BCR16LM-12LB-A8 [RENESAS]
600V, 16A, TRIAC, TO-220AB, TO-220FL, 3 PIN;型号: | BCR16LM-12LB-A8 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | 600V, 16A, TRIAC, TO-220AB, TO-220FL, 3 PIN 局域网 栅 三端双向交流开关 栅极 |
文件: | 总10页 (文件大小:137K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary
BCR16LM-12LB
Triac
REJ03G1805-0100
Rev.1.00
Medium Power Use
Jul 22, 2009
Features
•
•
•
•
IT (RMS) : 16 A
VDRM : 600 V
IFGT I, IRGT I, IRGT III : 30 mA
•
The Product guaranteed maximum junction
temperature 150°C
Insulated Type
Planar Passivation Type
•
•
V
iso : 1800 V
Outline
RENESAS Package code: PRSS0003AF-A)
Package name: TO-220FL)
(
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Switching mode power supply, copying machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
VDRM
VDSM
600
720
V
V
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
ITSM
I2t
16
A
Commercial frequency, sine full wave
360°conduction, Tc = 87°C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Surge on-state current
I2t for fusion
160
A
106.5
A2s
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
0.5
10
2
W
W
V
Peak gate current
A
Junction Temperature
Storage temperature
Mass
Tj
Tstg
—
–40 to +150
–40 to +150
1.5
°C
°C
g
Typical value
Isolation voltage
Viso
1800
V
Ta = 25°C, AC 1 minute,
T1 • T2 • G terminal to case
Notes: 1. Gate open.
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 1 of 7
BCR16LM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
V
Test conditions
Tj = 150°C, VDRM applied
VTM
—
—
1.5
Tc = 25°C, ITM = 25 A,
instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
Ι
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
VRGT
Ι
VRGT
V
ΙΙΙ
Gate trigger curentNote2
IFGT
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
ΙΙ
ΙΙΙ
IRGT
30
Ι
IRGT
30
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
VGD
0.2/0.1
—
—
—
—
—
3.5
—
V
Tj = 125°C/150°C, VD = 1/2 VDRM
Junction to caseNote3
Rth (j-c)
(dv/dt)c
°C/W
V/µs
Critical-rate of rise of off-state
commutation voltageNote4
10/1
Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125°C/150°C
(di/dt)c
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0 A/ms
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 2 of 7
BCR16LM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
7
5
200
180
160
140
120
100
80
3
2
102
7
5
Tj = 150°C
3
2
101
7
60
5
40
Tj = 25°C
3
2
20
100
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
100
2
3
4 5
7
101
2
3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
103
7
3
2
Typical Example
V
V
GM = 10V
GT = 1.5V
P
G(AV) = 0.5W
5
4
P
GM = 5W
GM = 2A
101
7
5
3
2
IRGT III
I
3
2
102
7
100
7
IFGT I, IRGT I
5
5
4
3
2
3
2
10–1
7
I
FGT I, IRGT I, IRGT III
VGD = 0.1V
5
101
–60–40–20
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
0 20 40 60 80 100120140160
Gate Current (mA)
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Gate Trigger Voltage vs.
Junction Temperature
102
4.0
103
104
103
7
Typical Example
3.5
3.0
2.5
5
4
3
2
102
7
2.0
1.5
1.0
0.5
0.0
5
4
3
2
101
–60–40–20
10–1
100
101
102
0
20 40 60 80 100120140160
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 3 of 7
BCR16LM-12LB
Preliminary
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
103
7
5
40
No Fins
35
30
25
20
15
10
5
3
2
102
360° Conduction
Resistive,
inductive loads
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0
1012 3 571022 3 571032 3 571042 3 57105
0
2
4
6
8 10 12 14 16 18 20
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Case Temperature vs.
RMS On-State Current
160
140
120
100
80
160
140
120
100
80
All fins are black painted
aluminum and greased
Curves apply regardless
of conduction angle
120 120 t2.3
100 100 t2.3
60 60 t2.3
60
60
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
40
40
360° Conduction
Resistive,
inductive loads
20
20
0
0
0
2
4
6
8 10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
140
120
100
80
5
3
2
105
7
5
3
2
104
7
5
Typical Example
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
3
2
60
103
7
5
40
3
2
20
0
102
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
–60–40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 4 of 7
BCR16LM-12LB
Preliminary
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
103
7
103
7
5
Typical Example
5
4
Distribution
–
, G
+
3
2
T
2
Typical Example
3
2
102
7
5
102
7
3
2
101
7
5
4
5
3
2
+
–
+
–
3
2
T
T
, G
, G
2
Typical Example
40 80
2
101
–60–40–20
100
–40
0
20 40 60 80 100120140160
0
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
80
160
Typical Example
Tj = 125°C
Typical Example
140
120
100
80
III Quadrant
60
60
40
40
I Quadrant
20
20
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–60–40–20
0 20 40 60 80 100120140160
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
102
Time
Main Voltage
Typical Example
Tj = 125°C
Typical Example
Tj = 150°C
7
5
(dv/dt)c
V
D
140
120
100
80
Main Current
I = 4A
T
τ = 500µs
(di/dt)c
I
T
3
2
τ
Time
V
= 200V
D
f = 3Hz
101
III Quadrant
7
5
Minimum
Characteristics
Value
60
I Quadrant
3
2
40
I Quadrant
III Quadrant
20
100
7
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
3
5
7 101
2
5 7 102
2 3
3
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Rise of Off-State Voltage (V/µs)
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 5 of 7
BCR16LM-12LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
Commutation Characteristics (Tj=150°C)
102
103
7
Time
Typical Example Main Voltage
Typical Example
7
5
(dv/dt)c
V
D
Tj = 150°C
I
FGT I
5
4
Main Current
I = 4A
T
τ = 500µs
(di/dt)c
I
T
3
2
τ
3
2
IRGT I
Time
I
RGT III
V
= 200V
D
f = 3Hz
101
102
7
7
5
I Quadrant
5
4
III Quadrant
3
2
3
2
Minimum
Characteristics
Value
100
7
101
100
2
3 4 5 7 101
2
3 4 5 7 102
3
5
7 101
2
5 7 102
2
3
3
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
Recommended Circuit Values Around The Triac
Load
C1
R1
A
A
6V
6V
C0 R0
330Ω
330Ω
V
V
C
R
= 0.1 to 0.47µF
= 47 to 100Ω
C
R
= 0.1µF
= 100Ω
1
1
0
0
Test Procedure II
Test Procedure I
6Ω
A
6V
330Ω
V
Test Procedure III
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 6 of 7
BCR16LM-12LB
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
RENESAS Code
PRSS0003AF-A
Previous Code
TO-220FL
MASS[Typ.]
1.5g
Unit: mm
10.0 0.3
2.8 0.2
φ 3.2 0.2
1.15 0.2
1.15 0.2
0.75 0.15
2.54 0.25
0.40 0.15
2.54 0.25
Order Code
Standard order
code example
Lead form
Standard packing
Quantity
Standard order code
Straight type
Lead form
Plastic Magazine (Tube)
Plastic Magazine (Tube)
50 Type name
BCR16LM-12LB
50 Type name – Lead forming code
BCR16LM-12LB-A8
Note : Please confirm the specification about the shipping in detail.
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
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but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
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destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
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document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
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On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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All information included in this document is current as of the date this document is issued. Such information, however, is
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9.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
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characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
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guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
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