BCR5CM-12LB-A8BB0 [RENESAS]
600V - 5A - Triac Medium Power Use; 600V - 5A - 三端双向可控硅中等功率应用
| 型号： | BCR5CM-12LB-A8BB0 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 600V - 5A - Triac Medium Power Use |
| 文件： | 总8页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
BCR5CM-12LB
R07DS1026EJ0100
Rev.1.00
600V - 5A - Triac
Medium Power Use
Feb 25, 2013
Features
IT(RMS) : 5 A
DRM : 600 V
FGT I, IRGT I, IRGT III : 20 mA (10 mA)Note6
Non-Insulated Type
Planar Passivation Type
V
I
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
2, 4
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
3
1
1
2
3
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, solenoid driver, small motor control, copying
machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
600
720
V
V
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT(RMS)
ITSM
I2t
5
A
Commercial frequency, sine full wave
360° conduction, Tc = 128°CNote3
Surge on-state current
I2t for fusing
50
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
10.4
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG(AV)
VGM
IGM
3
W
W
V
0.3
10
2
Peak gate current
A
Junction temperature
Storage temperature
Mass
Tj
– 40 to +150
– 40 to +150
2.1
°C
°C
g
Tstg
—
Typical value
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
Page 1 of 7
BCR5CM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
V
Test conditions
Tj = 150°C, VDRM applied
VTM
—
—
1.8
Tc = 25°C, ITM = 7 A,
Instantaneous measurement
Gate trigger voltageNote2
I
II
III
I
VFGT
—
—
—
—
—
—
—
—
—
1.5
1.5
V
V
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330
I
VRGT
I
VRGT
—
1.5
V
III
Gate trigger currentNote2
IFGT
—
20Note6
20Note6
20Note6
—
mA
mA
mA
V
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330
I
II
III
IRGT
—
I
IRGT
—
III
Gate non-trigger voltage
Thermal resistance
VGD
0.2/0.1
Tj = 125°C/150°C,
VD = 1/2 VDRM
Junction to caseNote3 Note4
Rth(j-c)
—
—
—
3.0
—
°C/W
Critical-rate of rise of off-state
commutating voltageNote5
(dv/dt)c
5/1
V/s
Tj = 125°C/150°C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
6. High sensitivity (IGT 10 mA) is also available. (IGT item: 1)
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
(di/dt)c
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
Page 2 of 7
BCR5CM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
7
5
100
90
80
70
60
50
40
30
20
10
0
3
2
101
7
5
Tj = 150°C
3
2
100
7
5
Tj = 25°C
3
2
10–1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
100
2
3 4 5 7 101
2
3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
103
7
5
5
Typical Example
3
2
V
= 10V
GM
3
2
I
RGT III
101
7
5
I
RGT I
P
= 3W
= 2A
GM
102
7
5
P
G(AV)
= 0.3W
I
3
2
GM
V
= 1.5V
GT
3
2
100
7
5
FGT I
I
101
I
= 20mA
GT
7
5
3
2
3
2
10–1
7
V
= 0.1V
GD
5
100
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
–
0
60 –40 –20
20 40 60 80 100120140160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102 2 3 5 7 103 2 3
4.0
5
103
Typical Example
7
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
5
4
3
2
102
7
5
4
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
–
60
–
40
–
20
0
20 40 60 80 100120140160
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
Page 3 of 7
BCR5CM-12LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
8
7
6
5
4
3
2
1
0
160
140
120
100
80
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
60
40
360° Conduction
Resistive,
inductive loads
20
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
120
100
80
160
140
120
100
80
All fins are black painted
aluminum and greased
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
Curves apply
regardless of
60
60
conduction angle
Resistive,
40
40
inductive loads
Natural convection
20
20
0
0
0
1
2
3
4
5
6
7
8
0
0.5
1.0
1.5 2.0
2.5
3.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
106
102
7
7
5
Typical Example
V
D
= 12V
3
2
5
4
Distribution
105
3
2
7
5
Typical Example
3
2
104
101
7
7
5
3
2
5
4
103
3
2
7
5
3
2
102
100
–
60
–
40
–
20
0
20 40 60 80 100120140160
–
60
–
40
–
20
0
20 40 60 80 100120140160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
Page 4 of 7
BCR5CM-12LB
Preliminary
Latching Current vs.
Junction Temperature
Breakover Voltage vs.
Junction Temperature
103
7
5
160
140
120
100
80
Typical Example
+
–
+
, G
–
, G
T
T
2
Typical Example
2
3
2
Distribution
–
+
T
2
, G
Typical Example
102
7
5
3
2
60
101
7
5
40
3
2
20
100
0
0
20 40 60 80 100120140160
0 20 40 60 80 100120140160
20
–
60
–
40
–
20
–
60
–
40
–
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
160
Typical Example
Tj = 150°C
Typical Example
Tj = 125°C
140
120
100
80
140
120
100
80
III Quadrant
III Quadrant
60
60
I Quadrant
40
I Quadrant
40
20
20
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
7
7
Time
Time
Main Voltage
Typical Example
Tj = 125°C
Main Voltage
Typical Example
Tj = 150°C
5
5
(dv/dt)c
(dv/dt)c
V
D
V
D
Main Current
Main Current
I = 4A
T
τ = 500μs
I = 4A
T
τ = 500μs
3
2
3
2
(di/dt)c
Time
(di/dt)c
Time
I
T
I
T
τ
τ
V
= 200V
V = 200V
D
f = 3Hz
D
f = 3Hz
101
101
III Quadrant
I Quadrant
7
5
7
5
I Quadrant
Minimum
Characteristics
Value
3
2
3
2
Minimum
Characteristics
Value
100
7
100
7
III Quadrant
5 7 101
100
2
3
2
3
5 7 102
100
2
3
5 7 101
2
3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
Page 5 of 7
BCR5CM-12LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
Typical Example
I
RGT III
5
4
3
I
RGT I
2
102
7
I
FGT I
5
4
3
2
101
2
100
2
3 4 5 7 101
2
3
4
5 7 10
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
Recommended Circuit Values Around The Triac
Load
C1
R1
A
A
C0
R0
6V
6V
330Ω
330Ω
V
V
C
R
= 0.1 to 0.47μF
= 47 to 100Ω
C
R
= 0.1μF
= 100Ω
1
1
0
0
Test Procedure I
Test Procedure II
6Ω
A
6V
330Ω
V
Test Procedure III
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
Page 6 of 7
BCR5CM-12LB
Preliminary
Package Dimensions
Package Name
TO-220AB
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AG-A
Previous Code
TO-220ABS
MASS[Typ.]
2.1g
Unit: mm
4.5 0.2
9.9 0.2
+ 0.10
– 0.05
1.30
φ3.6 0.2
1.62 Max
0.80 0.10
2.6 Max
+ 0.10
– 0.05
2.54
2.54
0.50
10.0 0.2
Ordering Information
Orderable Part Number
BCR5CM-12LB#BB0
Packing
Quantity
50 pcs.
50 pcs.
Remark
Tube
Tube
Straight type
A8 Lead form
BCR5CM-12LB-A8#BB0
Note: Please confirm the specification about the shipping in detail.
R07DS1026EJ0100 Rev.1.00
Feb 25, 2013
Page 7 of 7
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
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