BB301M [RENESAS]
Built in Biasing Circuit MOS FET IC VHF RF Amplifier; 内置偏置电路MOS FET的IC甚高频射频放大器
| 型号： | BB301M |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Built in Biasing Circuit MOS FET IC VHF RF Amplifier |
| 文件： | 总8页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BB301M
Built in Biasing Circuit MOS FET IC
VHF RF Amplifier
REJ03G0824-0300
(Previous ADE-208-506A)
Rev.3.00
Aug.10.2005
Features
•
•
Built in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics;
(NF = 1.3 dB typ. at f = 200 MHz)
•
•
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143Rmod)
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
1. Source
2. Gate1
3. Gate2
4. Drain
3
1
4
Notes:
1. Marking is “AW–”.
2. BB301M is individual type number of RENESAS BBFET.
Rev.3.00 Aug 10, 2005 page 1 of 7
BB301M
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
Ratings
Unit
6
V
V
VG1S
+6
–0
±6
Gate2 to source voltage
Drain current
VG2S
ID
V
mA
mW
°C
25
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
Tstg
150
150
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
6
Typ
—
Max
Unit
V
Test conditions
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
V(BR)DSS
V(BR)G1SS
V(BR)G2SS
IG1SS
—
—
ID = 200 µA, VG1S = VG2S = 0
IG1 = +10 µA, VG2S = VDS = 0
IG2 = ±10 µA, VG1S = VDS = 0
VG1S = +5 V, VG2S = VDS = 0
VG2S = ±5 V, VG1S = VDS = 0
+6
±6
—
—
V
—
—
V
—
+100
±100
1.0
nA
nA
V
IG2SS
—
—
VG1S(off)
0.4
—
VDS = 5 V, VG2S = 4 V
ID = 100 µA
Gate2 to source cutoff voltage
Drain current
VG2S(off)
ID(op)
0.4
10
15
—
15
20
1.0
20
—
V
VDS = 5 V, VG1S = 5 V
ID = 100 µA
mA
mS
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 100 kΩ
Forward transfer admittance
|yfs|
VDS = 5 V, VG1 = 5 V, VG2S =4 V
RG = 100 kΩ, f = 1 kHz
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Ciss
Coss
Crss
PG
2.2
0.9
—
3.0
1.2
3.9
1.6
0.04
—
pF
pF
pF
dB
dB
VDS = 5 V, VG1 = 5 V
VG2S =4 V, RG = 100 kΩ
f = 1 MHz
0.018
26
22
—
VDS = 5 V, VG1 = 5 V, VG2S =4 V
RG = 100 kΩ, f = 200 MHz
Noise figure
NF
1.3
1.9
Rev.3.00 Aug 10, 2005 page 2 of 7
BB301M
Main Characteristics
Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 1
Gate 2
Drain
Source
A
ID
Equivalent Circuit
Gate 2
Drain
Source
Gate 1
Application Circuit
AGC = 4 to 0.3 V
VDS = 5 V
V
RFC
BBFET
Output
Input
RG
VGG = 5 V
Rev.3.00 Aug 10, 2005 page 3 of 7
BB301M
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
VG2S = 4 V
30
25
20
15
10
5
200
150
100
50
VG1 = VDS
0
0
50
100
150
200
1
2
3
4
5
Ambient Temperature Ta (°C)
Drain to Source Voltage VDS (V)
Drain Current vs.
