2SK3720-5 [ONSEMI]
Small Signal Field-Effect Transistor, 0.03A I(D), 15V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CP, 3 PIN;
| 型号： | 2SK3720-5 |
| 厂家： | 
ONSEMI |
| 描述： | Small Signal Field-Effect Transistor, 0.03A I(D), 15V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CP, 3 PIN |
| 文件： | 总4页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN8173A
N-Channel Silicon MOSFET
FM Tuner, VHF-Band Amplifier
Applications
2SK3720
Features
• Low noise.
•
High power gain.
•
Small reverse transfer capacitance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
15
±5
DS
GS
Gate-to-Source Voltage
Drain Current
V
V
I
30
mA
mW
°C
D
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
200
150
D
Tch
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=--4V, I =100µA
Unit
min
max
Drain-to-Source Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
V
V
V
V
V
V
V
V
V
15
V
nA
mA
V
DSX
GS
DS
DS
DS
DS
DS
DS
DS
D
I
=0V, V =±5V
GS
±10
12*
GSS
I
=10V, V =0V
GS
6.0*
11
DSS
V (off)
GS
yfs
=10V, I =100µA
--2.2
D
Forward Transfer Admittance
Input Capacitance
=10V, V =0V, f=1kHz
GS
16
mS
pF
pF
Ciss
Crss
=10V, V =0V, f=1MHz
GS
2.4
Reverse Transfer Capacitance
=10V, V =0V, f=1MHz
GS
0.035
=10V, V =0V, f=100MHz
GS
Power Gain
PG
NF
35
dB
dB
See specified Test Circuit.
V
DS
=10V, V =0V, f=100MHz
GS
Noise Figure
2.0
See specified Test Circuit.
Marking : KA
* : The 2SK3720 is classified by I
as follows (unit : mA).
DSS
Rank
5
6
I
6 to 10
8 to 12
DSS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005AD MS IM / 31005AD TS IM TA-3941 No.8173-1/4
2SK3720
Package Dimensions
unit : mm
PG, NF Specified Test Circuit
7013-012
L2
L1
to 30pF
to 30pF
OUT
IN
0.4
3
0.16
0 to 0.1
1
2
V
V
D
G
0.95 0.95
L1 : 1.0mmφ copper wire 10mmφ 6T, tap : 2.5T from H side
L2 : 1.0mmφ copper wire 10mmφ 7T, tap : 4T from H side
1.9
2.9
1 : Drain
2 : Gate
3 : Source
SANYO : CP
I
-- V
I
-- V
GS
D
DS
D
28
24
20
16
12
8
28
24
20
16
12
8
V
=10V
DS
0V
--0.2V
--0.4V
--0.8V
4
0
4
0
=
V
GS
0
2
4
6
8
10
12
--1.5
--1.0
--0.5
0
0.5
1.0
1.5
IT08946
Drain-to-Source Voltage, V
DS
-- V
IT08945
Gate-to-Source Voltage, V
-- V
GS
y
fs -- I
yfs -- V
D
GS
20
16
12
8
3
2
V
=10V
V
=10V
DS
DS
10
7
5
4
0
3
2
5
7
2
3
5
7
2
--1.5
--1.0
--0.5
0
0.5
1.0
1.5
IT08947
1.0
10
Gate-to-Source Voltage, V
GS
-- V
Drain Current, I -- mA
IT08679
D
No.8173-2/4
2SK3720
yfs -- V
V
(off) -- I
DS
GS
DSS
3
2
18
16
14
12
10
8
V =10V
DS
V =0V
GS
--1.0
7
5
3
2
6
0
--0.1
3
5
7
2
0
3
0
2
4
6
8
10
12
IT08681
10
IT08680
Drain-to-Source Voltage, V
DS
-- V
Drain Current, I
Ciss, Crss -- V
-- mA
DSS
y
fs -- I
DS
DSS
10
20
18
16
14
12
f=1MHz
V
V
=10V
=0V
DS
GS
V
=0V
GS
5
3
2
Ciss
1.0
5
3
2
0.1
10
8
5
Crss
3
2
5
7
2
0
4
8
12
16
20
24
ITR00807
10
-- mA
Drain-to-Source Voltage, V
-- V
Drain Current, I
DSS
IT08682
DS
PG, NF -- I
P
-- Ta
D
D
40
36
32
28
24
20
4
240
200
160
120
80
V
=10V
f=100MHz
DS
40
0
2
0
3
5
7
2
3
5
7
2
20
40
60
80
100
120
140
160
1.0
10
Drain Current, I -- mA
IT08683
Ambient Temperature, Ta -- °C
IT08977
D
No.8173-3/4
2SK3720
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
PS No.8173-4/4
相关型号：
2SK3724
Power Field-Effect Transistor, 80A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
SANKEN
©2020 ICPDF网 联系我们和版权申明