltage class

Conditions

Parameter

Symbol

Unit

Repetitive peak off-state voltage^Note1

V_DRM

800

700

840

Tj = 125C

Tj = 150C

Non-repetitive peak off-state voltage^Note1

V_DSM

R07DS0957EJ0001 Rev.0.01

Nov 28, 2012

Page 1 of 3

BCR5FM-14LB

Preliminary

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

Surge on-state current

I²t for fusion

I_{T (RMS)}

Commercial frequency, sine full wave

360 conduction, Tc = 121C

I_TSM

I²t

60 Hz sinewave 1 full cycle,

peak value, non-repetitive

10.4

A²s

Value corresponding to 1 cycle of half

wave 60 Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

P_GM

P_{G (AV)}

V_GM

I_GM

0.3

Peak gate current

Junction Temperature

Storage temperature

Mass

–40 to +150

1.9

C

Tstg

—

Typical value

Isolation voltage ^Note5

Viso

2000

Ta = 25C, AC 1 minute

T₁ T₂ G terminal to case

Electrical Characteristics

Parameter

Repetitive peak off-state current

On-state voltage

Symbol

Min.

—

Typ.

—

Max.

Unit

Test conditions

I_DRM

V_TM

2.0

1.8

Tj = 150C, V_DRMapplied

—

Tc = 25C, I_TM= 7A,

instantaneous measurement

Gate trigger voltage^Note2









V_FGT

—

1.5

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 



V_RGT







Gate trigger curent^Note2

I_FGT

I_RGT

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 







I_RGT



Gate non-trigger voltage

Thermal resistance

V_GD

0.2

0.1

—

Tj = 125C, V_D= 1/2 V_DRM

Tj = 150C, V_D= 1/2 V_DRM

Junction to case^Note3

Tj = 125C

R_{th (j-c)}

3.8

—

C/W

V/s

Critical-rate of rise of off-state

commutation voltage^Note4

(dv/dt)c

—

Tj = 150C

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance R_{th (c-f)}in case of greasing is 0.5C /W.

4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.

5. Make sure that your finished product containing this device meets your safe isolation requirements.

For safety, it's advisable that heatsink is electrically floating.

Commutating voltage and current waveforms

Test conditions

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125/150C

2. Rate of decay of on-state commutating current

(di/dt)c = –2.5 A/ms

(di/dt)c

Time

Main Current

Main Voltage

3. Peak off-state voltage

V_D= 400 V

(dv/dt)c

R07DS0957EJ0001 Rev.0.01

Nov 28, 2012

Page 2 of 3

BCR5FM-14LB

Preliminary

Package Dimensions

Package Name

TO-220FP

JEITA Package Code

RENESAS Code

PRSS0003AG-A

Previous Code

MASS[Typ.]

1.9g

Unit: mm

10.16 ± 0.20

2.54 ± 0.20

3.18 ± 0.10

1.28 ± 0.30

Max 1.47

2.76 ± 0.20

0.80 ± 0.20

0.50

5.08 ± 0.20

Ordering Information

Orderable Part Number

BCR5FM-14LB#BB0

Packing

Quantity

Remark

Tube

50 pcs. Straight type

50 pcs. A8 Lead form

BCR5FM-14LB-A8#BB0

Note: Please confirm the specification about the shipping in detail.

R07DS0957EJ0001 Rev.0.01

Nov 28, 2012

Page 3 of 3

Notice

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Colophon 2.2

BCR5FM-14LBBB0 [RENESAS]

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