Gate2 to Source Voltage
Drain Current vs. Gate1 Voltage
VDS = 5 V
20
16
12
8
25
20
15
10
5
R
G = 82 kΩ
4
VG2S = 1 V
VDS = VG1 = 5 V
0
0
1
2
3
4
5
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
Gate1 Voltage VG1 (V)
Drain Current vs. Gate1 Voltege
VDS = 5 V
Drain Current vs. Gate1 Voltege
VDS = 5 V
20
16
12
8
20
16
12
8
RG = 100 kΩ
R
G = 150 kΩ
3 V
4 V
2 V
VG2S = 1 V
4
4
VG2S = 1 V
0
0
1
2
3
4
5
1
2
3
4
5
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Rev.3.00 Aug 10, 2005 page 4 of 7
BB301M
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance
vs. Gate1 Voltage
30
25
20
15
10
5
30
25
20
15
10
5
VDS = 5 V
VDS = 5 V
RG = 82 kΩ
R
G = 100 kΩ
f = 1 kHz
f = 1 kHz
2 V
2 V
VG2S = 1 V
4
VG2S = 1 V
4
0
0
1
2
3
5
1
2
3
5
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
Power Gain vs. Gate Resistance
30
25
20
15
10
20
16
12
8
VDS = 5 V
RG = 150 kΩ
f = 1 kHz
2 V
VDS = 5 V
4
V
V
G1 = 5 V
G2S = 4 V
5
0
VG2S = 1 V
4 5
f = 200 MHz
0
10
20 50 100 200
500 1000
1
2
3
Gate1 Voltage VG1 (V)
Gate Resistance RG (kΩ)
Noise Figure vs. Gate Resistance
VDS = 5 V
Power Gain vs. Drain Current
4
3
2
30
25
20
15
10
5
VG1= 5 V
VG2S = 4 V
f = 200 MHz
VDS = 5 V
V
V
G1 = 5 V
G2S = 4 V
1
0
RG = variable
f = 200 MHz
0
10
20
50 100 200
500 1000
5
10
15
20
25
30
Gate Resistance RG (kΩ)
Drain Current ID (mA)
Rev.3.00 Aug 10, 2005 page 5 of 7
BB301M
Drain Current vs. Gate Resistance
Noise Figure vs. Drain Current
VDS = 5 V
4
3
2
1
30
25
20
15
10
V
V
G1 = 5 V
G2S = 4 V
RG = variable
f = 200 MHz
VDS = 5 V
V
V
G1 = 5 V
G2S = 4 V
5
0
0
5
10
15
20
25
10
20
50 100 200
500 1000
30
Drain Current ID (mA)
Gate Resistance RG (kΩ)
Input Capacitance vs.
Gate2 to Source Voltage
Gain Reduction vs.
Gate2 to Source Voltage
VDS = 5 V
60
50
40
30
20
10
4
3
2
1
V
V
G1 = 5 V
G2S = 4 V
R
G = 100 kΩ
f = 200 MHz
VDS = 5 V
G1 = 5 V
V
RG = 100 kΩ
f = 1 MHz
0
0
1
2
3
4
1
2
3
4
5
5
Gate2 to Source Voltage VG2S (V)
Gate2 to Source Voltage VG2S (V)
Rev.3.00 Aug 10, 2005 page 6 of 7
BB301M
Package Dimensions
JEITA Package Code
SC-61AA
RENESAS Code
PLSP0004ZA-A
Package Name
MASS[Typ.]
0.013g
MPAK-4 / MPAK-4V
D
A
e
2
e
b
1
Q
c
B
B
E
HE
Dimension in Millimeters
Reference
Symbol
Min
1.0
0
Nom
Max
1.3
0.1
1.2
A
A
A
A
1
2
3
L
L
P
L
1
1.0
1.1
0.25
0.42
0.62
0.4
A
A
A
3
b
0.35
0.55
0.5
0.7
b
b
1
2
3
x
S
A
M
e
2
e
b
b
0.6
c
0.1
0.13
0.11
0.15
c
1
I1
A
A
2
1
D
E
e
2.7
3.1
A
1.35
1.5
0.95
0.85
2.8
1.65
b
5
e
2
H
E
2.2
3.0
e
1
y
S
L
0.35
0.15
0.25
0.75
0.55
0.65
0.05
0.05
0.55
0.75
S
L
1
b
b1
b3
L
P
b
2
x
c1
c
1
I1
y
b
4
5
1
c
c
b
e
b
4
1.95
0.3
I1
1.05
A-A Section
B-B Section
Pattern of terminal position areas
Q
Ordering Information
Part Name
Quantity
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
BB301MAW-TL-E
3000
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Aug 10, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
相关型号：
BB301MAW-UL
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-4
HITACHI
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