2SK3378ENTR-E [RENESAS]
Silicon N Channel MOS FET High Speed Switching; 硅N沟道MOS场效应管高速开关
| 型号： | 2SK3378ENTR-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Switching |
| 文件： | 总7页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3378
Silicon N Channel MOS FET
High Speed Switching
REJ03G1599-0200
(Previous: ADE-208-805)
Rev.2.00
Oct 23, 2007
Features
•
Low on-resistance
RDS = 2.7 Ω typ. (VGS = 10 V, ID = 50 mA)
R
DS = 4.7 Ω typ. (VGS = 4 V, ID = 20 mA)
•
•
4 V gate drive device.
Small package (CMPAK)
Outline
RENESAS Package code: PTSP0003ZA-A
(Package name: CMPAK R
)
D
3
1. Source
2. Gate
3. Drain
1
G
2
S
Note: Marking is EN
*CMPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Rating
(Ta = 25°C)
Unit
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
30
V
±20
V
100
mA
mA
mA
mW
°C
Note1
Drain peak current
ID(pulse)
400
Body-drain diode reverse drain current
Channel dissipation
IDR
100
Pch Note 2
Tch
300
Channel temperature
150
Storage temperature
Tstg
–55 to +150
°C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 1 of 6
2SK3378
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
V(BR)GSS
IGSS
Min
30
±20
—
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
ID = 100 µA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
ID = 10 µA, VDS = 5 V
ID = 50 mA, VGS = 10 V Note 3
ID = 20 mA, VGS = 4 V Note 3
ID = 50 mA, VDS =10 V Note 3
VDS = 10 V
—
—
V
—
±5
1
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
1.3
—
—
2.3
3.5
7.0
—
Static drain to source on state
resistance
2.7
4.7
85
Ω
—
Ω
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
55
—
mS
pF
pF
pF
ns
ns
ns
ns
Ciss
3
—
VGS = 0
Coss
Crss
td(on)
—
8
—
f = 1 MHz
—
1
—
—
100
330
1150
940
—
ID = 50 mA, VGS = 10 V
RL = 200 Ω
tr
—
—
Turn-off delay time
Fall time
td(off)
—
—
tf
—
—
Notes: 3. Pulse test
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 2 of 6
2SK3378
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
5
400
300
200
100
2
1.0
0.5
10 µs
100 µs
1 ms
0.2
0.1
PW = 10 ms
(1 shot)
0.05
0.02
0.01
Operation in
this area is limited
by RDS(on)
0.005
0.002
0.001
Ta = 25°C
0.0005
0
0.05 0.1 0.2 0.5
1
2
5
10
20
50
100
150
200
50
Ambient Temperature Ta (°C)
*Value on the alumina ceramic boad.(12.5x20x0.7mm)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
500
400
300
200
100
8 V
7 V
6 V
75°C
Pulse Test
5 V
25°C
Tc =
–
25°C
4 V
VGS = 3V
8
VDS = 10 V
Pulse Test
0
0
2
4
6
8
10
2
4
6
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
50
2.0
1.6
1.2
0.8
0.4
Pulse Test
ID = 100mA
Pulse Test
20
10
5
VGS = 4V
10 V
2
1.0
0.5
50 mA
10 mA
6
Gate to Source Voltage VGS (V)
0
2
4
8
10
0.1
0.2
0.5
1.0
Drain Current ID (A)
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 3 of 6
2SK3378
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
10
8
0.5
ID = 100 m A
VDS = 10 V
Pulse Test
Tc = –25°C
50 mA
0.2
0.1
VGS = 4 V
25°C
6
75°C
10 mA
0.05
4
0.02
2
10 mA,50 mA,100 m A
10 V
0.01
Pulse Test
0
0.005
0.01
0.02
0.05
0.1
–40
0
40
80
120
160
Case Temperature TC (°C)
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Switching Characteristics
10000
5000
10
5
Coss
Ciss
2000
1000
t
d(off)
2
t
f
500
200
1.0
Crss
t
r
t
d(on)
0.5
100
50
0.2
0.1
VGS = 0
VGS = 10 V, VDD = 10 V
20
10
f = 1 MHz
PW = 5 µs, duty ≤ 1 %
0
10
20
30
40 50
0.01
0.02
0.05
0.1
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
0.5
0.4
0.3
0.2
0.1
VGS = 0, –5V
10 V
5 V
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 4 of 6
2SK3378
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
10%
10%
Vin
RL
Vout
10%
VDD
= 10 V
Vin
10 V
50 Ω
90%
90%
t
t
d(on)
t
f
t
r
d(off)
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 5 of 6
2SK3378
Package Dimensions
Package Name
CMPAK
JEITA Package Code
SC-70
RENESAS Code
PTSP0003ZA-A
Previous Code
MASS[Typ.]
0.006g
CMPAK / CMPAKV
D
A
e
Q
c
E
HE
LP
L
A
A
L1
A3
b
x
S
A
M
e
Reference
Symbol
Dimension in Millimeters
Min
0.8
0
Nom Max
A
A1
A2
A3
b
c
D
E
1.1
0.1
A2
A1
0.8
0.9
0.25
0.3
0.16
2.0
1.0
A
0.25
0.1
1.8
0.4
0.26
2.2
S
1.15 1.25
0.65
1.35
e1
e
b
HE
L
L1
LP
x
1.8
0.3
0.1
0.2
2.1
2.4
0.7
0.5
0.6
0.05
0.45
l1
c
b2
e1
b2
Pattern of terminal position areas
1.5
0.2
l1
Q
0.9
A-A Section
Ordering Information
Part No.
Quantity
Shipping Container
2SK3378ENTL-E
2SK3378ENTR-E
3000 pcs
3000 pcs
Taping
Taping
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
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Colophon .7.0
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