2SK3719BJ-A [RENESAS]
TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,320UA I(DSS),SOT-416VAR;
| 型号： | 2SK3719BJ-A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,320UA I(DSS),SOT-416VAR |
| 文件： | 总5页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3719
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK3719 is suitable for converter of ECM.
+0.1
0.3 0.0ꢀ
0.13
–0.0ꢀ
FEATURES
• High gain
0 to 0.0ꢀ
3
−0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
• Low noise
2
1
−109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
• Super thin thickness package
t = 0.37 mm TYP.
0.4ꢀ
0.4ꢀ
1.4 0.1
MAX. 0.4
ORDERING INFORMATION
PART NUMBER
2SK3719
PACKAGE
+0.1
–0
0.2
3pXSOF (0814)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
EQUIVALENT CIRCUIT
Drain to Source Voltage (VGS = −1.0 V)
Gate to Drain Voltage
Drain Current
VDSX
VGDO
ID
20
V
V
2
−20
10
10
mA
mA
mW
°C
3
Gate Current
IG
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
100
1
Tj
125
1: Source
2: Drain
3: Gate
−55 to +125
Tstg
°C
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16787EJ2V0DS00 (2nd edition)
The mark shows major revised points.
Date Published April 2004 NS CP(K)
Printed in Japan
2003
2SK3719
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
SYMBOL
TEST CONDITIONS
MIN.
90
TYP.
MAX.
UNIT
µA
V
IDSS
VDS = 2.0 V, VGS = 0 V
250
−0.37
470
430
VDS = 2.0 V, ID = 1.0 µA
−1.0
VGS(off)
| yfs1 |
| yfs2 |
Ciss
VDS = 2.0 V, ID = 30 µA, f = 1.0 kHz
VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz
VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz
VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ,
VIN = 10 mV, f = 1 kHz
µS
µS
pF
Forward Transfer Admittance
320
800
1600
4.0
Input Capacitance
Voltage Gain
−0.5
GV
dB
VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ,
A-curve
−109
Noise Voltage
NV
dB
IDSS CLASSIFICATION
MARKING
BE
BF
150 to 240
BH
BJ
320 to 430
IDSS (µA)
90 to 180
210 to 350
GAIN TEST CIRCUIT
VDD
R
L
Out
C
NOISE VOLTAGE TEST CIRCUIT
VDD
RL
JIS A
NV (r.m.s)
C
2
Data Sheet D16787EJ2V0DS
2SK3719
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF POWER DISSIPATION
120
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
800
600
400
200
0
VGS = 0.2 V
100
80
60
40
20
0
µ
0.1 V
0 V
−0.1 V
−0.2 V
−0.3 V
0
25
50
75
100
125
150
175
0
2
4
6
8
10
TA - Ambient Temperature - °C
VDS - Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1600
1400
1200
1000
800
600
400
200
0
VDS = 2.0 V
40
30
µ
µ
20
10
−0.8 −0.6 −0.4 −0.2
0
0.2 0.4 0.6 0.8
−10
−20
−30
−40
-0.8 -0.6 -0.4 -0.2
0
0.2 0.4 0.6 0.8
1
VGS - Gate to Source Voltage - V
VGS - Gate to Source Voltage - V
INPUT CAPACITANCE vs.
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
DRAIN TO SOURCE VOLTAGE
10
10
GS
V
= 0 V
VDS = 2.0 V
f = 1.0 MHz
| yfs |
1
VGS(off)
0.1
1
10
100
1000
1
10
VDS - Drain to Source Voltage - V
100
IDSS - Zero Gate Voltage Drain Current - µA
3
Data Sheet D16787EJ2V0DS
2SK3719
VOLTAGE GAIN vs. DRAIN CURRENT
NOISE VOLTAGE vs. DRAIN CURRENT
IDSS - Drain Current - µA
IDSS - Drain Current - µA
4
Data Sheet D16787EJ2V0DS
2SK3719
•
The information in this document is current as of April, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
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Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
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The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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defined above).
M8E 02. 11-1
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