概述
数据手册BCR16FM-14LJBB0 概述
700V - 16A - Triac Medium Power Use 700V - 16A - 三端双向可控硅中等功率应用
BCR16FM-14LJBB0 数据手册
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PDF下载Preliminary Datasheet
BCR16FM-14LJ
700V - 16A - Triac
R07DS0959EJ0200
Rev.2.00
Mar 01, 2013
Medium Power Use
Features
IT (RMS) : 16 A
DRM : 800 V (Tj = 125 °C)
Tj: 150 °C
FGTI, IRGTI, IRGT: 30 mA
Viso: 2000 V
Insulated Type
Planar Passivation Type
V
I
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T Terminal
1
2. T Terminal
2
3. Gate Terminal
3
1
1
2
3
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices.
Maximum Ratings
Voltage class
Conditions
Parameter
Symbol
Unit
14
Repetitive peak off-state voltageNote1
VDRM
800
700
840
V
V
V
Tj = 125C
Tj = 150C
Non-repetitive peak off-state voltageNote1
VDSM
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
ITSM
I2t
16
A
Commercial frequency, sine full wave
360 conduction, Tc = 87C
Surge on-state current
I2t for fusion
160
A
60 Hz sinewave 1 full cycle,
peak value, non-repetitive
106.5
A2s
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
W
W
V
0.5
10
2
Peak gate current
A
Junction Temperature
Storage temperature
Mass
Tj
–40 to +150
–40 to +150
1.9
C
C
g
Tstg
—
Typical value
Isolation voltage Note5
Viso
2000
V
Ta = 25C, AC 1 minute
T1 T2 G terminal to case
R07DS0959EJ0200 Rev.2.00
Mar 01, 2013
Page 1 of 7
BCR16FM-14LJ
Preliminary
Electrical Characteristics
Rated value
Parameter
Symbol
Unit
Test conditions
Min.
—
Typ.
—
Max.
2.0
Repetitive peak off-state current
On-state voltage
IDRM
VTM
mA
V
Tj = 150C, VDRM applied
—
—
1.5
Tc = 25C, ITM = 25A,
instantaneous measurement
Gate trigger voltageNote2
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
VRGT
VRGT
V
Gate trigger curentNote2
IFGT
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
IRGT
30
IRGT
30
Gate non-trigger voltage
Thermal resistance
VGD
0.2
0.1
—
10
1
—
—
—
—
—
—
—
V
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125C
Rth (j-c)
3.5
—
C/W
V/s
Critical-rate of rise of off-state
commutation voltageNote4
(dv/dt)c
—
Tj = 150C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0A/ms
(di/dt)c
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
R07DS0959EJ0200 Rev.2.00
Mar 01, 2013
Page 2 of 7
BCR16FM-14LJ
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
102
101
100
200
160
120
80
Tj = 25°C
40
0
0
1
2
3
4
100
101
102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
103
102
101
Typical Example
V
= 10V
GM
P
= 5W
GM
101
P
=
0.5W
G(AV)
I
= 2A
GM
I
RGT III
V
GT
= 1.5V
100
I
I
FGT I, RGT I
10−1
I
V
= 0.1V
I , I
FGT I RGT III
RGT I
GD
101
102
103
104
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
103
104
103
102
101
4.0
Typical Example
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10−1
100
101
102
–40
0
40
80
120
160
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0959EJ0200 Rev.2.00
Mar 01, 2013
Page 3 of 7
BCR16FM-14LJ
Preliminary
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
40
103
102
No Fins
35
30
25
20
15
10
5
360° Conduction
Resistive,
inductive loads
101
100
10−1
0
101
102
103
104
105
0
4
8
12
16
20
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
120
100
80
160
140
120
100
80
Curves apply regardless
of conduction angle
All fins are black painted
aluminum and greased
120 120 t2.3
100 100 t2.3
60 60 t2.3
60
60
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
40
40
360° Conduction
20
20 Resistive,
inductive loads
0
0
0
4
8
12
16
20
0
4
8
12
16
20
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
106
160
140
120
100
80
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
105
104
103
102
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 3.0
RMS On-State Current (A)
–40
0
40
80
120
160
Junction Temperature (°C)
R07DS0959EJ0200 Rev.2.00
Mar 01, 2013
Page 4 of 7
BCR16FM-14LJ
Preliminary
Holding Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
103
103
102
101
100
Distribution
–
+
T
, G
Typical Example
2
102
+
–
+
–
T
T
, G
, G
2
Typical Example
40 80 120
Typical Example
2
101
–40
0
40
80
120
160
–40
0
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Junction Temperature
160
140
120
100
80
160
140
120
100
80
60
40
20
0
III Quadrant
I Quadrant
60
40
Typical Example
Tj = 125°C
20
Typical Example
0
–40
101
102
103
104
0
40
80
120
160
Rate of Rise of Off-State Voltage (V/μs)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
102
160
140
Typical Example
Tj = 125°C
I = 4A
T
τ = 500μs
III Quadrant
120
100
80
60
40
20
0
III Quadrant
V
= 200V
D
f = 3Hz
101
Minimum
Value
I Quadrant
Time
Main Voltage
Main Current
I Quadrant
(dv/dt)c
V
D
Typical Example
Tj = 150°C
(di/dt)c
Time
I
T
τ
100
100
101
102
101 102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0959EJ0200 Rev.2.00
Mar 01, 2013
Page 5 of 7
BCR16FM-14LJ
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
Commutation Characteristics (Tj=150°C)
102
101
100
103
102
101
Time
Typical Example
Tj = 150°C
Main Voltage
(dv/dt)c
Main Current
Typical Example
V
D
I
RGT III
I = 4A
T
τ = 500μs
(di/dt)c
Time
I
T
τ
I
RGT I
V
= 200V
D
f = 3Hz
I Quadrant
III Quadrant
I
FGT I
Minimum
Value
100
101
102
100
101
Gate Current Pulse Width (μs)
102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
A
A
6V
6V
330Ω
330Ω
V
V
Test Procedure I
Test Procedure II
6Ω
A
6V
330Ω
V
Test Procedure III
R07DS0959EJ0200 Rev.2.00
Mar 01, 2013
Page 6 of 7
BCR16FM-14LJ
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code
RENESAS Code
PRSS0003AG-A
Previous Code
MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
3.18 ± 0.10
1.28 ± 0.30
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
5.08 ± 0.20
Ordering Information
Orderable Part Number
BCR16FM-14LJ#BB0
Packing
Quantity
Remark
Tube
Tube
50 pcs. Straight type
50 pcs. A8 Lead Form
BCR16FM-14LJA8#BB0
Note: Please confirm the specification about the shipping in detail.
R07DS0959EJ0200 Rev.2.00
Mar 01, 2013
Page 7 of 7
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
Colophon 2.2
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