BCR5FM-14LJ-A8BB0 [RENESAS]
700V - 5A - Triac Medium Power Use; 700V - 5A - 三端双向可控硅中等功率应用
| 型号： | BCR5FM-14LJ-A8BB0 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 700V - 5A - Triac Medium Power Use |
| 文件： | 总8页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
BCR5FM-14LJ
700V - 5A - Triac
R07DS0961EJ0100
Rev.1.00
Nov 19, 2012
Medium Power Use
Features
IT (RMS) :5 A
DRM : 800 V (Tj = 125°C)
Tj: 150°C
FGTI, IRGTI, IRGT III : 30 mA
Insulated Type
Planar Passivation Type
Viso: 2000 V
V
I
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T Terminal
1
2. T Terminal
2
3. Gate Terminal
3
1
1
2
3
Applications
Switching mode power supply, Washing machine, small motor controller, copying machine, electric heater control, and
other general controlling devices
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
Conditions
14
Repetitive peak off-state voltageNote1
VDRM
800
700
840
V
V
V
Tj = 125C
Tj = 150C
Non-repetitive peak off-state voltageNote1
VDSM
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
ITSM
I2t
5
A
Commercial frequency, sine full wave
360 conduction, Tc = 113C
Surge on-state current
I2t for fusion
50
A
60 Hz sinewave 1 full cycle, peak
value, non-repetitive
10.4
A2s
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
W
W
V
0.5
10
2
Peak gate current
A
Junction Temperature
Storage temperature
Mass
Tj
–40 to +150
–40 to +150
1.9
C
C
g
Tstg
—
Typical value
Isolation voltage Note5
Viso
2000
V
Ta = 25C, AC 1 minute,
T1 T2 G terminal to case
R07DS0961EJ0100 Rev.1.00
Nov 19, 2012
Page 1 of 7
BCR5FM-14LJ
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
Min.
—
Typ.
—
Max.
2.0
Unit
mA
V
Test conditions
IDRM
VTM
Tj = 150C, VDRM applied
—
—
1.8
Tc = 25C, ITM = 7A,
instantaneous measurement
Gate trigger voltageNote2
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
VRGT
VRGT
V
Gate trigger curentNote2
IFGT
IRGT
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
30
IRGT
30
Gate non-trigger voltage
Thermal resistance
VGD
0.2/0.1
—
—
—
—
—
4.9
—
V
Tj = 125C/150C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125C
Rth (j-c)
—
5
C/W
V/s
V/s
Critical-rate of rise of off-state
commutation voltageNote4
Notes: 1. Gate open.
(dv/dt)c
1
—
Tj = 150C
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125C/150C
2. Rate of rise of off-state commutating voltage
(dv/dt)c = 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
(di/dt)c
Time
Time
Main Current
Main Voltage
(dv/dt)c
V
D
R07DS0961EJ0100 Rev.1.00
Nov 19, 2012
Page 2 of 7
BCR5FM-14LJ
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
100
80
60
40
20
0
101
Tj = 150°C
100
Tj = 25°C
10−1
0
1
2
3
4
100
101
102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
103
102
101
Typical Example
V
= 10V
GM
P
= 5W
GM
101
P
=
0.5W
G(AV)
I
= 2A
GM
V
GT
= 1.5V
100
I
FGT I
I
RGT I
I
RGT III
10−1
I
V
= 0.1V
I , I
FGT I RGT III
RGT I
GD
101
102
103
104
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
103
104
103
102
101
6
Typical Example
5
4
3
2
1
0
10−1
100
101
102
–40
0
40
80
120
160
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0961EJ0100 Rev.1.00
Nov 19, 2012
Page 3 of 7
BCR5FM-14LJ
Preliminary
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
103
102
8
No Fins
7
6
5
4
3
2
1
0
101
100
360° Conduction
Resistive,
inductive loads
10−1
101
102
103
104
105
0
1
2
3
4
5
6
7
8
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
120
100
80
160
140
120
100
80
Curves apply regardless
of conduction angle
60 × 60 × t2.3
100 × 100 × t2.3
120 × 120 × t2.3
60
60
Curves apply regardless
All fins are
40
40
of conduction angle
360° Conduction
black painted
Resistive, inductive loads
aluminum
20
20 Resistive,
Natural convection
inductive loads
and greased
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
106
160
140
120
100
80
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
105
104
103
102
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
–40
0
40
80
120
160
RMS On-State Current (A)
Junction Temperature (°C)
R07DS0961EJ0100 Rev.1.00
Nov 19, 2012
Page 4 of 7
BCR5FM-14LJ
Preliminary
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
102
103
102
101
100
Distribution
Distribution
–
Typical Example
+
T
, G
Typical Example
2
101
+
–
+
–
T
T
, G
, G
2
Typical Example
40 80
VD=12V
2
100
–40
0
40
80
120
160
–40
0
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Junction Temperature
160
140
120
100
80
160
140
120
100
80
60
40
20
0
III Quadrant
I Quadrant
60
40
Typical Example
Tj = 125°C
20
Typical Example
40
0
–40
101
102
103
104
0
80
120
160
Rate of Rise of Off-State Voltage (V/μs)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
102
160
140
Typical Example
Tj = 125°C
Time
Main Voltage
(dv/dt)c
Main Current
V
D
I = 4A
T
τ = 500μs
(di/dt)c
I
T
120
τ
III Quadrant
Time
V = 200V
D
f = 3Hz
100
80
101
Minimum
Value
III Quadrant
I Quadrant
60
40
20
0
I Quadrant
101
Typical Example
Tj = 150°C
100
100
102
103
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0961EJ0100 Rev.1.00
Nov 19, 2012
Page 5 of 7
BCR5FM-14LJ
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
Commutation Characteristics (Tj=150°C)
102
101
100
103
102
101
Time
Typical Example
Tj = 150°C
Main Voltage
(dv/dt)c
Main Current
Typical Example
V
D
I
RGT III
I = 4A
T
τ = 500μs
(di/dt)c
Time
I
T
τ
I
RGT I
V
= 200V
D
f = 3Hz
III Quadrant
I
FGT I
I Quadrant
Minimum
Value
100
101
102
100
101
Gate Current Pulse Width (μs)
102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
Recommended Circuit Values Around The Triac
Load
C1
R1
A
A
6V
6V
C0 R0
330Ω
330Ω
V
V
C
R
= 0.1 to 0.47μF
= 47 to 100Ω
C
R
= 0.1μF
= 100Ω
1
1
0
0
Test Procedure I
Test Procedure II
6Ω
A
6V
330Ω
V
Test Procedure III
R07DS0961EJ0100 Rev.1.00
Nov 19, 2012
Page 6 of 7
BCR5FM-14LJ
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code
RENESAS Code
PRSS0003AG-A
Previous Code
MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
3.18 ± 0.10
1.28 ± 0.30
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
5.08 ± 0.20
Ordering Information
Orderable Part Number
BCR5FM-14LJ#BB0
Packing
Quantity
Remark
Tube
Tube
50 pcs. Straight type
50 pcs. A8 Lead form
BCR5FM-14LJ-A8#BB0
Note: Please confirm the specification about the shipping in detail.
R07DS0961EJ0100 Rev.1.00
Nov 19, 2012
Page 7 of 7
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
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Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
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Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
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13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
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