概述
数据手册BCR16FM12LB 概述
Triac
BCR16FM12LB 数据手册
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PDF下载Preliminary Datasheet
BCR16FM-12LB
R07DS1188EJ0100
Rev.1.00
600V - 16A - Triac
Mar 26, 2014
Medium Power Use
Features
•
•
•
•
IT (RMS) : 16A
DRM : 600 V
Tj: 150 °C
FGTI, IRGTI, IRGT III: 30 mA(20mA) Note5
•
•
•
Insulated Type
Planar Passivation Type
Viso:2000V
V
I
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T Terminal
1
2. T Terminal
2
3. Gate Terminal
3
1
1
2
3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
600
720
Repetitive peak off-state voltageNote1
VDRM
VDSM
V
V
Non-repetitive peak off-state voltageNote1
Parameter
Symbol
Ratings
Unit
A
Conditions
RMS on-state current
IT (RMS)
ITSM
I2t
16
Commercial frequency, sine full wave
360°conduction, Tc = 98°C
60Hz sinewave 1 full cycle, peak value,
Surge on-state current
I2t for fusion
160
A
non-repetitive
106.5
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
W
W
V
0.5
10
2
Peak gate current
A
Junction Temperature
Storage temperature
Mass
Isolation voltage Note6
Tj
–40 to +150
–40 to +150
1.9
°C
°C
g
Tstg
—
Typical value
Viso
2000
V
Ta=25°C, AC 1 minute
T1 • T2 • G terminal to case
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Page 1 of 7
BCR16FM-12LB
Preliminary
Electrical Characteristics
Rated value
Parameter
Symbol
Unit
Test conditions
Min.
—
Typ.
—
Max.
2.0
Repetitive peak off-state current
On-state voltage
IDRM
VTM
mA
V
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 25A,
—
—
1.5
instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
VRGT
Ι
VRGT
1.5
V
ΙΙΙ
Gate trigger curentNote2
IFGT
30 Note5
30 Note5
30 Note5
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
IRGT
Ι
IRGT
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
VGD
0.2
0.1
—
10
1
—
—
—
—
—
—
—
V
Tj = 125°C, VD = 1/2 VDRM
Tj = 150°C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125°C
Rth (j-c)
2.9
—
°C/W
V/μs
Critical-rate of rise of off-state
commutation voltageNote4
(dv/dt)c
—
Tj = 150°C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact themal resistance Rth (c-f) in case of greasing is 0.5°C /W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. High sensitivity (IGT ≤ 20mA) is also available.(IGT item:1)
6. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
(di/dt)c
Time
Supply Voltage
Tj = 125/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0A/ms
Main Current
Main Voltage
Time
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Page 2 of 7
BCR16FM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
7
5
200
180
160
140
120
100
80
3
2
102
7
5
Tj = 150°C
3
2
101
7
60
5
40
3
2
Tj = 25°C
20
100
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
100
2
3
4 5
7
101
2
3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
103
3
2
Typical Example
7
V
GM
= 10V
P
G(AV)
= 0.5W
5
4
P
= 5W
101
7
5
GM
3
2
I
RGT III
I
= 2A
GM
3
2
V
GT
= 1.5V
102
100
7
I , I
FGT I RGT I
7
5
5
4
3
2
3
2
I
, I
, I
FGT I RGT I RGT III
V
GD
= 0.2V
10–1
7
5
101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–60–40–20 0 20 40 60 80 100120140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102 2 3 5 7 103 2 3
5.0
103
Typical Example
7
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
5
4
3
2
102
7
5
4
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
–60–40–20 0 20 40 60 80 100120140
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Page 3 of 7
BCR16FM-12LB
Preliminary
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
103
7
5
40
No Fins
35
30
25
20
15
10
5
3
2
102
7
360° Conduction
Resistive,
inductive loads
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0
101 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
0
2
4
6
8 10 12 14 16 18 20
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
140
120
100
80
All fins are black painted
aluminum and greased
140
120
100
80
120 × 120 × t2.3
100 × 100 × t2.3
Curves apply regardless
of conduction angle
60 × 60 × t2.3
60
60
Curves apply
regardless of
40
40
conduction angle
Resistive,
inductive loads
Natural convection
360° Conduction
Resistive,
inductive loads
20
20
0
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8 10 12 14 16 18 20
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
140
120
100
80
5
3
2
105
7
5
3
2
104
7
5
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
3
2
60
103
7
5
40
3
2
20
0
102
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
–60–40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Page 4 of 7
BCR16FM-12LB
Preliminary
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
103
103
7
5
Typical Example
7
Distribution
5
4
–
+
3
2
T
, G
Typical Example
2
3
2
102
7
5
102
3
2
7
5
4
101
7
3
2
5
3
2
+
–
+
–
T
T
, G
, G
2
Typical Example
40 80
2
101
–60–40–20
100
–40
0 20 40 60 80 100120140160
0
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
80
160
Typical Example
Tj = 125°C
Typical Example
140
120
100
80
III Quadrant
60
60
40
40
I Quadrant
20
20
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–60–40–20
0 20 40 60 80 100120140160
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
102
Time
Typical Example
Tj = 125°C
I = 4A
Main Voltage
Typical Example
7
5
(dv/dt)c
V
D
Tj = 150°C
140
Main Current
T
(di/dt)c
I
T
τ = 500μs
= 200V
120
100
τ
3
2
Time
V
D
f = 3Hz
101
III Quadrant
80
Minimum
Characteristics
Value
7
5
III Quadrant
60
3
2
40
I Quadrant
I Quadrant
20
100
0
7
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
3
5
7 101
2
5 7 102
2 3
3
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Rise of Off-State Voltage (V/μs)
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Page 5 of 7
BCR16FM-12LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
Commutation Characteristics (Tj=150°C)
102
103
Time
Typical Example
Tj = 150°C
I = 4A
Main Voltage
Typical Example
7
5
7
(dv/dt)c
V
D
5
4
I
FGT I
Main Current
T
(di/dt)c
Time
I
T
τ = 500μs
= 200V
3
2
I
τ
RGT I
3
2
V
I
D
f = 3Hz
RGT III
101
102
7
5
I Quadrant
III Quadrant
7
5
4
3
2
3
2
Minimum
Characteristics
Value
100
7
101
100
2
3 4 5 7 101
2
3 4 5 7 102
3
5 7 101
2
5 7 102
2 3
3
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
Recommended Circuit Values Around The Triac
Load
C1
R1
A
A
6V
6V
C0 R0
330Ω
330Ω
V
V
C
R
= 0.1 to 0.47μF
= 47 to 100Ω
C
R
= 0.1μF
= 100Ω
1
1
0
0
Test Procedure I
6Ω
Test Procedure II
A
6V
330Ω
V
Test Procedure III
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Page 6 of 7
BCR16FM-12LB
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code
RENESAS Code
PRSS0003AG-A
Previous Code
MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
3.18 ± 0.10
1.28 ± 0.30
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
5.08 ± 0.20
Ordering Information
Orderable Part Number
BCR16FM-12LB#BB0
Packing
Quantity
Remark
Tube
Tube
Tube
Tube
50 pcs. Straight type
BCR16FM-12LB-1#BB0
BCR16FM-12LB#BB0
BCR16FM12LB1#BB0
50 pcs. Straight type, IGT item:1
50 pcs. :Lead forming type
50 pcs. : Lead forming type, IGT item:1
Note : Please confirm the specification about the shipping in detail.
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Page 7 of 7
Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
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Colophon 4.0
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