2SK3380 [HITACHI]
Silicon N Channel MOS FET High Speed Switching; 硅N沟道MOS场效应管高速开关型号: | 2SK3380 |
厂家: | HITACHI SEMICONDUCTOR |
描述: | Silicon N Channel MOS FET High Speed Switching |
文件: | 总5页 (文件大小:29K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK3380
Silicon N Channel MOS FET
High Speed Switching
ADE-208-806 (Z)
1st.Edition.
June 1999
Features
•
Low on-resistance
RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA)
RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
•
4 V gate drive device.
Outline
SPAK
D
1
2
3
G
1. Source
2. Drain
3. Gate
S
2SK3380
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
30
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID
±20
V
300
mA
A
Note1
Drain peak current
ID(pulse)
1.2
Body-drain diode reverse drain current IDR
300
mA
mW
°C
°C
Channel dissipation
Pch
300
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
ID = 100 µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
IDSS
—
—
—
—
±5
µA
µA
VGS = ±16 V, VDS = 0
Zero gate voltege drain
current
1
VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
1.3
—
—
145
—
—
—
—
—
—
—
—
2.3
1.44
3.44
—
V
ID = 10µA, VDS = 5 V
ID = 150 mA,VGS = 10 V Note 2
ID = 50 mA,VGS = 4 V Note 2
ID = 150 mA, VDS =10 V Note 2
VDS = 10 V
1.26
2.8
220
6
Ω
resistance
RDS(on)
Ω
Forward transfer admittance |yfs|
mS
pF
pF
pF
ns
ns
ns
ns
Input capacitance
Output capacitance
Ciss
—
Coss
18
—
VGS = 0
Reverse transfer capacitance Crss
2
—
f = 1 MHz
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
200
600
1100
1100
—
ID = 150 mA, VGS = 10 V
RL = 66.6 Ω
—
Turn-off delay time
Fall time
—
—
Note: 2. Pulse test
See characteristics curves of 2SK3288
2
2SK3380
Main Characteristics
Maximum Safe Operation Area
10 µs
Power vs. Temperature Derating
5
400
300
200
100
2
1.0
100 µs
1ms
0.5
0.2
0.1
0.05
0.02
0.01
Operation in this area
is limited by RDS(on)
0.005
0.002
0.001
Ta=25 °C
0.0005
0
0.05 0.1
1.0
10 20 50
(V)
0.2 0.5
5
2
50
100
150
200
Drain to Source Voltage
V
Ambient Temperature Ta ( °C)
DS
3
2SK3380
Package Dimensions
Unit: mm
2.2 Max
4.2 Max
0.6 Max
0.45 ± 0.1
0.4 ± 0.1
Hitachi Code
EIAJ
SPAK
–
1.27 1.27
2.54
–
JEDEC
4
2SK3380
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
5
相关型号:
2SK3385-AZ
Small Signal Field-Effect Transistor, 30A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251, MP-3, 3 PIN
NEC
2SK3385-Z-AZ
Small Signal Field-Effect Transistor, 30A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, TO-252, MP-3Z, 3 PIN
NEC
©2020 ICPDF网 联系我们和版权申明