BCR16LM-16LH [RENESAS]
Triac Medium Power Use; 三端双向可控硅中功率使用
| 型号： | BCR16LM-16LH |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Triac Medium Power Use |
| 文件： | 总8页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
BCR16LM-16LH
R07DS0504EJ0100
Rev.1.00
Triac
Medium Power Use
Jul 07, 2011
Features
IT (RMS) : 16 A
DRM : 800 V
FGTI, IRGTI, IRGT III : 50 mA or 35mA (IGT item:1)
High Commutation
iso : 1800V
The Product guaranteed maximum junction
temperature 150C
Insulated Type
Planar Type
UL Recognized: File No. E223904
V
I
V
Outline
RENESAS Package code: PRSS0003AF-A)
Package name: TO-220FL)
(
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Switching mode power supply, motor control, heater control, and other general purpose AC power control applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
16
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
VDRM
VDSM
800
960
V
V
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
ITSM
I2t
16
A
Commercial frequency, sine full wave
360 conduction, Tc = 87C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Surge on-state current
I2t for fusion
160
A
106.5
A2s
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
0.5
10
2
W
W
V
Peak gate current
A
Junction Temperature
Storage temperature
Mass
Tj
Tstg
—
–40 to +150
–40 to +150
2.0
C
C
g
Typical value
Isolation voltage
Viso
1800
V
Ta = 25C, AC 1 minute,
T1 T2 G terminal to case
R07DS0504EJ0100 Rev.1.00
Jul 07, 2011
Page 1 of 7
BCR16LM-16LH
Preliminary
Electrical Characteristics
BCR16LM-16LH-1
BCR16LM-16LH
Parameter
Symbol
Unit
Test conditions
(IGT item : 1)
Min.
Typ. Max. Min. Typ. Max.
Tj = 125C
VDRM applied
Tj = 150C
VDRM applied
Repetitive peak off-state current
IDRM
—
—
—
—
2.0
5.0
1.5
—
—
—
—
—
—
2.0
5.0
1.5
mA
mA
V
—
—
Tc = 25C, ITM = 25 A
instantaneous
On-state voltage
VTM
measurement
Gate trigger voltageNote2
Gate trigger curentNote2
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
35
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
50
V
V
Tj = 25C, VD = 6 V
RL = 6 , RG = 330
VRGT
VRGT
V
Tj = 25C, VD = 6 V
RL = 6 , RG = 330
IFGT
IRGT
mA
mA
mA
35
50
IRGT
35
50
Tj = 125C
Gate non-trigger voltage
VGD
0.2
—
—
0.2
—
—
V
VD = 1/2 VDRM
Tj = 150C
0.1
—
—
0.1
—
—
V
VD = 1/2 VDRM
Junction to caseNote3
3.5 C/W
Thermal resistance
Rth (j-c)
—
9
—
—
3.5
—
—
—
—
Tj = 125C
A/ms
Critical-rate of decay of on-state (di/dt)c
commutating current Note4
15
—
(dv/dt)c < 100 V/s
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125C
2. Peak off-state voltage
VD = 400 V
(di/dt)c
Time
Main Current
Main Voltage
Time
2. Rate of rise of off-state commutating voltage
(dv/dt)c < 100 V/s
(dv/dt)c
V
D
R07DS0504EJ0100 Rev.1.00
Jul 07, 2011
Page 2 of 7
BCR16LM-16LH
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
102
101
100
200
160
120
80
Tj = 150°C
Tj = 25°C
40
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
100
101
102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics
VGM = 10V
103
102
101
Typical Example
101
PGM = 5W
IGM = 2A
P
G(AV) =
0.5W
I
, I
RGT I RGT III
V
GT = 1.5V
I
FGT I
100
IFGT I, IRGT I, IRGT III
VGD = 0.1V
10−1
101
102
103
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
103
104
103
102
101
4
Typical Example
3
2
1
0
10–1
100
101
102
–40
0
40
80
120
160
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0504EJ0100 Rev.1.00
Jul 07, 2011
Page 3 of 7
BCR16LM-16LH
Preliminary
Allowable Case Temperature vs.
Maximum On-State Power Dissipation
RMS On-State Current
160
140
120
100
80
40
35
30
25
20
15
10
5
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
60
40
360° Conduction
20
Resistive,
inductive loads
0
0
0
4
8
12
16
20
0
4
8
12
16
20
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
120
100
80
160
140
120
100
80
All fins are black painted
aluminum and greased
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
120 120 t2.3
100 100 t2.3
60 60 t2.3
60
60
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
40
40
20
20
0
0
0
1
2
3
4
0
4
8
12
16
20
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
106
103
102
101
Typical Example
Typical Example
105
104
103
102
–40
0
40
80
120
160
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS0504EJ0100 Rev.1.00
Jul 07, 2011
Page 4 of 7
BCR16LM-16LH
Preliminary
Latching Current vs.
Junction Temperature
Breakover Voltage vs.
Junction Temperature
103
102
101
160
140
120
100
80
Typical Example
Distribution
–
, G
Typical Example
+
T
2
60
40
+
–
+
–
T
T
, G
, G
2
2
20
Typical Example
40 80
100
0
–40
–40
0
120
160
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
160
Typical Example
Typical Example
Tj = 125°C
Tj = 150°C
140
120
100
80
140
120
100
80
III Quadrant
III Quadrant
I Quadrant
I Quadrant
60
60
40
40
20
20
0
0
101
102
103
104
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
102
102
Time
Main Voltage
(dv/dt)c
Main Current
Time
Main Voltage
(dv/dt)c
Main Current
V
D
V
D
III Quadrant
III Quadrant
(di/dt)c
Time
I
T
(di/dt)c
I
T
τ
τ
Time
Minimum
Value
(IGTitem1)
101
101
I Quadrant
I Quadrant
Typical Example
Tj = 150°C
Typical Example
Tj = 125°C
= 4A
I
T
= 4A
I
Minimum
Value
T
τ = 500μs,
= 200V
τ = 500μs,
= 200V
V
D
V
D
f = 3Hz
f = 3Hz
100
100
100
100
101
102
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0504EJ0100 Rev.1.00
Jul 07, 2011
Page 5 of 7
BCR16LM-16LH
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
103
Typical Example
I
FGT I
I
RGT I
A
A
I
6V
6V
RGT III
330Ω
330Ω
V
V
102
Test Procedure I
6Ω
Test Procedure II
A
6V
101
100
330Ω
V
101
Gate Current Pulse Width (μs)
102
Test Procedure III
R07DS0504EJ0100 Rev.1.00
Jul 07, 2011
Page 6 of 7
BCR16LM-16LH
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
⎯
RENESAS Code
PRSS0003AF-A
Previous Code
TO-220FL
MASS[Typ.]
1.5g
Unit: mm
10.0 ± 0.3
2.8 ± 0.2
3.2 ± 0.2
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.40 ± 0.15
2.54 ± 0.25
Ordering Information
Orderable Part Number
BCR16LM-16LH#B00
Packing
Quantity
50 pcs. Straight type
Remark
Tube
Tube
Tube
Tube
BCR16LM-16LH-1#B00
BCR16LM-16LH-A8#B00
BCR16LM-16LH-1A8#B00
50 pcs. Straight type, IGT item;1
50 pcs. A8 Lead form
50 pcs. A8 Lead form, IGT item;1
Note : Please confirm the specification about the shipping in detail.
R07DS0504EJ0100 Rev.1.00
Jul 07, 2011
Page 7 of 7
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
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technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
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the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
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(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
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http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
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Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2011 Renesas Electronics Corporation. All rights reserved.
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