BB301CAW-UL [RENESAS]
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, CMPAK-4;
| 型号： | BB301CAW-UL |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, CMPAK-4 晶体 射频放大器 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 |
| 文件： | 总8页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BB301C
Built in Biasing Circuit MOS FET IC
VHF RF Amplifier
REJ03G0823-0300
(Previous ADE-208-507A)
Rev.3.00
Aug.10.2005
Features
•
•
Built in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics;
(NF = 1.3 dB typ. at f = 200 MHz)
•
•
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
1. Source
2. Gate1
3. Gate2
4. Drain
1
4
Notes : 1. Marking is “AW–”.
2. BB301C is individual tBBFET.
Rev.3.00 Aug 10, 2005 page 1 of 7
BB301C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
Ratings
Unit
6
V
V
VG1S
+6
–0
Gate2 to source voltage
Drain current
VG2S
ID
±6
25
V
mA
mW
°C
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
Tstg
100
150
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
6
Typ
—
Max
Unit
Test conditions
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
V(BR)DSS
V(BR)G1SS
V(BR)G2SS
IG1SS
—
—
ID = 200 µA, VG1S = VG2S = 0
IG1 = +10 µA, VG2S = VDS = 0
= ±10 µA, VG1S = VDS = 0
= +5 V, VG2S = VDS = 0
5 V, VG1S = VDS = 0
+6
±6
—
—
—
—
—
IG2SS
—
—
VG1S(off)
0.4
= 5 V, VG2S = 4 V
= 100 µA
Gate2 to source cutoff voltage
Drain current
VG2S(off)
ID(op)
0.4
VDS = 5 V, VG1S = 5 V
ID = 100 µA
mA
mS
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 100 kΩ
Forward transfer admittance
|y
VDS = 5 V, VG1 = 5 V, VG2S =4 V
RG = 100 kΩ, f = 1 kHz
VDS = 5 V, VG1 = 5 V
VG2S =4 V, RG = 100 kΩ
f = 1 MHz
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
.2
3.9
1.6
0.04
—
pF
pF
pF
dB
dB
0.018
26
—
VDS = 5 V, VG1 = 5 V, VG2S =4
VRG = 100 kΩ, f = 200 MHz
Noise figure
1.3
1.9
Rev.3.00 Aug 10, 2005 page 2 of 7
BB301C
Main Characteristics
Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 1
Gate 2
Drain
Source
A
ID
Equivalent Circuit
Gate 2
Gate 1
VDS = 5 V
RFC
FET
Output
In
RG
VGG = 5 V
Rev.3.00 Aug 10, 2005 page 3 of 7
BB301C
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
VG2S = 4 V
30
25
20
15
10
5
200
150
100
50
VG1 = VDS
0
0
50
100
150
200
1
2
3
4
5
5
5
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
nt vs. Gate1 Voltage
25
20
15
10
5
4
VG2S = 1 V
VD
0
0
1
2
3
4
1
2
Gate2 to So
Gate1 Voltage VG1 (V)
Drain Curege
VDS = 5 V
Drain Current vs. Gate1 Voltege
VDS = 5 V
20
16
12
8
20
16
12
8
R
G = 150 kΩ
R
G = 100 kΩ
3 V
4 V
2 V
VG2S = 1 V
4
4
VG2S = 1 V
0
0
1
2
3
4
5
1
2
3
4
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Rev.3.00 Aug 10, 2005 page 4 of 7
BB301C
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance
vs. Gate1 Voltage
30
25
20
15
10
5
30
25
20
15
10
5
VDS = 5 V
V DS = 5 V
R
G = 82 kΩ
RG = 100 kΩ
f = 1 kHz
f = 1 kHz
2 V
2 V
VG2S = 1 V
VG2S = 1 V
4
0
0
1
2
3
4
5
1
2
3
5
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
vs. Gate Resistance
20
16
12
8
VDS = 5 V
RG = 150 kΩ
f = 1 kHz
2 V
VDS = 5 V
4
V
G1 = 5 V
5
0
VG2S = 4 V
V
f = 200 MHz
0
10
20 50 100 200
500 1000
1
2
Gate1
Gate Resistance RG (kΩ)
Noise Figurce
VDS = 5 V
Power Gain vs. Drain Current
4
3
2
30
25
20
15
10
5
VG1 = 5 V
VG2S = 4 V
f = 200 MHz
VDS = 5 V
V
G1 = 5 V
1
0
V
G2S = 4 V
R
= variable
f = 200 MHz
0
10
20
50 100 200
500 1000
5
10
15
20
25
30
Gate Resistance RG (kΩ)
Drain Current ID (mA)
Rev.3.00 Aug 10, 2005 page 5 of 7
BB301C
Noise Figure vs. Drain Current
VDS = 5 V
Drain Current vs. Gate Resistance
4
3
2
1
30
25
20
15
10
V
G1 = 5 V
VG2S = 4 V
G = variable
f = 200 MHz
R
VDS = 5 V
5
0
V
G1 = 5 V
VG2S = 4 V
0
5
10
15
20
25
10
20
50 100 200
500 1000
30
Gate Resistance RG (kΩ)
Drain Current ID (mA)
Gain Reduction vs.
put Capacitance vs.
to Source Voltage
Gate2 to Source Voltage
VDS = 5 V
60
50
40
30
20
10
VG1 = 5 V
V
G2S = 4 V
RG = 100 kΩ
f = 200 MHz
VDS = 5 V
G1 = 5 V
G = 100 kΩ
V
R
f = 1 MHz
0
1
2
3
4
5
0
1
2
Gate2 to Sourc
Gate2 to Source Voltage VG2S (V)
Rev.3.00 Aug 10, 2005 page 6 of 7
BB301C
Package Dimensions
JEITA Package Code
SC-82A
RENESAS Code
PTSP0004ZA-A
Package Name
MASS[Typ.]
0.006g
CMPAK-4(T) / CMPAK-4(T)V
D
A
e2
B
e
Q
b1
c
B
E
HE
LP
Dimension in Millimeters
Reference
Symbol
Min
0.8
0
Nom
Max
1.1
0.1
1.0
L
A
A
1
A
2
A
3
A
A
L1
0.8
0.9
0.25
0.32
0.42
0.3
A3
b
b
0.25
0.35
0.4
0.5
x
S
A
M
e2
e
b
1
b
2
b
3
0.4
c
0.1
0.13
0.11
2.0
0.15
c
1
A2
A1
A
l1
D
E
e
1.8
2.2
1.15
1.25
0.65
1.35
e
0.6
2.1
2
b5
y
S
H
1.8
0.3
0.1
0.2
2.4
0.7
E
S
L
L
0.5
1
b
b1
b3
L
0.6
P
l
b
2
x
0.05
0.05
0.45
0.55
c1
c
1
y
b
4
5
1
c
c
b
e
on areas
1.5
0.2
l
0.9
1
A-A Section
B-B Section
Q
Ordering Information
Part Name
Shipping Container
mm Reel, 8 mm Emboss Taping
BB301CAW-TL-E
3000
Note: For some grades, produase contact the Renesas sales office to check the state of
production before ord
Rev.3.00 Aug 10, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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